FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

0.1

0.2

0.3

0.4

Remark

Advance

History

Initial issue.

At Read2 operation in X16 device
: A

~ A

are Don't care ==> A

~ A

are "L"

1. I

(R/B) of 1.8V device is changed.

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

3. WP pin provides hardware protection and is recommended to be kept

at V

during power-up and power-down and recovery time of minimum

s is required before internal circuit gets ready for any command

sequences as shown in Figure 15.

---> WP pin provides hardware protection and is recommended to be

kept at V

during power-up and power-down and recovery time of

minimum 10

s is required before internal circuit gets ready for any

command sequences as shown in Figure 15.

1. X16 TSOP1 pin is changed.
: #36 pin is changed from VccQ to N.C .

1. In X16 device, bad block information location is changed from 256th
byte to 256th and 261th byte.
2. tAR1, tAR2 are merged to tAR.(page 12)
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns
(after revision) min. tAR = 10ns
3. min. tCLR is changed from 50ns to 10ns.(page12)
4. min. tREA is changed from 35ns to 30ns.(page12)
5. min. tWC is changed from 50ns to 45ns.(page12)
6. Unique ID for Copyright Protection is available
-The device includes one block sized OTP(One Time Programmable),
which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by
contact with Samsung.
7. tRHZ is divide into tRHZ and tOH.(page 12)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
8. tCHZ is divide into tCHZ and tOH.(page 12)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold

Draft Date

May. 15th 2001

Sep. 20th 2001

Nov. 5th 2001

Feb. 15th 2002

Apr. 15th 2002

Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.5

0.6

0.7

0.8

0.9

Remark

History

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 33)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 34)

The min. Vcc value 1.8V devices is changed.
K9F56XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.
K9F5608U0B-FCB0,FIB0
K9F5608Q0B-HCB0,HIB0
K9F5616U0B-HCB0,HIB0
K9F5616U0B-PCB0,PIB0
K9F5616Q0B-HCB0,HIB0
K9F5608U0B-HCB0,HIB0
K9F5608U0B-PCB0,PIB0

New definition of the number of invalid blocks is added.
(

Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb

memory space.

)

Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss

Draft Date

Nov. 22.2002

Mar. 6.2003

Mar. 13rd 2003

Apr. 4th 2003

May. 24th 2003

Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

GENERAL DESCRIPTION

FEATURES

Voltage Supply

- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V

Organization

- Memory Cell Array
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit

Automatic Program and Erase

- Page Program
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word

Page Read Operation

- Page Size
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Random Access : 10

s(Max.)

- Serial Page Access : 50ns(Min.)

32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

Fast Write Cycle Time

- Program time : 200

s(Typ.)

- Block Erase Time : 2ms(Typ.)

Command/Address/Data Multiplexed I/O Port

Hardware Data Protection

- Program/Erase Lockout During Power Transitions

Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years

Command Register Operation

Intelligent Copy-Back

Unique ID for Copyright Protection

Package

- K9F56XXU0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200

s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in

typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F56XXX0B

s extended reliability of 100K program/erase cycles by providing

ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9F5608Q0B-D,H

1.70 ~ 1.95V

TBGA

K9F5616Q0B-D,H

X16

K9F5608U0B-Y,P

2.7 ~ 3.6V

TSOP1

K9F5608U0B-D,H

TBGA

K9F5608U0B-V,F

WSOP1

K9F5616U0B-Y,P

X16

TSOP1

K9F5616U0B-D,H

TBGA

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PIN CONFIGURATION (TSOP1)

K9F56XXU0B-YCB0,PCB0/YIB0,PIB0

N.C

GND

R/B

N.C

Vcc

Vss

N.C

CLE

ALE

N.C

Vss

I/O15

I/O7

I/O14

I/O6

I/O13

I/O5

I/O12

I/O4

N.C

Vcc

N.C

I/O11

I/O3

I/O10

I/O2

I/O9

I/O1

I/O8

I/O0

Vss

N.C

GND

R/B

N.C

Vcc

Vss

N.C

CLE

ALE

N.C

I/O7

I/O6

I/O5

I/O4

N.C

Vcc

Vss

N.C

I/O3

I/O2

I/O1

I/O0

N.C

X16

PACKAGE DIMENSIONS

48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)

