K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 1 -
February 1998
Document Title
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Remark
Design Target
Preliminary
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Add Capacitive load of the test environment in A.C test load.
2.5. Change D.C characteristics.
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
I
CC
200/190/180mA
200/195/190mA
I
SB
30mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Feb. 25th, 1998
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 2 -
February 1998
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
15
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
64K x 16 Bit High-Speed CMOS Static RAM
The K6R1016C1B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 65,536 words by 16 bits. The
K6R1016C1B uses 16 common input and output lines and has
at output enable pin which operates faster than address access
time at read cycle. Also it allows that lower and upper byte
access by data byte control (UB, LB). The device is fabricated
using SAMSUNG
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications. The
K6R1016C1B is packaged in a 400mil 44-pin plastic SOJ or
TSOP2 forward.
GENERAL DESCRIPTION
FEATURES
Fast Access Time 8,10,12ns(Max.)
Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
Operating K6R1016C1B-8 : 200mA(Max.)
K6R1016C1B-10 : 195mA(Max.)
K6R1016C1B-12 : 190mA(Max.)
Single 5.0V
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Data Byte Control : LB : I/O
1
~ I/O
8,
UB : I/O
9
~ I/O
16
Standard Pin Configuration
K6R1016C1B-J : 44-SOJ-400
K6R1016C1B-T : 44-TSOP2-400BF
CLK. Gen.
I/O
1
~I/O
8
OE
UB
CS
PIN CONFIGURATION
(Top View)
SOJ/
FUNCTIONAL BLOCK DIAGRAM
TSOP2
R
o
w
S
e
l
e
c
t
Data
Cont.
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
CLK
Gen.
Pre-Charge Circuit
Memory Array
256 Rows
256x16 Columns
I/O Circuit &
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
15
A
14
A
13
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C
A
12
A
11
A
10
A
9
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
N.C
A
0
I/O
9
~I/O
16
Data
Cont.
WE
LB
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
K6R1016C1B -C8/C10/C12
Commercial Temp.
K6R1016C1B-I8/I10/I12
Industrial Temp.
ORDERING INFORMATION
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 3 -
February 1998
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 7.0
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
D
1.0
W
Storage Temperature
T
STG
-65 to 150
C
Operating Temperature
Commercial
T
A
0 to 70
C
Industrial
T
A
-40 to 85
C
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
= to 70
C)
* The above parameters are also guaranteed at industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
6ns) for I
20mA.
*** V
IH
(Max) = V
CC +
2.0V a.c (Pulse Width
6ns) for I
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5**
V
Input Low Voltage
V
IL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
C, Vcc=5.0V
10%, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
** V
CC
=5.0V
5%, Temp.=25
C.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
A
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
= V
IH
or
V
IL,
I
OUT
=0mA
8ns
-
200
mA
10ns
-
195
12ns
-
190
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
50
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
-
10
mA
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1
**
I
OH1
=-0.1mA
-
3.95
V
CAPACITANCE*
(T
A
=25
C
, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 4 -
February 1998
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
C, V
CC
=5.0V
10%, unless otherwise noted.)
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016C1B-8
K6R1016C1B-10
K6R1016C1B-12
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
8
-
10
-
12
-
ns
Address Access Time
t
AA
-
8
-
10
-
12
ns
Chip Select to Output
t
CO
-
8
-
10
-
12
ns
Output Enable to Valid Output
t
OE
-
4
-
5
-
6
ns
UB, LB Access Time
t
BA
-
4
-
5
-
6
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
4
0
5
0
6
ns
Output Disable to High-Z Output
t
OHZ
0
4
0
5
0
6
ns
UB, LB Disable to High-Z Output
t
BHZ
0
4
0
5
0
6
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Output Loads(B)
D
OUT
5pF*
480
255
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 5 -
February 1998
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016C1B-8
K6R1016C1B-10
K6R1016C1B-12
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
12
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
8
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
8
-
ns
Write Pulse Width (OE High)
t
WP
6
-
7
-
8
-
ns
Write Pulse Width (OE Low)
t
WP1
8
-
10
-
12
-
ns
UB, LB Valid to End of Write
t
BW
6
-
7
-
8
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
0
6
ns
Data to Write Time Overlap
t
DW
4
-
5
-
6
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
)
t
AA
t
RC
t
OH
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 6 -
February 1998
TIMING WAVEFORM OF WRITE CYCLE(1)
(OE Clock)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP(2)
t
AS(4)
t
DH
t
DW
t
OHZ(6)
High-Z
High-Z
Valid Data
OE
t
AW
t
WR(5)
NOTES(READCYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(Max) is less than t
LZ
(Min) both for a given device and from device to device.
