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256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 1 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
Document Title
256Kx36 & 512Kx18-Bit Pipelined NtRAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
1.0
2.0
2.1
3.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
History
1. Initial document.
1. Add x32 org part and industrial temperature part
1. change scan order(1) form 4T to 6T at 119BGA(x18)
1. Final spec release
2. Change I
SB2
form 50mA to 60mA
Change ordering information( remove 225MHz at Nt-Pipelined)
1. Delete 119BGA package
1. Remove x32 organization
Draft Date
May. 18. 2001
Aug. 11. 2001
Aug. 28 .2001
Nov. 16. 2001
April. 01. 2002
April. 04. 2003
Nov. 17. 2003
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 2 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
8Mb NtRAM(Flow Through / Pipelined) Ordering Information
Org.
Part Number
Mode
VDD
Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz)
PKG
Temp
512Kx18
K7M801825B-QC(I)65/75
FlowThrough
3.3
6.5/7.5 ns
Q:
100TQFP
C:
Commercial
Temperature
Range
I:
Industrial
Temperature
Range
K7N801801B-QC(I)16/13
Pipelined
3.3
167/133 MHz
K7N801809B-QC(I)25
Pipelined
3.3
250 MHz
K7N801845B-QC(I)16/13
Pipelined
2.5
167/133 MHz
K7N801849B-QC(I)25
Pipelined
2.5
250MHz
256Kx36
K7M803625B-QC(I)65/75
FlowThrough
3.3
6.5/7.5 ns
K7N803601B-QC(I)16/13
Pipelined
3.3
167/133 MHz
K7N803609B-QC(I)25
Pipelined
3.3
250 MHz
K7N803645B-QC(I)16/13
Pipelined
2.5
167/133 MHz
K7N803649B-QC(I)25
Pipelined
2.5
250 MHz
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 3 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
256Kx32 & 256Kx36 & 512Kx18-Bit Pipelined NtRAM
TM
The K7N803601B and K7N801801B are
9,437,184 bits Synchronous Static SRAMs.
The NtRAM
TM
, or No Turnaround Random Access Memory uti-
lizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, pipelined SRAM output data is temporarily
stored by an edge triggered output register and then released
to the output buffers at the next rising edge of clock.
The K7N803601B and K7N801801B are implemented with
SAMSUNG
s high performance CMOS technology and is avail-
able in 100pin TQFP and Multiple power and ground pins mini-
mize ground bounce.
GENERAL DESCRIPTION
FEATURES
LOGIC BLOCK DIAGRAM
3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data
contention .
interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.
100-TQFP-1420A
Operating in commercial and industrial temperature range.
FAST ACCESS TIMES
PARAMETER
Symbol
-16
-13
Unit
Cycle Time
t
CYC
6.0
7.5
ns
Clock Access Time
t
CD
3.5
4.2
ns
Output Enable Access Time
t
OE
3.5
3.8
ns
WE
BW
x
CLK
CKE
CS
1
CS
2
CS
2
ADV
OE
ZZ
DQa
0
~ DQd
7
or DQa0 ~ DQb8
ADDRESS
ADDRESS
REGISTER
C
O
NT
RO
L
L
OGI
C
A
0
~A
1
36 or 18
DQPa ~ DQPd
OUTPUT
BUFFER
REGISTER
DATA-IN
REGISTER
DATA-IN
REGISTER
K
K
K
REGISTER
BURST
ADDRESS
COUNTER
WRITE
ADDRESS
REGISTER
WRITE
CONTROL
LOGIC
CO
N
T
RO
L
RE
GIS
T
ER
K
A [0:17] or
LBO
A
2
~A
17
or A2~A18
A
0
~A
1
(x=a,b,c,d or a,b)
256Kx36 , 512Kx18
MEMORY
ARRAY
NtRAM
TM
and No Turnaround Random Access Memory are trademarks of Samsung,
and its architecture and functionalities are supported by NEC and Toshiba.
