SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
128Mb E-die SDRAM Specification
Revision 1.2
May. 2003
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
Revision History
Revision 1.0 (Nov. 2002)
- First release.
Revision 1.1 (Apr. 2003)
- x4/x8/x16 Merged spec.
Revision 1.2 (May. 2003)
- Delete -TC(L)7C
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
Part No.
Orgainization
Max Freq.
Interface
Package
K4S280432E-TC(L)75
32Mb x 4
133MHz
LVTTL
54pin TSOP(II)
K4S280832E-TC(L)75
16Mb x 8
133MHz
LVTTL
54pin TSOP(II)
K4S281632E-TC(L)60/75
8Mb x 16
166MHz
LVTTL
54pin TSOP(II)
The
K4S280432E / K4S280832E / K4S281632E
is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x
8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG
s high perfor-
mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible
on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4 & 8 )
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM (x4,x8) & L(U)DQM (x16) for maskin
Auto & self refresh
64ms refresh period (4K Cycle)
GENERAL DESCRIPTION
FEATURES
8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM
Ordering Information
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
11
.
7
6
0.2
0
0.46
3
0.0
0
8
0.002
0.05
MIN
0.008
0.21
0.002
0.05
0
.
020
0.
5
0
(
)
0.005
-0.001
+0.003
0.125
-0.035
+0.075
0.40
0
10.1
6
0.4
5
~0.7
5
0.
018~
0.03
0
0.010
0.25
TYP
0~8
C
#54
#28
#1
#27
0.004
0.10
MAX
0.028
0.71
( )
0.012
0.30
0.0315
0.80
0.047
1.20
MAX
0.039
1.00
0.004
0.10
0.891
22.62
MAX
0.875
22.22
0.004
0.10
+0.10
-0.05
+
0.004
-0.002
54Pin TSOP(II) Package Dimension
Package Physical Dimension
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
Bank Select
Data Input Register
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Sense AMP
O
u
tput Buf
f
er
I/O Control
Column Decoder
Latency & Burst Length
Programming Register
Addre
s
s Register
Row Buf
f
er
Refresh Co
unter
Row Deco
der
Col. Buf
f
er
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
8M x 4 / 4M x 8 / 2M x 16
8M x 4 / 4M x 8 / 2M x 16
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
FUNCTIONAL BLOCK DIAGRAM
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
V
DD
N.C
V
DDQ
N.C
DQ0
V
SSQ
N.C
N.C
V
DDQ
N.C
DQ1
V
SSQ
N.C
V
DD
N.C
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
PIN CONFIGURATION (Top view)
V
SS
N.C
V
SSQ
N.C
DQ3
V
DDQ
N.C
N.C
V
SSQ
N.C
DQ2
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
SS
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A
0
~ A
11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
11
, Column address : CA
0
~ CA
9
, CA
11
BA
0
~ BA
1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM
Data input/output mask
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
DQ
0
~
15
Data input/output
Data inputs/outputs are multiplexed on the same pins.
V
DD
/V
SS
Power supply/ground
Power and ground for the input buffers and the core logic.
V
DDQ
/V
SSQ
Data output power/ground
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
N.C/RFU
No connection
/reserved for future use
This pin is recommended to be left No Connection on the device.
V
DD
DQ0
V
DDQ
N.C
DQ1
V
SSQ
N.C
DQ2
V
DDQ
N.C
DQ3
V
SSQ
N.C
V
DD
N.C
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
V
SS
DQ7
V
SSQ
N.C
DQ6
V
DDQ
N.C
DQ5
V
SSQ
N.C
DQ4
V
DDQ
N.C
V
SS
N.C/RFU
DQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
SS
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
SS
x16
x8
x4
x16
x8
x4
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
C
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DD
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
3ns.
