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Электронный компонент: K4E660811D

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CMOS DRAM
K4E660811D,K4E640811D
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60), package type (SOJ or TSOP-
II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 8Mx8 EDO Mode DRAM family is fabricated using Samsung
s advanced CMOS process to realize high band-width, low power con-
sumption and high reliability.
Extended Data Out Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V
10% power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Memory Array
8,388,608 x 8
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
K4E660811D*
8K
64ms
K4E640811D
4K
Unit : mW
S
e
n
s
e

A
m
p
s

&

I
/
O
DQ0
to
DQ7
Data out
Buffer
Data in
Buffer
Performance Range
Speed
t
RAC
t
CAC
t
RC
t
HPC
-50
50ns
13ns
84ns
20ns
-60
60ns
15ns
104ns
25ns
Active Power Dissipation
Speed
8K
4K
-50
495
660
-60
440
605
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
Part Identification
 - K4E660811D-JC(5.0V, 8K Ref., SOJ)
- K4E640811D-JC(5.0V, 4K Ref., SOJ)
- K4E660811D-TC(5.0V, 8K Ref., TSOP)
- K4E640811D-TC(5.0V, 4K Ref., TSOP)
FEATURES
CMOS DRAM
K4E660811D,K4E640811D
V
CC
DQ0
DQ1
DQ2
DQ3
N.C
V
CC
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
V
SS
DQ7
DQ6
DQ5
DQ4
V
SS
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
PIN CONFIGURATION (Top Views)
* (N.C) : N.C for 4K Refresh product
Pin Name
Pin Function
A0 - A12
Address Inputs(8K Product)
A0 - A11
Address Inputs(4K Product)
DQ0 - 7
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5.0V)
N.C
No Connection
V
CC
DQ0
DQ1
DQ2
DQ3
N.C
V
CC
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
V
SS
DQ7
DQ6
DQ5
DQ4
V
SS
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(T : 400mil TSOP(II))
(J : 400mil SOJ)
K4E660811D-J
 K4E640811D-J
K4E660811D-T
 K4E640811D-T
CMOS DRAM
K4E660811D,K4E640811D
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
C)
*1 : V
CC
+2.0V at pulse width
20ns which is measured at V
CC
*2 : -2.0 at pulse width
20ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.6
-
V
CC
+1.0
*1
V
Input Low Voltage
V
IL
-1.0
*2
-
0.7
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
V
IN
V
CC
+0.5V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
V
OUT
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
CMOS DRAM
K4E660811D,K4E640811D
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
K4E660811D
K4E640811D
I
CC1
Don't care
-50
-60
90
80
120
110
mA
mA
I
CC2
Normal
Don't care
2
2
mA
I
CC3
Don't care
-50
-60
90
80
120
110
mA
mA
I
CC4
Don't care
-50
-60
100
90
110
100
mA
mA
I
CC5
Normal
Don't care
1
1
mA
I
CC6
Don't care
-50
-60
120
110
120
110
mA
mA
CMOS DRAM
K4E660811D,K4E640811D
CAPACITANCE
(T
A
=25
C, V
CC
=5.0V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ7]
C
DQ
-
7
pF
Test condition : V
CC
=5.0V
10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Random read or write cycle time
t
RC
84
104
ns
Read-modify-write cycle time
t
RWC
113
138
ns
Access time from RAS
t
RAC
50
60
ns
3,4,10
Access time from CAS
t
CAC
13
15
ns
3,4,5
Access time from column address
t
AA
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
3
3
ns
3
Output buffer turn-off delay from CAS
t
CEZ
3
13
3
13
ns
6,14
OE to output in Low-Z
t
OLZ
3
3
ns
3
Transition time (rise and fall)
t
T
1
50
1
50
ns
2
RAS precharge time
t
RP
30
40
ns
RAS pulse width
t
RAS
50
10K
60
10K
ns
RAS hold time
t
RSH
8
10
ns
CAS hold time
t
CSH
38
45
ns
CAS pulse width
t
CAS
8
10K
10
10K
ns
RAS to CAS delay time
t
RCD
20
37
20
45
ns
4
RAS to column address delay time
t
RAD
9
25
12
30
ns
10
CAS to RAS precharge time
t
CRP
5
5
ns
Row address set-up time
t
ASR
0
0
ns
Row address hold time
t
RAH
7
10
ns
Column address set-up time
t
ASC
0
0
ns
Column address hold time
t
CAH
7
10
ns
Column address to RAS lead time
t
RAL
25
30
ns
Read command set-up time
t
RCS
0
0
ns
8
Read command hold time referenced to CAS
t
RCH
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
0
0
ns
Write command hold time
t
WCH
7
10
ns
Write command pulse width
t
WP
7
10
ns
Write command to RAS lead time
t
RWL
8
10
ns
Write command to CAS lead time
t
CWL
7
10
ns
Data set-up time
t
DS
0
0
ns
9
AC CHARACTERISTICS
(0
C
T
A
70
C, See note 1,2)