A [0:18]
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 4 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
V
DD
V
DD
V
DD
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
DQPd
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
V
DD
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A
6
A
7
CS
1
CS
2
BW
d
BW
c
BW
b
BW
a
CS
2
V
DD
V
SS
CLK
WE
CKE
OE
ADV
N.C
.
A
17
A
8
81
A
9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A
16
A
15
A
14
A
13
A
12
A
11
A
10
N.C
.
N.C
.
V
DD
V
SS
N.C
.
N.C
.
A
0
A
1
A
2
A
3
A
4
A
5
31
LBO
PIN NAME
Notes : 1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A
0
- A
17
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b,c,d)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
V
DDQ
V
SSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Output Power Supply
(3.3V or 2.5V)
Output Ground
14,15,16,41,65,66,91
17,40,67,90
38,39,42,43,84
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
K7N803601B(256Kx36)
K7N803201B(256Kx32)
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 5 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
DD
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
DD
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
A
6
A
7
CS
1
CS
2
BW
b
BW
a
CS
2
V
DD
V
SS
CLK
WE
CKE
OE
ADV
N.C
.
A
18
A
8
81
A
9
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
A
17
A
16
A
15
A
14
A
13
A
12
A
11
N.C
.
N.C
.
V
DD
V
SS
N.C
.
N.C
.
A
0
A
1
A
2
A
3
A
4
A
5
31
LBO
K7N801801B(512Kx18)
N.C
.
N.C.
PIN NAME
Notes : 1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A
0
- A
18
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,99,100
85
88
89
87
98
97
92
93,94
86
64
31
V
DD
V
SS
N.C.
DQa
0
~a
8
DQb
0
~b
8
V
DDQ
V
SSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Output Power Supply
(3.3V or 2.5V)
Output Ground
14,15,16,41,65,66,91
17,40,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,84,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 6 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
FUNCTION DESCRIPTION
The K7N803601B and K7N801801B is NtRAM
TM
designed to sustain 100% bus bandwidth by eliminating turnaround cycle when
there is transition from Read to Write, or vice versa.
All inputs (with the exception of OE, LBO and ZZ) are synchronized to rising clock edges.
All read, write and deselect cycles are initiated by the ADV input. Subsequent burst addresses can be internally generated by the
burst advance pin (ADV). ADV should be driven to Low once the device has been deselected in order to load a new address for next
operation.
Clock Enable(CKE) pin allows the operation of the chip to be suspended as long as necessary. When CKE is high, all synchronous
inputs are ignored and the internal device registers will hold their previous values.
NtRAM
TM
latches external address and initiates a cycle, when CKE, ADV are driven to low and all three chip enables(CS
1
, CS
2
, CS
2
)
are active .
Output Enable(OE) can be used to disable the output at any given time.
Read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the
address register, CKE is driven low, all three chip enables(CS
1
, CS
2
, CS
2
) are active, the write enable input signals WE are driven
high, and ADV driven low.The internal array is read between the first rising edge and the second rising edge of the clock and the data
is latched in the output register. At the second clock edge the data is driven out of the SRAM. Also during read operation OE must
be driven low for the device to drive out the requested data.
Write operation occurs when WE is driven low at the rising edge of the clock. BW[d:a] can be used for byte write operation. The pipe-
lined NtRAM
TM
uses a late-late write cycle to utilize 100% of the bandwidth.
At the first rising edge of the clock, WE and address are registered, and the data associated with that address is required two cycle
later.
Subsequent addresses are generated by ADV High for the burst access as shown below. The starting point of the burst seguence is
provided by the external address. The burst address counter wraps around to its initial state upon completion.
The burst sequence is determined by the state of the LBO pin. When this pin is low, linear burst sequence is selected.
And when this pin is high, Interleaved burst sequence is selected.
During normal operation, ZZ must be driven low. When ZZ is driven high, the SRAM will enter a Power Sleep Mode after 2 cycles. At
this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM normally operates after 2 cycles of wake up
time.
BURST SEQUENCE TABLE
(Interleaved Burst, LBO=High)
LBO PIN
HIGH
Case 1
Case 2
Case 3
Case 4
A
1
A
0
A
1
A
0
A
1
A
0
A
1
A
0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
0
1
1
1
0
1
0
1
1
0
0
0
1
0
1
1
1
0
0
1
0
1
0
BQ TABLE
(Linear Burst, LBO=Low)
Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed
.