5. Transition is measured
200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Valid Data
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
HZ(3,4,5)
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
BHZ(3,4,5)
t
BLZ(4,5)
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 7 -
February 1998
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS = Controlled)
Address
CS
t
AW
t
DW
t
DH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
UB, LB
t
CW(3)
t
WP(2)
t
AS(4)
t
WC
t
WR(5)
High-Z
High-Z
t
LZ
t
WHZ(6)
t
BW
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE =Low fixed)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP1(2)
t
DH
t
DW
t
WR(5)
t
AS(4)
t
OW
t
WHZ(6)
(10)
(9)
High-Z
Valid Data
t
AW
High-Z
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 8 -
February 1998
FUNCTIONAL DESCRIPTION
* X means Don
t Care
.
CS
WE
OE
LB
UB
Mode
I/O Pin
Supply Current
I/O
1
~I/O
8
I/O
9
~I/O
16
H
X
X*
X
X
Not Select
High-Z
High-Z
I
SB
, I
SB1
L
H
H
X
X
Output Disable
High-Z
High-Z
I
CC
L
X
X
H
H
L
H
L
L
H
Read
D
OUT
High-Z
I
CC
H
L
High-Z
D
OUT
L
L
D
OUT
D
OUT
L
L
X
L
H
Write
D
IN
High-Z
I
CC
H
L
High-Z
D
IN
L
L
D
IN
D
IN
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS, WE, LB and UB. A write begins at the latest transition CS going low and WE
going low ; A write ends at the earliest transition CS going high or WE going high. t
WP
is measured from the beginning of write
to the end of write.
3. t
CW
is measured from the later of CS going low to end of write.
4. t
AS
is measured from the address valid to the beginning of write.
5. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
Address
CS
Valid Data
UB, LB
WE
Data in
Data out
TIMING WAVEFORM OF WRITE CYCLE(4)
(UB, LB Controlled)
t
WC
t
CW(3)
t
BW
t
WP(2)
t
DH
t
DW
t
WR(5)
t
AW
t
AS(4)
High-Z
High-Z(8)
t
BLZ
t
WHZ(6)
High-Z
K6R1016C1B-C, K6R1016C1B-I
CMOS SRAM
Rev 2.0
- 9 -
February 1998
#1
44-SOJ-400
#44
25.58
0.12
1.125
0.005
MAX
28.98
1.141
MAX
0.148
3.76
1.19
( )
0.047
1.27
( )
0.050
0.95
( )
0.0375
+0.10
0.43
-0.05
+0.004
0.017
-0.002
+0.10
0.71
-0.05
+0.004
0.028
-0.002
1.27
0.050
1
0
.
1
6
0
.
4
0
0
+0.10
0.20
-0.05
+0.004
0.008
-0.002
9.40
0.25
0.370
0.010
MIN
0.69
0.027
#22
#23
0.004
0.10
MAX
11.18
0.12
0.440
0.005
PACKAGE DIMENSIONS
Units:millimeters/Inches
1.00
0.10
0.039
0.004
44-TSOP2-400BF
0.002
#1
0.05
#22
#23
0.30
0.012
0.80
0.0315
MIN
0.047
1.20
MAX
0.741
18.81
MAX
18.41
0.10
0.725
0.004
11.76
0.20
0.463
0.008
+ 0.075
- 0.035
0.50
+ 0.003
- 0.001
0.125
0.005
0.020
1
0
.
1
6
0
.
4
0
0
0.10
0.004
0~8
0.45 ~0.75
0.018 ~ 0.030
( )
0.805
0.032
( )
MAX
Units:millimeters/Inches
#44
0.25
0.010 TYP
+
0.10
-
0.05
+
0.004
-
0.002
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