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Электронный компонент: K4H510838C-ZCB3

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Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
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512Mb C-die DDR SDRAM Specification
60 FBGA with Pb-Free
(RoHS compliant)
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Table of Contents
1.0 Key Features ...............................................................................................................................4
2.0 Ordering Information...................................................................................................................4
3.0 Operating Frequencies................................................................................................................4
4.0 Pin Description ...........................................................................................................................5
5.0 Package Physical Dimension ....................................................................................................6
6.0 Block Diagram (32Mbit x4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks).............................................7
7.0 Input/Output Function Description ............................................................................................8
8.0 Command Truth Table.................................................................................................................9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions ........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11
13.0 Input/Output Capacitance ......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ..............................................................................17
21.0 Component Notes ....................................................................................................................18
22.0 System Notes ..........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Revision History
Revision
Month
Year
History
0.0
October
2004
- First version for internal review
1.0
February
2005
- Release the Rev. 1.0 spec
1.1
June
2005
- Changed master format.
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
VDD : 2.5V 0.2V, VDDQ : 2.5V 0.2V for DDR333
VDD : 2.6V 0.1V, VDDQ : 2.6V 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)
DM for write masking only (x4, x8)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
60Ball FBGA
Pb-Free
package
RoHS compliant
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Speed @CL2
-
133MHz
Speed @CL2.5
166MHz
166MHz
Speed @CL3
200MHz
-
CL-tRCD-tRP
3-3-3
2.5-3-3
Part No.
Org.
Max Freq.
Interface
Package
K4H510438C-ZC/LCC
128M x 4
CC(DDR400@CL=3)
SSTL2
60ball FBGA
K4H510438C-ZC/LB3
B3(DDR333@CL=2.5)
K4H510838C-ZC/LCC
64M x 8
CC(DDR400@CL=3)
SSTL2
60ball FBGA
K4H510838C-ZC/LB3
B3(DDR333@CL=2.5)
K4H511638C-ZC/LCC
32M x 16
CC(DDR400@CL=3)
SSTL2
60ball FBGA
K4H511638C-ZC/LB3
B3(DDR333@CL=2.5)
1.0 Key Features
2.0 Ordering Information
3.0 Operating Frequencies
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Organization
Row Address
Column Address
128Mx4
A0~A12
A0-A9, A11, A12
64Mx8
A0~A12
A0-A9, A11
32Mx16
A0~A12
A0-A9
4.0 Ball Description
(
Bottom View
)
1
VSSQ
NC
NC
NC
NC
VREF
2
NC
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CK
A12
A11
A8
A6
A4
3
VSS
DQ3
NC
DQ2
DQS
DM
CK
CKE
A9
A7
A5
VSS
A
B
C
D
E
F
G
H
J
K
L
M
7
VDD
DQ0
NC
DQ1
NC
NC
WE
RAS
BA1
A0
A2
VDD
8
NC
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
9
VDDQ
NC
NC
NC
NC
NC
1
VSSQ
NC
NC
NC
NC
VREF
2
DQ7
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CK
A12
A11
A8
A6
A4
3
VSS
DQ6
DQ5
DQ4
DQS
DM
CK
CKE
A9
A7
A5
VSS
A
B
C
D
E
F
G
H
J
K
L
M
7
VDD
DQ1
DQ2
DQ3
NC
NC
WE
RAS
BA1
A0
A2
VDD
8
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
9
VDDQ
NC
NC
NC
NC
NC
1
VSSQ
DQ14
DQ12
DQ10
DQ8
VREF
2
DQ15
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CK
A12
A11
A8
A6
A4
3
VSS
DQ13
DQ11
DQ9
UDQS
UDM
CK
CKE
A9
A7
A5
VSS
A
B
C
D
E
F
G
H
J
K
L
M
7
VDD
DQ2
DQ4
DQ6
LDQS
LDM
WE
RAS
BA1
A0
A2
VDD
8
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
9
VDDQ
DQ1
DQ3
DQ5
DQ7
NC
32M x 16
64M x 8
128M x 4