FLASH MEMORY

K9F1208D0A

K9F1208U0A

K9F1216D0A

K9F1216U0A

Document Title

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Remark

Preliminary

History

Initial issue.

TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm
(after ) To Be Decided.

TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to
(after) 8.5 x 15 /0.8mm pitch, Width 1.0mm

Pin numbering includes TBGA Dummy ball . (Page5)

Pin numbering excludes TBGA Dummy ball . (Page5)
Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 43)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 44)

The min. Vcc value 1.8V devices is changed.
K9F1208Q0A : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.
K9F1208U0A-FCB0,FIB0
K9F1208Q0A-HCB0,HIB0
K9F1216U0A-HCB0,HIB0
K9F1216U0A-PCB0,PIB0
K9F1216Q0A-HCB0,HIB0
K9F1208U0A-HCB0,HIB0
K9F1208U0A-PCB0,PIB0

Errata is added.(Front Page)-K9F1208Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification 45 15 25 50 15 25 30 45

Relaxed value 60 20 40 60 20 40 40 55

New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)

1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)

Draft Date

Apr. 25th 2002

May. 9th 2002

July, 10th 2002

Aug, 10th 2002

Oct, 21th 2002

Nov, 21th 2002

Mar. 5th 2003

Mar. 13rd 2003

Mar. 17th 2003

Apr. 4th 2003

Jul. 4th 2003

Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

FLASH MEMORY

K9F1208D0A

K9F1208U0A

K9F1216D0A

K9F1216U0A

Document Title

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.

Revision No.

1.1

1.2

1.3

1.4

Remark

History

Errata is deleted.
AC parameters are changed.-K9F1208Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45

After 60 20 40 60 20 40 40 55

1. K9F1208Q0A-DC(I)B0,K9F1216Q0A-DC(I)B0, K9F1208D0A-DC(I)B0,
K9F1216D0A-DC(I)B0,K9F1208U0A-DC(I)B0, K9F1216U0A-DC(I)B0 are
deleted.

1. Add the Protrusion/Burr value in WSOP1

PKG Diagram

1. PKG(TSOP1, WSOP1) Dimension Change

Draft Date

Aug. 1st 2003

Oct. 14th 2003

Apr. 24th 2004

May. 24th 2004

Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

FLASH MEMORY

K9F1208D0A

K9F1208U0A

K9F1216D0A

K9F1216U0A

GENERAL DESCRIPTION

FEATURES

Voltage Supply

- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V

Organization

- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit

Automatic Program and Erase

- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word

Page Read Operation

- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12

s(Max.)

- Serial Page Access : 50ns(Min.)

64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

Fast Write Cycle Time

- Program time : 200

s(Typ.)

- Block Erase Time : 2ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years

Command Register Operation

Intelligent Copy-Back

Unique ID for Copyright Protection

Package

- K9F12XXX0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.

Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200

s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in

typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-
chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A

s extended reliability of 100K program/

erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9F1208D0A-Y,P

2.4 ~ 2.9V

TSOP1

K9F1216D0A-Y,P

X16

TSOP1

K9F1208U0A-Y,P

2.7 ~ 3.6V

TSOP1

K9F1208U0A-V,F

WSOP1

K9F1216U0A-Y,P

X16

TSOP1

FLASH MEMORY

K9F1208D0A

K9F1208U0A

K9F1216D0A

K9F1216U0A

PIN CONFIGURATION (TSOP1)

K9F12XXU0A-YCB0,PCB0/YIB0,PIB0

N.C

R/B

N.C

Vcc

Vss

N.C

CLE

ALE

N.C

Vss

I/O15

I/O7

I/O14

I/O6

I/O13

I/O5

I/O12

I/O4

N.C

Vcc

N.C

I/O11

I/O3

I/O10

I/O2

I/O9

I/O1

I/O8

I/O0

Vss

N.C

R/B

N.C

Vcc

Vss

N.C

CLE

ALE

N.C

I/O7

I/O6

I/O5

I/O4

N.C

Vcc

Vss

N.C

I/O3

I/O2

I/O1

I/O0

N.C

X16

PACKAGE DIMENSIONS

48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)

48 - TSOP1 - 1220F

Unit :mm/Inch

0.787

0.008

20.00

0.20

#24

0
.
1
6

.
0

-
0

.
0

.
0
0

.
0

-
0

.
0

.
5
0

0
.
0

1
9

#48

#25

0
.
4

8
8

1
2

.
4
0

2
.
0

.
4
7

0
.
1

.
0
0

0
.
2
5

0
.
0

1
0

(

)

0.039

0.002

1.00

0.05

0.002

0.05

MIN

0.047

1.20

MAX

0.45~0.75

0.018~0.030

0.724

0.004

18.40

0.10

0~8

.
0
1

0
.
2

0
.
1
2
5

.
0

.
0
0
5

.
0

-
0

.
0

0.50

0.020

(

)

0
.
2
0

.
0

-
0

.
0

FLASH MEMORY

K9F1208D0A

K9F1208U0A

K9F1216D0A

K9F1216U0A

PIN CONFIGURATION (WSOP1)

K9F1208U0A-VCB0,FCB0/VIB0,FIB0

N.C

DNU

N.C

R/B

DNU

N.C

Vcc

Vss

N.C

DNU

CLE

ALE

N.C

DNU

N.C

DNU

N.C

I/O7

I/O6

I/O5

I/O4

N.C

DNU

N.C

Vcc

Vss

N.C

DNU

N.C

I/O3

I/O2

I/O1

I/O0

N.C

DNU

N.C

PACKAGE DIMENSIONS

48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)

48 - WSOP1 - 1217F

Unit :mm

15.40

0.10

#24

0
.
2
0

.
0

-
0

.
0

0
.
1
6

.
0

-
0

.
0

0
.
5

0
T

(
0

.
5
0

.
0
6

)

#48

#25

0
.
1

.
0

-
0

.
0

17.00

0.20

0.45~0.75

1
2

.
0
0

.
1

0.58

0.04

0.70 MAX

(0.01Min)

1
2

.
4
0

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