K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
FEATURES
GENERAL DESCRIPTION
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Address configuration
Organization
Bank
Row
Column Address
32M x 16
BA0, BA1
A0 - A12
A0 - A9
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
-. DPD (Deep Power Down Mode)
DQM for masking.
Auto refresh.
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25
C ~ 70
C).
Extended Temperature Operation (-25
C ~ 85
C).
54Balls FBGA (-RXXX : Pb, -BXXX : Pb Free).
The K4M51163PC is 536,870,912 bits synchronous high data
rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,
fabricated with SAMSUNG's high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
- R(B)E/G : Normal/Low Power, Extended Temperature(-25
C ~ 85
C)
- R(B)C/F : Normal/Low Power, Commercial Temperature(-25
C ~ 70
C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
Part No.
Max Freq.
Interface
Package
K4M51163PC-R(B)E/G/C/F75
133MHz(CL=3), 83MHz(CL=2)
LVCMOS
54 FBGA Pb
(Pb Free)
K4M51163PC-R(B)E/G/C/F90
111MHz(CL=3), 83MHz(CL=2)
K4M51163PC-R(B)E/G/C/F1L
111MHz(CL=3)*
1
, 66MHz(CL=2)
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
Bank Select
Data Input Register
8M x 16
8M x 16
Se
n
s
e
A
M
P
Outp
ut Buf
f
e
r
I/O Contro
l
Column Decoder
Latency & Burst Length
Programming Register
Address Registe
r
Row Buf
f
er
Refr
esh C
ounter
R
o
w Decoder
C
o
l. Buf
f
er
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
8M x 16
8M x 16
Timing Register
FUNCTIONAL BLOCK DIAGRAM
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
54Ball(6x9) FBGA
1
2
3
7
8
9
A
VSS
DQ15
VSSQ VDDQ
DQ0
VDD
B
DQ14
DQ13
VDDQ VSSQ
DQ2
DQ1
C
DQ12
DQ11
VSSQ VDDQ
DQ4
DQ3
D
DQ10
DQ9
VDDQ VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD
LDQM
DQ7
F
UDQM
CLK
CKE
CAS
RAS
WE
G
A12
A11
A9
BA0
BA1
CS
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
A3
A2
VDD
Pin Name
Pin Function
CLK
System Clock
CS
Chip Select
CKE
Clock Enable
A
0
~ A
12
Address
BA
0
~ BA
1
Bank Select Address
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
L(U)DQM
Data Input/Output Mask
DQ
0
~
15
Data Input/Output
V
DD
/V
SS
Power Supply/Ground
V
DDQ
/V
SSQ
Data Output Power/Ground
Symbol
Min
Typ
Max
A
-
-
1.00
A
1
0.25
-
-
E
11.4
11.5
11.6
E
1
-
6.40
-
D
9.9
10.0
10.1
D
1
-
6.40
-
e
-
0.80
-
b
0.45
0.50
0.55
z
-
-
0.10
[Unit:mm]
Package Dimension and Pin Configuration
< Top View
*2
>
< Bottom View
*1
>
#A1 Ball Origin Indicator
K4M51
163PC
SEC
W
e
ek
XXXX
5
2
1
6
3
4
8
9
7
F
E
D
C
B
J
H
G
A
e
D
D
1
E
1
E
< Top View
*2
>
z
A
A1
*2: Top View
*1: Bottom View
b
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25
C ~ 85
C for Extended, -25
C ~ 70
C for Commercial)
NOTES :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VIH (max) = 2.2V AC.The overshoot voltage duration is
3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
3ns.
4. Any input 0V
VIN
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
VOUT
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
1.7
1.8
1.95
V
1
V
DDQ
1.7
1.8
1.95
V
1
Input logic high voltage
V
IH
0.8 x V
DDQ
1.8
V
DDQ
+ 0.3
V
2
Input logic low voltage
V
IL
-0.3
0
0.3
V
3
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-2
-
2
uA
4
CAPACITANCE
(V
DD
= 1.8V, T
A
= 23
C, f = 1MHz, V
REF
=0.9V
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
1.5
3.0
pF
RAS, CAS, WE, CS, CKE, DQM
C
IN
1.5
3.0
pF
Address
C
ADD
1.5
3.0
pF
DQ
0
~ DQ
15
C
OUT
3.0
5.0
pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 2.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 2.6
V
Storage temperature
T
STG
-55 ~ +150
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25
C ~ 85
C for Extended, -25
C ~ 70
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5
C tolerance.
4. K4M51163PC-R(B)E/C**
5. K4M51163PC-R(B)G/F**
6. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
Please contact Samsung for more information.
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-90
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
90
90
90
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
0.3
mA
I
CC2
PS CKE & CLK
V
IL
(max), t
CC
=
0.3
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
10
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
1
Active Standby Current
in power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
6
mA
I
CC3
PS CKE & CLK
V
IL
(max), t
CC
=
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
25
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
15
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
95
80
80
mA
1
Refresh Current
I
CC
5
t
ARFC
t
ARFC
(min)
150
150
150
mA
2
Self Refresh Current
I
CC
6
CKE
0.2V
TCSR
45
*3
85/70
C
-E/C
Full Array
300
600
uA
4
1/2 of Full
270
500
1/4 of Full
255
450
-G/F
Full Array
250
500
5
1/2 of Full
220
400
1/4 of Full
205
350
Deep Power Down Current
I
CC
8
CKE
0.2V
10
uA
6
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
1.8V
13.9K
10.6K
Output
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
Vtt=0.5 x VDDQ
50
Output
20pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS
(V
DD
= 1.7V
1.95V, T
A
= -25 ~ 85
C for Extended, -25 ~ 70
C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x V
DDQ
/ 0.2
V
Input timing measurement reference level
0.5 x V
DDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x V
DDQ
V
Output load condition
See Figure 2
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next
higher integer.
