K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
1
Preliminary
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
0.21
Remark
Preliminary
Preliminary
Preliminary
Preliminary
History
Initial Draft
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Commercial product
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
Draft Data
July 29, 2002
October 14, 2002
December 2, 2002
March 26, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
2
Preliminary
512K
8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG
s
advanced full CMOS process technology. The families support
various operating temperature range and have various pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K
8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
A
0
~A
18
Address Inputs
Vcc
Power
WE
Write Enable Input
Vss
Ground
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
PRODUCT FAMILY
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
Product Family Operating Temperature
Vcc
Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6X4008T1F-B
Commercial(0~70
C)
2.7~3.6V
55
1)
/70
2)
/85ns
15
A
30mA
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F/R
K6X4008T1F-F
Industrial(-40~85
C)
20
A
K6X4008T1F-Q
Automotive(-40~125
C)
70
2)
/85ns
30
A
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F
FUNCTIONAL BLOCK DIAGRAM
32-SOP
(Forward)
32-TSOP2
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Reverse)
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
I/O Circuit
Column select
Clk gen.
Row
select
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Control
logic
32-
S
TSOP1
Row
Addresses
Column Addresses
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
3
Preliminary
PRODUCT LIST
1. Operating voltage range is 3.0V~3.6V
Commercial Products(0~70
C)
Industrial Products(-40~85
C)
Automotive Products(-40~125
C)
Part Name
Function
Part Name
Function
Part Name
Function
K6X4008T1F-GB55
1)
K6X4008T1F-GB70
K6X4008T1F-GB85
K6X4008T1F-YB55
1)
K6X4008T1F-YB70
K6X4008T1F-YB85
K6X4008T1F-VB55
1)
K6X4008T1F-VB70
K6X4008T1F-VB85
K6X4008T1F-MB55
1)
K6X4008T1F-MB70
K6X4008T1F-MB85
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-sTSOP1-F, 55ns, LL
32-sTSOP1-F, 70ns, LL
32-sTSOP1-F, 85ns, LL
32-TSOP2-F, 55ns, LL
32-TSOP2-F, 70ns, LL
32-TSOP2-F, 85ns, LL
32-TSOP2-R, 55ns, LL
32-TSOP2-R, 70ns, LL
32-TSOP2-R, 85ns, LL
K6X4008T1F-GF55
1)
K6X4008T1F-GF70
K6X4008T1F-GF85
K6X4008T1F-YF55
1)
K6X4008T1F-YF70
K6X4008T1F-YF85
K6X4008T1F-VF55
1)
K6X4008T1F-VF70
K6X4008T1F-VF85
K6X4008T1F-MF55
1)
K6X4008T1F-MF70
K6X4008T1F-MF85
32-SOP, 55ns, LL
32-SOP, 70ns, LL
32-SOP, 85ns, LL
32-sTSOP1-F, 55ns, LL
32-sTSOP1-F, 70ns, LL
32-sTSOP1-F, 85ns, LL
32-TSOP2-F, 55ns, LL
32-TSOP2-F, 70ns, LL
32-TSOP2-F, 85ns, LL
32-TSOP2-R, 55ns, LL
32-TSOP2-R, 70ns, LL
32-TSOP2-R, 85ns, LL
K6X4008T1F-GQ70
K6X4008T1F-GQ85
K6X4008T1F-YQ70
K6X4008T1F-YQ85
K6X4008T1F-VQ70
K6X4008T1F-VQ85
32-SOP, 70ns, L
32-SOP, 85ns, L
32-sTSOP1-F, 70ns, L
32-sTSOP1-F, 85ns, L
32-TSOP2-F, 70ns, L
32-TSOP2-F, 85ns, L
FUNCTIONAL DESCRIPTION
1. X means don
t care (Must be in low or high state)
CS
OE
WE
I/O
Mode
Power
H
X
1)
X
1)
High-Z
Deselected
Standby
L
H
H
High-Z
Output Disabled
Active
L
L
H
Dout
Read
Active
L
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.2 to V
CC
+0.3(max. 3.9V)
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 3.9
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
C
-
Operating Temperature
T
A
0 to 70
C
K6F4008T1F-B
-40 to 85
C
K6F4008T1F-F
-40 to 125
C
K6F4008T1F-Q
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
4
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product: T
A
=0 to 70
C, otherwise specified
Industrial Product: T
A
=-40 to 85
C, otherwise specified
Automotive Product: T
A
=-40 to 125
C, otherwise specified
2. Overshoot: V
CC
+2.0V in case of pulse width
30ns
3. Undershoot: -2.0V in case of pulse width
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
-1
-
1
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
4
mA
Average operating current
I
CC1
Cycle time=1
s, 100% duty, I
IO
=0mA CS
0.2V,V
IN
0.2V or V
IN
Vcc-0.2V
-
-
4
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
30
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
Vcc-0.2V, Other inputs=0~Vcc
K6X4008T1F-B
-
-
15
A
K6X4008T1F-F
-
-
20
A
K6X4008T1F-Q
-
-
30
A
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
5
Preliminary
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Commercial product: T
A
=0 to 70
C, Industrial product: T
A
=-40 to 85
C, Automotive product: T
A
=-40 to 125
C)
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
Parameter List
Symbol
Speed Bins
Units
55ns
1)
70ns
85ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
t
RC
55
-
70
-
85
-
ns
Address access time
t
AA
-
55
-
70
-
85
ns
Chip select to output
t
CO
-
55
-
70
-
85
ns
Output enable to valid output
t
OE
-
25
-
35
-
40
ns
Chip select to low-Z output
t
LZ
10
-
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
20
0
25
0
25
ns
Output disable to high-Z output
t
OHZ
0
20
0
25
0
25
ns
Output hold from address change
t
OH
10
-
10
-
10
-
ns
Write
Write cycle time
t
WC
55
-
70
-
85
-
ns
Chip select to end of write
t
CW
45
-
60
-
70
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
45
-
60
-
70
-
ns
Write pulse width
t
WP
40
-
55
-
55
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
20
0
25
0
25
ns
Data to write time overlap
t
DW
25
-
30
-
35
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. 55ns, 70ns product
DATA RETENTION CHARACTERISTICS
1. Typical values are measured at T
A
= 25
C and not 100% tested.