48 - TSOP1 - 1220F

Unit :mm/Inch

0.787

0.008

20.00

0.20

#24

0
.
2

.
0

-
0

.
0

0
.
0

0
8

.
0

-
0

.
0

0
.
5

.
0
1

9
7

#48

#25

.
4
8

2
.
4

1
2

.
0
0

0
.
4

7
2

0
.
1
0

0
.
0

0
4

.
2
5

.
0
1

(

)

0.039

0.002

1.00

0.05

0.002

0.05

MIN

0.047

1.20

MAX

0.45~0.75

0.018~0.030

0.724

0.004

18.40

0.10

0~8

¡Æ

0
.
0

1
0

0
.
2
5

.
1
2

.
0

0
.
0
0

.
0

-
0

.
0

0.50

0.020

(

)

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

K9F56XXX0B-DCB0,HCB0/DIB0,HIB0

R/B

/WE

/CE

Vss

ALE

/WP

/RE

CLE

NC Vcc

NC I/O0

I/O1

NC VccQ I/O5 I/O7

Vss

I/O6

I/O4

I/O3

I/O2

Vss

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

DNU DNU

DNU

R/B

/WE

/CE

Vss

ALE

/WP

/RE

CLE

I/O7

I/O5

I/O12 IO14

Vcc

I/O10

I/O8 I/O1

I/O9

I/O0

I/O3 VccQ I/O6 I/O15

Vss

I/O13

I/O4

I/O11

I/O2

Vss

X16

PIN CONFIGURATION (TBGA)

(Top View)

63-Ball TBGA (measured in millimeters)

PACKAGE DIMENSIONS

9.00

0.10

#A1

Side View

Top View

.
9

.
1

0.45

0.05

Bottom View

.
0

.
1

63-

0.45

0.05

.
8

x
7

.
6

.
0

.
1
0

0.80 x5= 4.00

0.80

.
3

.
0

0.08MAX

.
8

2.00

9.00

0.10

(Datum B)

(Datum A)

0.20

A B

.
8

x
1

.
8

0.80 x9= 7.20

9.00

0.10

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PIN CONFIGURATION (WSOP1)

K9F5608U0B-VCB0,FCB0/VIB0,FIB0

PACKAGE DIMENSIONS

48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)

48 - WSOP1 - 1217F

Unit :mm

15.40

0.10

#24

.
2
0

.
0

-
0

.
0

.
1
6

.
0

-
0

.
0

0
.
5

0
T

(
0

.
5
0

0
.
0
6

)

#48

#25

1
2
.
0
0

.
1

0
.
1
0

.
0

-
0

.
0

0.58

0.04

0.70 MAX

(0.1Min)

17.00

0.20

0.45~0.75

N.C

DNU

N.C

R/B

DNU

N.C

Vcc

Vss

N.C

DNU

CLE

ALE

N.C

DNU

N.C

DNU

N.C

I/O7

I/O6

I/O5

I/O4

N.C

DNU

N.C

Vcc

Vss

N.C

DNU

N.C

I/O3

I/O2

I/O1

I/O0

N.C

DNU

N.C

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PIN DESCRIPTION

Pin Name

Pin Function

I/O

~ I/O

(K9F5608X0B)

I/O

~ I/O

(K9F5616X0B)

DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.

CLE

COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.

ALE

ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.

CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to 'Page read' section of Device operation.

READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.

WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.

WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.

R/B

READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.

VccQ

OUTPUT BUFFER POWER
V

Q is the power supply for Output Buffer.

VccQ is internally connected to Vcc, thus should be biased to Vcc.

Vcc

POWER
V

is the power supply for device.

Vss

GROUND

N.C

NO CONNECTION
Lead is not internally connected.

GND

GND INPUT FOR ENABLING SPARE AREA
To do sequential read mode including spare area , connect this input pin to Vss or set to static low state
or to do sequential read mode excluding spare area , connect this input pin to Vcc or set to static high state.

DNU

DO NOT USE
Leave it disconnected.

NOTE : Connect all V

and V

pins of each device to common power supply outputs.

Do not leave V

or V

disconnected.