LBO PIN
LOW
Case 1
Case 2
Case 3
Case 4
A
1
A
0
A
1
A
0
A
1
A
0
A
1
A
0
First Address
Fourth Address
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 7 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
STATE DIAGRAM FOR NtRAM
TM
BEGIN
WRITE
BURST
WRITE
BEGIN
READ
WRITE
DS
REA
D
BURST
READ
DS
WR
ITE
DS
READ
DS
RE
AD
DS
WRITE
BURST
DESELECT
B
U
R
ST
R
EA
D
BU
R
S
T
W
R
IT
E
READ
WRITE
BURST
BURST
Notes : 1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
COMMAND
ACTION
DS
DESELECT
READ
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 8 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
SYNCHRONOUS TRUTH TABLE
Notes : 1. X means "Don
t Care". 2. The rising edge of clock is symbolized by ().
3. A continue deselect cycle can only be enterd if a deselect cycle is executed first.
4. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
5. Operation finally depends on status of asynchronous input pins(ZZ and OE).
CS
1
CS
2
CS
2
ADV
WE
BWx
OE
CKE
CLK
ADDRESS ACCESSED
OPERATION
H
X
X
L
X
X
X
L
N/A
Not Selected
X
L
X
L
X
X
X
L
N/A
Not Selected
X
X
H
L
X
X
X
L
N/A
Not Selected
X
X
X
H
X
X
X
L
N/A
Not Selected Continue
L
H
L
L
H
X
L
L
External Address
Begin Burst Read Cycle
X
X
X
H
X
X
L
L
Next Address
Continue Burst Read Cycle
L
H
L
L
H
X
H
L
External Address
NOP/Dummy Read
X
X
X
H
X
X
H
L
Next Address
Dummy Read
L
H
L
L
L
L
X
L
External Address
Begin Burst Write Cycle
X
X
X
H
X
L
X
L
Next Address
Continue Burst Write Cycle
L
H
L
L
L
H
X
L
N/A
NOP/Write Abort
X
X
X
H
X
H
X
L
Next Address
Write Abort
X
X
X
X
X
X
X
H
Current Address
Ignore Clock
WRITE TRUTH TABLE
(x36)
Notes : 1. X means "Don
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(
).
WE
BWa
BWb
BWc
BWd
OPERATION
H
X
X
X
X
READ
L
L
H
H
H
WRITE BYTE a
L
H
L
H
H
WRITE BYTE b
L
H
H
L
H
WRITE BYTE c
L
H
H
H
L
WRITE BYTE d
L
L
L
L
L
WRITE ALL BYTEs
L
H
H
H
H
WRITE ABORT/NOP
TRUTH TABLES
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 9 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
OPERATING CONDITIONS at 3.3V I/O
(0
C T
A
70C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
CAPACITANCE*
(T
A
=25
C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
OPERATING CONDITIONS at 2.5V I/O
(0
C T
A
70C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.465
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
C
Operating Temperature
Commercial
T
OPR
0 to 70
C
Industrial
T
OPR
-40 to 85
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
C
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 10 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
C to +70C)
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
A
Operating Current
I
CC
Device Selected , I
OUT
=0mA,
ZZ
V
IL ,
Cycle Time
t
CYC
Min
-16 -
350
mA
1,2
-13
-
300
Standby Current
I
SB
Device deselected, I
OUT
=0mA, ZZ
V
IL
,
f=Max, All Inputs
0.2V or V
DD
-0.2V
-16 -
130
mA
-13
-
120
I
SB1
Device deselected, I
OUT
=0mA, ZZ
0.2V, f=0
,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
100
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
V
DD
-0.2V,
f=Max, All Inputs
V
IL
or
V
IH
-
60
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
C)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Value
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 11 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
AC TIMING CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0 to 70
C)
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
3. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
4. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
5. To avoid bus contention, At a given voltage and temperature t
LZC
is more than t
HZC.