2. Minimum delay is required to complete write.
3. Maximum burst refresh cycle : 8
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
Parameter
Symbol
Version
Unit
Note
-75
-90
-1L
Row active to row active delay
t
RRD
(min)
15
18
18
ns
1
RAS to CAS delay
t
RCD
(min)
22.5
24
27
ns
1
Row precharge time
t
RP
(min)
22.5
24
27
ns
1
Row active time
t
RAS
(min)
50
50
50
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
72.5
74
77
ns
1
Last data in to row precharge
t
RDL
(min)
15
ns
2
Last data in to Active delay
t
DAL
(min)
tRDL + tRP
-
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Auto refresh cycle time
t
ARFC
(min)
80
ns
3
Exit self refresh to active command
t
SRFX
(min)
120
ns
Col. address to col. address delay
t
CCD
(min)
1
CLK
4
Number of valid output data
CAS latency=3
2
ea
5
Number of valid output data
CAS latency=2
1
Number of valid output data
CAS latency=1
-
0
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
-75
-90
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
9
1000
9
1000
ns
1
CAS latency=2
t
CC
12
12
15
CAS latency=1
t
CC
-
-
25
CLK to valid output delay
CAS latency=3
t
SAC
6
7
7
ns
1,2
CAS latency=2
t
SAC
9
9
10
CAS latency=1
t
SAC
-
-
20
Output data hold time
CAS latency=3
t
OH
2.5
2.5
2.5
ns
2
CAS latency=2
t
OH
2.5
2.5
2.5
CAS latency=1
t
OH
-
-
2.5
CLK high pulse width
t
CH
2.5
3.0
3.0
ns
3
CLK low pulse width
t
CL
2.5
3.0
3.0
ns
3
Input setup time
t
SS
2.0
2.0
2.0
ns
3
Input hold time
t
SH
1.0
1.0
1.0
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output in Hi-Z
CAS latency=3
t
SHZ
6
7
7
ns
CAS latency=2
9
9
10
CAS latency=1
-
-
20
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
t Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BA0 ~ BA1 : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency
is 0), but in read operation, it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).
COMMAND
CKEn-1 CKEn
CS
RAS CAS
WE DQM BA0,1 A10/AP
A12, A11,
A9 ~ A0
Note
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
X
V
L
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
X
V
L
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Deep Power Down
Entry
H
L
L
H
H
L
X
X
Exit
L
H
H
X
X
X
X
Burst Stop
H
X
L
H
H
L
X
X
6
Precharge
Bank Selection
H
X
L
L
H
L
X
V
L
X
All Banks
X
H
Clock Suspend or
Active Power Down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge Power Down
Mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
X
V
X
7
No Operation Command
H
X
H
X
X
X
X
X
L
H
H
H
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
Register Programmed with Extended MRS
Address
BA1
BA0
A12 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
Mode Select
RFU
*1
DS
RFU
*1
PASR
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
Mode Select
0
1
0
4
4
1
1
Reserved
0
1
1
3
BA1 BA0
Mode
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
0
0
Setting
for Nor-
mal MRS
1
0
0
Reserved
Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page
Reserved
Full Page Length x16 : 64Mb(256), 128Mb(512),256Mb(512),512Mb(1024)
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A12 ~ A10/AP
A9
*2
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
"0" Setting for
Normal MRS
RFU
W.B.L
Test Mode
CAS Latency
BT
Burst Length
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Mode Select
Driver Strength
PASR
BA1
BA0
Mode
A6
A5
Driver Strength
A2
A1
A0
Size of Refreshed Array
0
0
Normal MRS
0
0
Full
0
0
0
Full Array
0
1
Reserved
0
1
1/2
0
0
1
1/2 of Full Array
1
0
EMRS for Mobile SDRAM
1
0
1/4
0
1
0
1/4 of Full Array
1
1
Reserved
1
1
1/8
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A12~A10/AP
A9
A8
A7
A4
A3
1
0
1
Reserved
0
0
0
0
0
0
1
1
0
Reserved
1
1
1
Reserved
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : full array, 1/2 of full array, 1/4 of full array.
BA1=0
Partial Self Refresh Area
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
BA0=0
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
Partial Array Self Refresh
B. POWER UP SEQUENCE
Internal Temperature Compensated Self Refresh (TCSR)
- Full Array
- 1/2 Array
- 1/4 Array
Note :
1. In order to save power consumption, Mobile-SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the two temperature range ; 45
C and 85
C(for Extended), 70
C(for Commercial).
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5
C tolerance.
Temperature Range
Self Refresh Current (IDD6)
Unit
- E / C
- G / F
Full Array
1/2 Array
1/4 Array
Full Array
1/2 Array
1/4 Array
45
C
*3
300
270
255
250
220
205
uA
85/70
C
600
500
450
500
400
350
K4M51163PC - R(B)E/G/C/F
February 2006
Mobile SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
Sequential
Interleave
A1
A0
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
2. BURST LENGTH = 8
Initial Address
Sequential
Interleave
A2
A1
A0
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
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