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

512Byte

16 Byte

Figure 1-1. K9F5608X0B (X8) FUNCTIONAL BLOCK DIAGRAM

Figure 2-1. K9F5608X0B (X8) ARRAY ORGANIZATION

NOTE : Column Address : Starting Address of the Register.

00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A

is set to "Low" or "High" by the 00h or 01h Command.

* The device ignores any additional input of address cycles than reguired.

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

1st Cycle

2nd Cycle

3rd Cycle

X-Buffers

256M + 8M Bit

Command

NAND Flash

ARRAY

(512 + 16)Byte x 65536

Y-Gating

Page Register & S/A

I/O Buffers & Latches

Latches

& Decoders

Y-Buffers

Latches

& Decoders

Register

Control Logic

& High Voltage

Generator

Global Buffers

Output

Driver

- A

Command

CE
RE
WE

I/0 0

I/0 7

CC/

CCQ

1st half Page Register
(=256 Bytes)

2nd half Page Register
(=256 Bytes)

64K Pages
(=2,048 Blocks)

512 Byte

8 bit

16 Byte

1 Block =32 Pages
= (16K + 512) Byte

I/O 0 ~ I/O 7

1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 2048 Blocks
= 264 Mbits

Column Address
Row Address
(Page Address)

Page Register

CLE ALE

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

256Word

8 Word

Figure 2-2. K9F5616X0B (X16) ARRAY ORGANIZATION

NOTE : Column Address : Starting Address of the Register.

* L must be set to "Low".

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O8 to 15

1st Cycle

2nd Cycle

3rd Cycle

Page Register
(=256 Words)

64K Pages
(=2,048 Blocks)

256 Word

16 bit

8 Word

1 Block =32 Pages
= (8K + 256) Word

I/O 0 ~ I/O 15

1 Page = 264 Word
1 Block = 264 Word x 32 Pages
= (8K + 256) Word
1 Device = 264Words x 32Pages x 2048 Blocks
= 264 Mbits

Column Address
Row Address
(Page Address)

Page Register

Figure 1-2. K9F5616X0B (X16) FUNCTIONAL BLOCK DIAGRAM

X-Buffers

256M + 8M Bit

Command

NAND Flash

ARRAY

(256 + 8)Word x 65536

Y-Gating

Page Register & S/A

I/O Buffers & Latches

Latches

& Decoders

Y-Buffers

Latches

& Decoders

Register

Control Logic

& High Voltage

Generator

Global Buffers

Output

Driver

- A

Command

CE
RE
WE

I/0 0

I/0 15

CC/

CCQ

CLE ALE

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PRODUCT INTRODUCTION

The K9F56XXX0B is a 264Mbit(276,824,064 bit) memory organized as 65,536 rows(pages) by 528(X8 device) or 264(X16 device)
columns. Spare eight columns are located from column address of 512~527(X8 device) or 256~263(X16 device). A 528-byte(X8
device) or 264-word(X16 device) data register is connected to memory cell arrays accommodating data transfer between the I/O
buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially con-
nected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two NAND structures. A NAND
structure consists of 16 cells. Total 16896 NAND cells reside in a block. The array organization is shown in Figure 2-1,2-2. The pro-
gram and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array
consists of 2048 separately erasable 16K-Byte(X8 device) or 8K-Word(X16 device) blocks. It indicates that the bit by bit erase oper-
ation is prohibited on the K9F56XXX0B.
The K9F56XXX0B has addresses multiplexed into 8 I/Os(X16 device case: lower 8 I/Os). K9F5616X0B allows sixteen bit wide data
transport into and out of page registers. This scheme dramatically reduces pin counts while providing high performance and allows
systems upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written
through I/O

s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and

Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one
bus cycle. For example, Reset command, Read command, Status Read command, etc require just one cycle bus. Some other com-
mands like Page Program and Copy-back Program and Block Erase, require two cycles: one cycle for setup and the other cycle for
execution. The 32M-byte(X8 device) or 16M-word(X16 device) physical space requires 24 addresses, thereby requiring three cycles
for word-level addressing: column address, low row address and high row address, in that order. Page Read and Page Program
need the same three address cycles following the required command input. In Block Erase operation, however, only the two row
address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines
the specific commands of the K9F56XXX0B.

The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.

