K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
1
Document Title
64K x16 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial draft
Finalize
- One datasheet for commercial and industrial part.
Revised
- Change datasheet format.
- Remove Icc write current value.
- Remove low power product from product
Draft Data
August 12, 1995
April 15, 1996
February 12, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
2
64K x16 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The K6L1016C3B families are fabricated by SAMSUNG
s
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
FEATURES SUMMARY
Process Technology: Poly Load
Organization: 64K x16
Data Byte Control: LB=I/O
1
~
8
, UB=I/O
9
~
16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 44-TSOP2-400F/R
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
LB
Lower Byte (I/O
1~8
)
A
0
~A
15
Address Inputs
UB
Upper Byte(I/O
9~16
)
I/O
1
~
16
Data Inputs/Outputs
N.C
No Connection
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6L1016C3B-B
Commercial(0~70
C)
4.5 to 5.5V
55*/70ns
20
A
120mA
44-TSOP2-F/R
K6L1016C3B-F
Industrial(-40~85
C)
70/100ns
50
A
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
64
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9
A10 A11 A12 A13 A14
A0
A1
A2
A3
A4
A5
A6
A7
WE
OE
UB
CS
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
A15
Control
logic
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
3
PRODUCT LIST
Commercial Temperature Product(0~70
C)
Industrial Temperature Products(-40~85
C)
Part Name
Function
Part Name
Function
K6L1016C3B-TB55
K6L1016C3B-TB70
K6L1016C3B-RB55
K6L1016C3B-RB70
44-TSOP2-F, 5V, 55ns, LL-pwr
44-TSOP2-F, 5V, 70ns, LL-pwr
44-TSOP2-R, 5V, 55ns, LL-pwr
44-TSOP2-R, 5V, 70ns, LL-pwr
K6L1016C3B-TF70
K6L1016C3B-TF10
K6L1016C3B-RF70
K6L1016C3B-RF10
44-TSOP2-F, 5V, 70ns, LL-pwr
44-TSOP2-F, 5V, 100ns, LL-pwr
44-TSOP2-R, 5V, 70ns, LL-pwr
44-TSOP2-R, 5V, 100ns, LL-pwr
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to Vcc+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
C
-
Operating Temperature
T
A
0 to 70
C
K6L1016C3B-B
-40 to 85
C
K6L1016C3B-F
Soldering temperature and time
T
SOLDER
260
C, 10sec(Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
C, otherwise specified
Industrial Product : T
A
=-40 to 85
C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
30ns
3. Undershoot : -3.0V in case of pulse width
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
V
CC
+0.5
2)
V
Input low voltage
V
IL
-0.5
3)
-
0.8
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
6
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
1. Industrial Product = 50
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=V
SS
to V
CC
-1
-
1
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL,
V
IO
=V
SS
to V
CC
-1
-
1
A
Operating power supply
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH,
Read
-
-
10
mA
Average operating current
I
CC1
Cycle time=1
s, 100% duty, I
IO
=0mA
CS
0.2V, V
IN
0.2V or V
IN
Vcc-0.2V
Read
-
-
15
mA
Write
-
-
40
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
-
-
120
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IL
or V
IH
-
-
3
mA
Standby Current(CMOS)
I
SB1
CS
V
CC
-0.2V, Other inputs=
0
V
CC
-
-
20
1)
A
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
5
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
=30pF+1TTL
AC CHARACTERISTICS
Parameter List
Symbol
Speed Bins
Units
55ns
70ns
100ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
t
RC
55
-
70
-
100
-
ns
Address access time
t
AA
-
55
-
70
-
100
ns
Chip select to output
t
CO
-
55
-
70
-
100
ns
Output enable to valid output
t
OE
-
25
-
35
-
50
ns
UB,LB Access Time
t
BA
-
25
-
35
-
50
ns
Chip select to low-Z output
t
LZ
10
-
10
-
10
-
ns
UB,LB enable to low-Z output
t
BLZ
5
-
5
-
5
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
20
0
25
0
30
ns
UB,LB disable to high-Z output
t
BHZ
0
20
0
25
0
30
ns
Output disable to high-Z output
t
OHZ
0
20
0
25
0
30
ns
Output hold from address change
t
OH
10
-
15
-
15
-
ns
Write
Write cycle time
t
WC
55
-
70
-
100
-
ns
Chip select to end of write
t
CW
45
-
60
-
80
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
45
-
60
-
80
-
ns
Write pulse width
t
WP
40
-
50
-
70
-
ns
UB, LB valid to end of write
t
BW
45
-
60
-
80
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
25
0
30
0
35
ns
Data to write time overlap
t
DW
25
-
30
-
40
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
V
CC
for data retention
V
DR
CS
Vcc-0.2V
2.0
-
5.5
V
Data retention current
I
DR
V
CC
=3.0V, CS
Vcc-0.2V
-
-
15
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES (READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
7
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
Data Undefined
UB, LB
WE
Data in
Data out
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS Controlled)
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
High-Z
High-Z
Data Valid
t
AS(3)
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
8
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to end of write.
3.
t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end or write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
K6L1016C3B
CMOS SRAM
Revision 2.0
February 1998
9
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
Unit: millimeter(inch)
0
.
0
0
2
#1
0
.
0
5
#22
#44
#23
0.35
0.10
0.014
0.004
0.80
0.0315
M
I
N
.
0.047
1.20
MAX.
0.741
18.81
MAX.
18.41
0.10
0.725
0.004
11.76
0.20
0.463
0.008
+ 0.
10
- 0.0
5
0.50
+ 0.
004
- 0.0
02
0.15
0.00
6
0.020
1
0
.
1
6
0
.
4
0
0
0.10
0.004
PACKAGE DIMENSIONS
0~8
0.45 ~0.75
0.018 ~ 0.030
0.25
( )
0.010
( )
0.805
0.032
( )
MAX
1.00
0.10
0.039
0.004
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0
.
0
0
2
#1
0
.
0
5
#22
#44
#23
0.35
0.10
0.014
0.004
0.80
0.0315
M
I
N
.
0.047
1.20
MAX.
0.741
18.81
MAX.
18.41
0.10
0.725
0.004
11.76
0.20
0.463
0.008
+ 0
.10
- 0.0
5
0.50
+ 0.0
04
- 0.
002
0.15
0.00
6
0.020
1
0
.
1
6
0
.
4
0
0
0.10
0.004
0~8
0.45 ~0.75
0.018 ~ 0.030
0.25
( )
0.010
( )
0.805
0.032
( )
MAX
1.00
0.10
0.039
0.004
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