The specs as shown do not imply bus contention because t
LZC
is a Min. parameter that is worst case at totally different test conditions
(0
C,3.465V) than t
HZC
, which is a Max. parameter(worst case at 70
C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
PARAMETER
SYMBOL
-16
-13
UNIT
MIN
MAX
MIN
MAX
Cycle Time
t
CYC
6.0
-
7.5
-
ns
Clock Access Time
t
CD
-
3.5
-
4.2
ns
Output Enable to Data Valid
t
OE
-
3.5
-
4.2
ns
Clock High to Output Low-Z
t
LZC
1.5
-
1.5
-
ns
Output Hold from Clock High
t
OH
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
t
LZOE
0
-
0
-
ns
Output Enable High to Output High-Z
t
HZOE
-
3.0
-
3.5
ns
Clock High to Output High-Z
t
HZC
-
3.0
-
3.5
ns
Clock High Pulse Width
t
CH
2.2
-
3.0
-
ns
Clock Low Pulse Width
t
CL
2.2
-
3.0
-
ns
Address Setup to Clock High
t
AS
1.5
-
1.5
-
ns
CKE Setup to Clock High
t
CES
1.5
-
1.5
-
ns
Data Setup to Clock High
t
DS
1.5
-
1.5
-
ns
Write Setup to Clock High (WE, BW
X
)
t
WS
1.5
-
1.5
-
ns
Address Advance Setup to Clock High
t
ADVS
1.5
-
1.5
-
ns
Chip Select Setup to Clock High
t
CSS
1.5
-
1.5
-
ns
Address Hold from Clock High
t
AH
0.5
-
0.5
-
ns
CKE Hold from Clock High
t
CEH
0.5
-
0.5
-
ns
Data Hold from Clock High
t
DH
0.5
-
0.5
-
ns
Write Hold from Clock High (WE, BWE
X
)
t
WH
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
t
ADVH
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
t
CSH
0.5
-
0.5
-
ns
ZZ High to Power Down
t
PDS
2
-
2
-
cycle
ZZ Low to Power Up
t
PUS
2
-
2
-
cycle
Output Load(B),
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
353
/ 1538
5pF*
+3.3V for 3.3V I/O
319
/ 1667
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50
RL=50
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
/+2.5V for 2.5V I/O
30pF*
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 12 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to I
SB2
. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, I
SB2
is guaranteed after the time t
ZZI
is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pend-
ing operations are completed. similarly, when exiting SLEEP MODE during t
PUS
, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
Current during SLEEP MODE
ZZ
V
IH
I
SB2
60
mA
ZZ active to input ignored
t
PDS
2
cycle
ZZ inactive to input sampled
t
PUS
2
cycle
ZZ active to SLEEP current
t
ZZI
2
cycle
ZZ inactive to exit SLEEP current
t
RZZI
0
K
t
PDS
ZZ setup cycle
t
RZZI
ZZ
Isupply
All inputs
(except ZZ)
Outputs
(Q)
t
ZZI
t
PUS
ZZ recovery cycle
Deselect or Read Only
High-Z
DON
T CARE
I
SB2
SLEEP MODE WAVEFORM
Normal
operation
cycle
Deselect or Read Only
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 13 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
Cl
oc
k
CKE