Table 1. COMMAND SETS

NOTE : 1. The 01h command is available only on X8 device(K9F5608X0B).

Caution : Any undefined command inputs are prohibited except for above command set of Table 1.

Function

1st. Cycle

2nd. Cycle

Acceptable Command during Busy

00h/01h

(1)

50h

Read ID

90h

Reset

FFh

Page Program

80h

10h

Copy-Back Program

00h

8Ah

Block Erase

60h

D0h

Read Status

70h

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

DC AND OPERATING CHARACTERISTICS

(Recommended operating conditions otherwise noted.)

Parameter

Symbol

Test Conditions

K9F56XXQ0B(1.8V)

K9F56XXU0B(3.3V)

Unit

Min

Typ

Max

Min

Typ

Max

Operat-

ing

Current

Sequential Read

tRC=50ns, CE=V

OUT

=0mA

Program

Erase

Stand-by Current(TTL)

CE=V

, WP=0V/V

Stand-by Current(CMOS)

CE=V

-0.2, WP=0V/V

Input Leakage Current

=0 to Vcc(max)

Output Leakage Current

OUT

=0 to Vcc(max)

Input High Voltage

I/O pins

CCQ

-0.4

CCQ

+0.3

2.0

CCQ

+0.3

Except I/O pins

-0.4

+0.3

2.0

+0.3

Input Low Voltage, All inputs

-0.3

0.4

-0.3

0.8

Output High Voltage Level

K9F56XXQ0B :I

=-100

K9F56XXU0B :I

=-400

Q-0.1

2.4

Output Low Voltage Level

K9F56XXQ0B :I

=100uA

K9F56XXU0B :I

=2.1mA

0.1

0.4

Output Low Current(R/B)

(R/B)

K9F56XXQ0B :V

=0.1V

K9F56XXU0B :V

=0.4V

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F56XXX0B-XCB0

=0 to 70

C, K9F56XXX0B-XIB0

=-40 to 85

Parameter

Symbol

K9F56XXQ0B(1.8V)

K9F56XXU0B(3.3V)

Unit

Min

Typ.

Max

Min

Typ.

Max

Supply Voltage

1.70

1.8

1.95

2.7

3.3

3.6

Supply Voltage

CCQ

1.70

1.8

1.95

2.7

3.3

3.6

Supply Voltage

ABSOLUTE MAXIMUM RATINGS

NOTE:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V

CC,

+0.3V which, during transitions, may overshoot to V

+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

K9F56XXQ0B(1.8V)

K9F56XXU0B(3.3V)

Voltage on any pin relative to V

IN/OUT

-0.6 to + 2.45

-0.6 to + 4.6

-0.2 to + 2.45

-0.6 to + 4.6

CCQ

-0.2 to + 2.45

-0.6 to + 4.6

Temperature Under Bias

K9F56XXX0B-XCB0

BIAS

-10 to +125

K9F56XXX0B-XIB0

-40 to +125

Storage Temperature

K9F56XXX0B-XCB0

STG

-65 to +150

K9F56XXX0B-XIB0

Short Circuit Current

Ios

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

CAPACITANCE

(

=25

C, V

=1.8V/3.3V, f=1.0MHz)

NOTE : Capacitance is periodically sampled and not 100% tested.

Item

Symbol

Test Condition

Min

Max

Unit

Input/Output Capacitance

I/O

=0V

Input Capacitance

=0V

VALID BLOCK

NOTE :
1. The

K9F56XXX0B

may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks

is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits

Do not erase or

program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.

2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3.

The number of initial bad blocks upon shipping does not exceed 20.

Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.

Parameter

Symbol

Min

Typ.