Item
Symbol
Test Condition
Min
Typ
1)
Max
Unit
Vcc for data retention
V
DR
CS
Vcc-0.2V
2.0
-
3.6
V
Data retention current
I
DR
Vcc=3.0V, CS
Vcc-0.2V
K6X4008T1F-B
-
0.5
15
A
K6X4008T1F-F
-
20
A
K6X4008T1F-Q
-
30
A
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
6
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES (READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ
t
RC
t
OE
t
CO1
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
7
Preliminary
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
Controlled)
Address
CS
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
t
CW(2)
t
WP(1)
t
AW
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, t
WP
is measured from the begining of write
to the end of write.
2. t
CW
is measured from the CS going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end of write to the address change. t
WR
is applied in case a write ends with CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
V
CC
2.7V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
t
CW(2)
t
WR(4)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
8
Preliminary
PACKAGE DIMENSIONS
Units: millimeters(inches)
32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)
0~8
#32
20.47
0.20
0.806
0.008
MAX
20.87
0.822
MAX
2.74
0.20
0.108
0.008
3.00
0.118
MIN
0.002
0.05
0.004 MAX
0.10 MAX
#1
0.71
( )
0.028
1
3
.
3
4
0
.
5
2
5
11.43
0.20
0.450
0.008
0.80
0.20
0.031
0.008
+0.10
0.20
-0.05
+0.004
0.008
-0.002
14.12
0.30
0.556
0.012
#17
#16
1.27
0.050
+0.100
0.41
-0.050
+0.004
0.016
-0.002
32 PIN SMALLER THIN SMALL OUTLINE PACKAGE TYPE I (0813.4F)
1.00
0.10
0.039
0.004
MAX
8.40
0.331
1
.
1
0
M
A
X
0
.
0
0
4
M
A
X
#1
0.50
( )
0.020
11.80
0.10
0.465
0.004
0.45 ~0.75
0.018 ~0.030
13.40
0.20
0.528
0.008
+0.10
0.15
-0.05
+0.004
0.006
-0.002
0~8
+0.10
0.20
-0.05
+0.004
0.008
-0.002
0.50
0.0197
0.25
( )
0.010
MIN
0.05
0.002
MAX
1.20
0.047
8
.
0
0
0
.
3
1
5
TYP
0.25
0.010
#16
#32
#17
K6X4008T1F Family
CMOS SRAM
Revision 0.21
March 2003
9
Preliminary
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0~8
#32
20.95
0.10
0.825
0.004
MAX
21.35
0.841
MAX
1.00
0.10
0.039
0.004
1.20
0.047
MIN
0.002
0.05
0.004 MAX
0.10 MAX
#1
0.95
( )
0.037
1
0
.
1
6
0
.
4
0
0
+0.10
0.15
-0.05
+0.004
0.006
-0.002
11.76
0.20
0.463
0.008
#17
#16
0.50
( )
0.020
0.45~0.75
0.018 ~ 0.030
0.25
( )
0.010
1.27
0.050
0.40
0.10
0.016
0.004
PACKAGE DIMENSIONS
32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0~8
#32
#1
1
0
.
1
6
0
.
4
0
0
+0.10
0.15
-0.05
+0.004
0.006
-0.002
11.76
0.20
0.463
0.008
#17
#16
0.50
( )
0.020
0.45 ~0.75
0.018 ~ 0.030
0.25
( )
0.010
20.95
0.10
0.825
0.004
MAX
21.35
0.841
MAX
1.00
0.10
0.039
0.004
1.20
0.047
MIN
0.002
0.05
0.004 MAX
0.10 MAX
0.95
( )
0.037
1.27
0.050
0.40
0.10
0.016
0.004
Units: millimeters(inches)
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