Ad
dr
ess
WRIT
E
CS
ADV
OE
Da
ta Out
TIMING
WAV
E
FORM OF REA
D
CYCLE
NO
TE
S :
W
R
IT
E
= L mean
s WE
=
L
,
and
B
W
x =
L
CS
=
L m
e
an
s C
S
1
=
L
,
CS
2
=
H and CS
2
=
L
CS
=
H mean
s
CS
1
= H, o
r
CS
1
= L
a
nd CS
2
= H, or
CS
1
= L, an
d
CS
2
= L
t
CH
t
CL
t
CE
S
t
CE
H
t
AS
t
AH
A1
A
2
A3
t
WS
t
WH
t
CS
S
t
CS
H
t
OE
t
HZOE
t
LZ
OE
t
CD
t
OH
t
HZC
Q3-
4
Q3-3
Q3-2
Q3-
1
Q2-
4
Q2
-3
Q2-
2
Q2-1
Q1-
1
Do
n
t Ca
re
Un
def
ined
t
CY
C
t
AD
V
S
t
ADV
H
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 14 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
TIMING WAVEFOR
M OF WRTE CY
CLE
Cl
oc
k
A
d
d
r
ess
WRIT
E
CS
AD
V
Da
ta
I
n
t
CH
t
CL
A2
A
3
D2-
1
D1-1
D2
-
2
D2-
3
D2-
4
D3-1
D3
-2
D3-3
OE
Da
ta
O
u
t
t
DS
t
DH
Don
t Care
Und
e
fi
ned
t
CYC
CK
E
A1
D3-4
t
CE
S
t
CE
H
NOTE
S :
WRITE
=
L m
e
an
s W
E
=
L,
an
d
BW
x =
L
CS
= L means CS
1
=
L, CS
2
=
H and
CS
2
= L
CS
=
H mea
n
s CS
1
=
H, or CS
1
= L and CS
2
= H, o
r
CS
1
= L,
a
nd CS
2
=
L
Q0
-4
t
HZOE
Q0-
3
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 15 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
TIMIN
G
WAVEFORM OF SINGLE REA
D
/WRITE
Cl
oc
k
Ad
dr
e
s
s
WRIT
E
CS
AD
V
OE
Da
ta
I
n
t
CH
t
CL
t
DS
t
DH
Da
ta
O
u
t
A2
A4
A5
D2
t
OE
t
LZ
OE
Q1
Do
n
t Car
e
U
n
def
ined
t
CY
C
CK
E
t
CE
S
t
CE
H
A1
A3
A7
A6
Q3
Q4
Q7
Q6
D5
NOT
E
S :
WRI
T
E
=
L m
e
an
s W
E
= L,
an
d BW
x =
L
CS
= L means CS
1
=
L, CS
2
=
H and
CS
2
= L
CS
=
H mea
n
s CS
1
=
H, or CS
1
= L and CS
2
= H, o
r
CS
1
= L,
a
nd CS
2
=
L
A9
A8
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 16 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
TIMIN
G
WAVEFO
R
M O
F
CKE
OP
ERATION
Cl
oc
k
Addres
s
WR
IT
E
CS
ADV
OE
Data In
t
CH
t
CL
Da
ta Out
A1
A2
A3
A4
A5
t
CES
t
CE
H
Don
t Ca
r
e
Undef
ine
d
t
CY
C
CKE
t
DS
t
DH
D2
Q4
Q1
NO
TE
S :
W
R
IT
E
= L mean
s WE
=
L
,
and
B
W
x =
L
CS
=
L m
e
an
s C
S
1
= L, CS
2
=
H and CS
2
=
L
CS
=
H mean
s
CS
1
= H, o
r
CS
1
= L
a
nd CS
2
= H, or
CS
1
= L, an
d
CS
2
= L
t
CD
t
LZ
C
t
HZC
Q3
A6
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 17 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
TIMI
NG
WAVEFORM
OF CS
OPE
RATION
Cl
oc
k
Addres
s
WR
IT
E
CS
ADV
OE
Data In
t
CH
t
CL
Da
ta Out
A1
A2
A3
A4
A5
Don
t Ca
r
e
Undef
ine
d
t
CY
C
CKE
D5
Q4
t
CE
S
t
CEH
Q1
Q2
t
OE
t
LZ
O
E
D3
t
CD
t
LZC
NO
TE
S :
W
R
IT
E
= L mean
s WE
=
L
,
and
B
W
x =
L
CS
=
L m
e
an
s C
S
1
= L, CS
2
=
H and CS
2
=
L
CS
=
H mean
s
CS
1
= H, o
r
CS
1
= L
a
nd CS
2
= H, or
CS
1
= L, an
d
CS
2
= L
t
HZC
t
DH
t
DS
256Kx36 & 512Kx18 Pipelined NtRAM
TM
- 18 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
PACKAGE DIMENSIONS
0.10 MAX
0~8
22.00
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