CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
Document Title
128K x16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial Draft
Revise
- Increased operating current(I
CC1
):20mA
25mA
Finalize
Draft Data
October 1, 1997
December 9, 1997
August 27, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
128K x16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T2016U3M families are fabricated by SAMSUNG
s
advanced CMOS process technology. The families support
various operating temperature ranges and small package for
user flexibility of system design. The families also support low
data retention voltage for battery back-up operation with low
data retention current.
FEATURES
Process Technology: TFT
Organization:128Kx16
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 44-TSOP2 -400F
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
I/O
1
~I/O
16
Data Inputs/Outputs
OE
Output Enable Input
A
0
~A
16
Address Inputs
WE
Write Enable Input
Vcc
Power
UB
Upper Block Select Input
Vss
Ground
LB
Lower Block Select Input
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6T2016U3M-B
Commercial(0~70
C)
2.7~3.3V
85
1)
/100ns
10
A
55mA
44-TSOP2-F
K6T2016U3M-F
Industrial(-40~85
C)
15
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Precharge circuit.
Memory array
1024 rows
128
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A10 A11 A12 A13 A14 A15
A0
A1
A2
A3
A4
A5
A6
A7
CS
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A16
WE
OE
UB
LB
Control
logic
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
PRODUCT LIST
Note : LL - Low Low Standby Current
Commercial Temperature Products(0~70
C)
Industrial Temperature Products(-40~85
C)
Part Name
Function
Part Name
Function
K6T2016U3M-TB85
K6T2016U3M-TB10
44-TSOP2, 85ns, 3.0V, LL
44-TSOP2, 100ns, 3.0V, LL
K6T2016U3M-TF85
K6T2016U3M-TF10
44-TSOP2, 85ns, 3.0V, LL
44-TSOP2, 100ns, 3.0V, LL
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.6
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
C
-
Operating Temperature
T
A
0 to 70
C
K6T2016U3M-L
-40 to 85
C
K6T2016U3M-P
Soldering temperature and time
T
SOLDER
260
C, 10sec (Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
C, otherwise specified
Industrial Product : T
A
=-40 to 85
C, otherwise specified
2. Overshoot : V
CC
+2.0V in case of pulse width
20ns
3. Undershoot : -2.0V in case of pulse width
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
K6T2016U3M Family
2.7
3.0
3.3
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
K6T2016U3M Family
2.2
-
Vcc+0.3
V
Input low voltage
V
IL
K6T2016U3M Family
-0.3
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. K6T2016U3M-I Family =15
A
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH,
Read
-
-
5
mA
Average operating current
I
CC1
Cycle time=1
s, 100% duty, I
IO
=0mA
CS
0.2V V
IN
0.2V or V
IN
Vcc-0.2V
Read
-
-
5
mA
Write
-
-
25
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
-
-
55
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IL
or V
IH
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
Vcc-0.2V, Other inputs=0~Vcc
-
-
10
1)
A
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
AC CHARACTERISTICS
(V
CC
=2.7~3.3V, K6T2016U3M-L Family:T
A
=0 to 70
C, K6T2016U3M-I Family:T
A
=-40 to 85
C)
1. The parameter is measured with 30pF test load.
Parameter List
Symbol
Speed Bins
Units
85
1)
ns
100ns
Min
Max
Min
Max
Read
Read cycle time
t
RC
85
-
100
-
ns
Address access time
t
AA
-
85
-
100
ns
Chip select to output
t
CO
-
85
-
100
ns
Output enable to valid output
t
OE
-
45
-
55
ns
Byte enable to valid output
t
BA
-
45
-
55
ns
Chip select to low-Z output
t
LZ
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
ns
UB, LB enable to low-Z output
t
BLZ
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
25
0
30
ns
UB, LB disable to high-Z output
t
BHZ
0
25
0
30
ns
Output disable to high-Z output
t
OHZ
0
25
0
30
ns
Output hold from address change
t
OH
15
-
15
-
ns
Write
Write cycle time
t
WC
85
-
100
-
ns
Chip select to end of write
t
CW
70
-
80
-
ns
Address set-up time
t
AS
0
-
0
-
ns
Address valid to end of write
t
AW
75
-
80
-
ns
UB, LB valid to end of write
t
BW
75
-
80
-
ns
Write pulse width
t
WP
60
-
70
-
ns
Write recovery time
t
WR
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
30
0
30
ns
Data to write time overlap
t
DW
35
-
40
-
ns
Data hold from write time
t
DH
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
Vcc-0.2V
2.0
-
3.3
V
Data retention current
I
DR
Vcc=3.0V, CS
Vcc-0.2V
-
-
10
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
C
L
1
)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES (READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
Data Undefined
UB, LB
WE
Data in
Data out
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS Controlled)
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
High-Z
High-Z
Data Valid
t
AS(3)
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to end of write.
3.
t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end or write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
2.7V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
CMOS SRAM
K6T2016U3M Family
Revision 1.0
August 1998
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
Unit: millimeters(inches)
0
.
0
0
2
#1
0
.
0
5
#22
#44
#23
0.35
0.10
0.014
0.004
0.80
0.0315
M
I
N
.
0.047
1.20
MAX.
0.741
18.81
MAX.
18.41
0.10
0.725
0.004
11.76
0.20
0.463
0.008
+ 0.
10
- 0.0
5
0.50
+ 0.0
04
- 0.0
02
0.15
0.00
6
0.020
1
0
.
1
6
0
.
4
0
0
0.10
0.004
PACKAGE DIMENSIONS
0~8
0.45 ~0.75
0.018 ~ 0.030
0.25
( )
0.010
( )
0.805
0.032
( )
MAX
1.00
0.10
0.039
0.004
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