K6X8016T3B Family
Revision 1.0
September 2003
1
CMOS SRAM
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Deleted 44-TSOP2-400R package type.
Finalized
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 45mA to 30mA
- Changed I
SB
1
(industrial)
from 30
A to 15
A
- Changed I
SB
1
(Automotive)
from 40
A to 25
A
Draft Date
October 31, 2002
December 11, 2002
September 16, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
K6X8016T3B Family
Revision 1.0
September 2003
2
CMOS SRAM
512Kx16 bit Low Power Full CMOS Static RAM
GENERAL DESCRIPTION
The K6X8016T3B families are fabricated by SAMSUNG
s
advanced full CMOS process technology. The families support
various operating temperature range for user flexibility of sys-
tem design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three state outputs
Package Type: 44-TSOP2-400F
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
18
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
PRO
DUCT FAMILY
1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
K6X8016T3B-F
Industrial(-40~85
C)
2.7~3.6V
55
1)
/70ns
15
A
30mA
44-TSOP2-400F
K6X8016T3B-Q
Automotive(-40~125
C)
70ns
25
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
1024 rows
512
16 columns
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
UB
CS
LB
Control Logic
Row
Addresses
Column Addresses
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
A9
A10
A11
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A14
A13
A12
K6X8016T3B Family
Revision 1.0
September 2003
3
CMOS SRAM
PRODUCT LIST
1. Operating voltage range is 3.0~3.6V
Industrial Temperature Products(-40~85
C)
Automotive Temperature Products(-40~125
C)
Part Name
Function
Part Name
Function
K6X8016T3B-TF55
1)
K6X8016T3B-TF70
44-TSOP2-F, 55ns, Low Low Power
44-TSOP2-F, 70ns, Low Low Power
K6X8016T3B-TQ70
44-TSOP2-F, 70ns, Low Power
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.2 to V
CC
+0.3 (max. 3.9V)
V
-
Voltage on Vcc supply relative to
V
CC
-0.2 to 3.9
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
C
-
Operating Temperature
T
A
-40 to 85
C
K6X8016T3B-F
-40 to 125
C
K6X8016T3B-Q
FUNCTIONAL DESCRIPTION
Note: X means don
t care. (Must be low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
X
X
X
High-Z
High-Z
Deselected
Standby
L
H
H
X
X
High-Z
High-Z
Output Disabled
Active
L
X
X
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
L
L
L
Din
Din
Word Write
Active
K6X8016T3B Family
Revision 1.0
September 2003
4
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Industrial Product: T
A
=-40 to 85
C, otherwise specified.
Automotive Product: T
A
=-40 to 125
C, otherwise specified.
2. Overshoot: V
CC
+3.0V in case of pulse width
30ns.
3. Undershoot: -3.0V in case of pulse width
30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.3
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
A
Output leakage current
I
LO
CS=V
IH,
OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL,
WE=V
IH
, V
IN
=V
IH
or V
IL
-
-
2
mA
Average operating current
I
CC1
Cycle time=1
s, 100% duty, I
IO
=0mA, CS
0.2V, V
IN
0.2V or
V
IN
V
CC
-0.2V
-
-
3
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty, CS=V
IL
, V
IN
=V
IL
or V
IH
-
-
30
mA
Output low voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IH
or V
IL
-
-
0.4
mA
Standby Current(CMOS)
I
SB1
CS
Vcc-0.2V, Other inputs=0~Vcc
K6X8016T3B-F
-
-
15
A
K6X8016T3B-Q
-
-
25
K6X8016T3B Family
Revision 1.0
September 2003
5
CMOS SRAM
C
L
1
)
1.Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
=50pF+1TTL
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
V
DR
CS
Vcc-0.2V
1.5
-
3.6
V
Data retention current
I
DR
Vcc=1.5V, CS
Vcc-0.2V
K6X8016T3B-F
-
-
6
A
K6X8016T3B-Q
-
-
10
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Industrial product:T
A
=-40 to 85
C, Automotive product:T
A
=-40 to 125
C)
1. Voltage range is 3.0V~3.6V for industrial product.
Parameter List
Symbol
Speed Bins
Units
55ns
1
)
70ns
Min
Max
Min
Max
Read
Read cycle time
t
RC
55
-
70
-
ns
Address access time
t
AA
-
55
-
70
ns
Chip select to output
t
CO
-
55
-
70
ns
Output enable to valid output
t
OE
-
25
-
35
ns
Chip select to low-Z output
t
LZ
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
ns
LB, UB enable to low-Z output
t
BLZ
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
20
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
20
0
25
ns
Output hold from address change
t
OH
10
-
10
-
ns
LB, UB valid to data output
t
BA
-
25
-
35
ns
UB, LB disable to high-Z output
t
BHZ
0
20
0
25
ns
Write
Write cycle time
t
WC
55
-
70
-
ns
Chip select to end of write
t
CW
45
-
60
-
ns
Address set-up time
t
AS
0
-
0
-
ns
Address valid to end of write
t
AW
45
-
60
-
ns
Write pulse width
t
WP
40
-
55
-
ns
Write recovery time
t
WR
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
20
0
25
ns
Data to write time overlap
t
DW
20
-
30
-
ns
Data hold from write time
t
DH
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
ns
LB, UB valid to end of write
t
BW
45
-
60
-
ns
K6X8016T3B Family
Revision 1.0
September 2003
6
CMOS SRAM
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES (READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
K6X8016T3B Family
Revision 1.0
September 2003
7
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS Controlled)
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
K6X8016T3B Family
Revision 1.0
September 2003
8
CMOS SRAM
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
2.7V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
K6X8016T3B Family
Revision 1.0
September 2003
9
CMOS SRAM
Unit: millimeters(inches)
PACKAGE DIMENSIONS
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0
.
0
0
2
#1
0
.
0
5
#22
#44
#23
0.35
0.10
0.014
0.004
0.80
0.0315
M
I
N
.
0.047
1.20
MAX.
0.741
18.81
MAX.
18.41
0.10
0.725
0.004
11.76
0.20
0.463
0.008
+ 0.
10
- 0.0
5
0.50
+ 0.0
04
- 0.
002
0.15
0.00
6
0.020
1
0
.
1
6
0
.
4
0
0
0.10
0.004
0~8
0.45 ~0.75
0.018 ~ 0.030
0.25
( )
0.010
( )
0.805
0.032
( )
MAX
1.00
0.10
0.039
0.004
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