3. Any input 0V
V
IN
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
C, f = 1MHz, V
REF
=1.4V
200
mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
2.5
4.0
pF
1
RAS, CAS, WE, CS, CKE, DQM
C
IN
2.5
5.0
pF
2
Address
C
ADD
2.5
5.0
pF
2
DQ
0
~ DQ
15
C
OUT
4.0
6.5
pF
3
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C)
(x4, x8)
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
90
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
2
mA
I
CC2
PS CKE & CLK
V
IL
(max), t
CC
=
2
Precharge standby current in
non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
10
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS CKE & CLK
V
IL
(max), t
CC
=
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
25
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
110
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
200
mA
2
Self refresh current
I
CC6
CKE
0.2V
C
2
mA
3
L
800
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S2804(08)32E-TC**
4. K4S2804(08)32E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C)
(x16)
Parameter
Symbol
Test Condition
Version
Unit
Note
-60
-75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
130
100
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
2
mA
I
CC2
PS CKE & CLK
V
IL
(max), t
CC
=
2
Precharge standby current in
non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
10
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS CKE & CLK
V
IL
(max), t
CC
=
5
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
30
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
25
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
150
110
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
220
200
mA
2
Self refresh current
I
CC6
CKE
0.2V
C
2
mA
3
L
800
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632E-TC**
4. K4S281632E-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
0.3V, T
A
= 0 to 70
C)
Parameter
Value
Unit
Input levels (Vih/Vil)
2.4/0.4
V
Input timing measurement reference level
1.4
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
1.4
V
Output load condition
See Fig. 2
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
Notes :
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
- 60
- 75
Row active to row active delay
t
RRD
(min)
12
15
ns
1
RAS to CAS delay
t
RCD
(min)
18
20
ns
1
Row precharge time
t
RP
(min)
18
20
ns
1
Row active time
t
RAS
(min)
42
45
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
60
65
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2
Last data in to Active delay
t
DAL
(min)
2 CLK + tRP
-
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
3
Number of valid output data
CAS latency=3
2
ea
4
CAS latency=2
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
- 60
- 75
Unit
Note
Min
Max
Min
Max
CLK cycle
time
CAS latency=3
t
CC
6
1000
7.5
1000
ns
1
CAS latency=2
-
10
CLK to valid
output delay
CAS latency=3
t
SAC
5
5.4
ns
1,2
CAS latency=2
-
6
Output data
hold time
CAS latency=3
t
OH
2.5
3
ns
2
CAS latency=2
-
3
CLK high pulse width
t
CH
2.5
2.5
ns
3
CLK low pulse width
t
CL
2.5
2.5
ns
3
Input setup time
t
SS
1.5
1.5
ns
3
Input hold time
t
SH
1
0.8
ns
3
CLK to output in Low-Z
t
SLZ
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5
5.4
ns
CAS latency=2
-
6
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
I
OH
Characteristics (Pull-up)
Voltage
100MHz
133MHz
Min
100MHz
133MHz
Max
66MHz
Min
(V)
I (mA)
I (mA)
I (mA)
3.45
-2.4
3.3
-27.3
3.0
0.0
-74.1
-0.7
2.6
-21.1
-129.2
-7.5
2.4
-34.1
-153.3
-13.3
2.0
-58.7
-197.0
-27.5
1.8
-67.3
-226.2
-35.5
1.65
-73.0
-248.0
-41.1
1.5
-77.9
-269.7
-47.9
1.4
-80.8
-284.3
-52.4
1.0
-88.6
-344.5
-72.5
0.0
-93.0
-502.4
-93.0
IBIS SPECIFICATION
I
OL
Characteristics (Pull-down)
Voltage
100MHz
133MHz
Min
100MHz
133MHz
Max
66MHz
Min
(V)
I (mA)
I (mA)
I (mA)
0.0
0.0
0.0
0.0
0.4
27.5
70.2
17.7
0.65
41.8
107.5
26.9
0.85
51.6
133.8
33.3
1.0
58.0
151.2
37.6
1.4
70.7
187.7
46.6
1.5
72.9
194.4
48.0
1.65
75.4
202.5
49.5
1.8
77.0
208.6
50.7
1.95
77.6
212.0
51.5
3.0
80.3
219.6
54.2
3.45
81.4
222.6
54.9
0
-100
-200
-300
-400
-500
-600
0
3
0.5
1
1.5
2
2.5
3.5
Voltage
mA
250
200
150
100
50
0
0
3
0.5
1
1.5
2
2.5
3.5
Voltage
mA
66MHz and 100MHz/133MHz Pull-up
66MHz and 100MHz/133MHz Pull-down
I
OH
Min (100MHz/133MHz)
I
OH
Max (66 and 100MHz/133MHz)
I
OH
Min (66MHz)
I
OL
Min (100MHz/133MHz)
I
OL
Max (100MHz/133MHz)
I
OL
Min (66MHz)
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
V
DD
Clamp @ CLK, CKE, CS, DQM & DQ
V
DD
(V)
I (mA)
0.0
0.0
0.2
0.0
0.4
0.0
0.6
0.0
0.7
0.0
0.8
0.0
0.9
0.0
1.0
0.23
1.2
1.34
1.4
3.02
1.6
5.06
1.8
7.35
2.0
9.83
2.2
12.48
2.4
15.30
2.6
18.31
V
SS
Clamp @ CLK, CKE, CS, DQM & DQ
V
SS
(V)
I (mA)
-2.6
-57.23
-2.4
-45.77
-2.2
-38.26
-2.0
-31.22
-1.8
-24.58
-1.6
-18.37
-1.4
-12.56
-1.2
-7.57
-1.0
-3.37
-0.9
-1.75
-0.8
-0.58
-0.7
-0.05
-0.6
0.0
-0.4
0.0
-0.2
0.0
0.0
0.0
20
15
10
5
0
0
3
1
2
Voltage
mA
I (mA)
mA
I (mA)
Minimum V
DD
clamp current
(Referenced to V
DD
)
Minimum V
SS
clamp current
0
-10
-20
-30
-40
-3
0
-2
-1
-50
-60
Voltage
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.2 May. 2003
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
t care, H=Logic high, L=Logic low)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
0,1
A
10
/AP
A
0
~ A
9,
A
11,
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
(A
0
~A
9
,
A
11
)
4
Auto precharge enable
H
4,5
Write &
column address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
(A
0
~A
9
,
A
11
)
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
All banks
X
H
Clock suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
X
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
1. OP Code : Operand code
A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank B is selected.
If BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
If A
10
/AP is "High" at row precharge, BA
0
and BA
1
is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Notes :
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