Max

Unit

Valid Block Number

2013

2048

Blocks

Program/Erase Characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Program Time

PROG

200

500

Number of Partial Program Cycles
in the Same Page

Main Array

Nop

cycles

Spare Array

cycles

Block Erase Time

BERS

AC TEST CONDITION

(K9F56XXX0B-XCB0 :TA=0 to 70

C, K9F56XXX0B-XIB0 :TA=-40 to 85

K9F56XXQ0B : Vcc=1.70V~1.95V , K9F56XXU0B : Vcc=2.7V~3.6V unless otherwise noted)

Parameter

K9F56XXQ0B

K9F56XXU0B

Input Pulse Levels

0V to VccQ

0.4V to 2.4V

Input Rise and Fall Times

5ns

Input and Output Timing Levels

VccQ/2

1.5V

K9F56XXQ0B:Output Load (VccQ:1.8V +/-10%)
K9F56XXU0B:Output Load (VccQ:3.0V +/-10%)

1 TTL GATE and CL=30pF

1 TTL GATE and CL=50pF

K9F56XXU0B:Output Load (VccQ:3.3V +/-10%)

1 TTL GATE and CL=100pF

MODE SELECTION

NOTE : 1. X can be V

or V

IH.

2. WP should be biased to CMOS high or CMOS low for standby.

CLE

ALE

GND

Mode

Read Mode

Command Input

Address Input(3clock)

Write Mode

Command Input

Address Input(3clock)

Data Input

Data Output

During Read(Busy) on K9F5608U0B_Y,P or K9F5608U0B_V,F

During Read(Busy) on the devices except K9F5608U0B_Y,P and
K9F5608U0B_V,F

During Program(Busy)

During Erase(Busy)

(1)

Write Protect

0V/V

(2)

Stand-by

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

AC Characteristics for Operation

NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.

Parameter

Symbol

Min

Max

Unit

Data Transfer from Cell to Register

ALE to RE Delay

CLE to RE Delay

CLR

Ready to RE Low

RE Pulse Width

WE High to Busy

100

Read Cycle Time

CE Access Time

CEA

RE Access Time

REA

RE High to Output Hi-Z

RHZ

CE High to Output Hi-Z

CHZ

RE or CE High to Output hold

RE High Hold Time

REH

Output Hi-Z to RE Low

WE High to RE Low

WHR

Device Resetting Time

(Read/Program/Erase)

RST

5/10/500

(1)

K9F5608U0B-
Y,P,V,F only

Last RE High to Busy(at sequential read)

100

CE High to Ready(in case of interception by CE at read)

CRY

50 +tr(R/B)

(3)

CE High Hold Time(at the last serial read)

(2)

CEH

100

AC Timing Characteristics for Command / Address / Data Input

NOTE :

1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.

Parameter

Symbol

Min

Max

Unit

CLE Set-up Time

CLS

CLE Hold Time

CLH

CE Setup Time

CE Hold Time

WE Pulse Width

(1)

ALE Setup Time

ALS

ALE Hold Time

ALH

Data Setup Time

Data Hold Time

Write Cycle Time

WE High Hold Time

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

NAND Flash Technical Notes

Identifying Invalid Block(s)

Invalid Block(s)

Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor-
mation regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the perfor-
mance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is fully guar-
anteed to be a valid block, does not require Error Correction.

All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 6th byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure that either the
1st or 2nd page of every invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column address of 517(X8
device) or 256 and 261(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover the
information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original
invalid block information and create the invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of
the original invalid block information is prohibited.

Check "FFh" at the column address

Figure 3. Flow chart to create invalid block table.

Start

Set Block Address = 0

Check "FFh" ?

Increment Block Address

Last Block ?

End

Yes

Create (or update)

Invalid Block(s) Table

of the 1st and 2nd page in the block

517(X8 device) or 256 and 261(X16 device)

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

NAND Flash Technical Notes (Continued)

Program Flow Chart

Start

I/O 6 = 1 ?

Write 00h

I/O 0 = 0 ?

If ECC is used, this verification

Write 80h

Write Address

Write Data

Write 10h

Read Status Register

Write Address

Wait for tR Time

Verify Data

Program Completed

or R/B = 1 ?

Program Error

Yes

Program Error

Yes

: If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

operation is not needed.

Error in write or read operation

Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. To improve the efficiency of
memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.

Failure Mode

Detection and Countermeasure sequence

Write

Erase Failure

Status Read after Erase --> Block Replacement

Program Failure

Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement

or ECC Correction

Read

Single Bit Failure

Verify ECC -> ECC Correction

ECC

: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Erase Flow Chart

Start

I/O 6 = 1 ?

I/O 0 = 0 ?

Write 60h

Write Block Address

Write D0h

Read Status Register

or R/B = 1 ?

Erase Error

Yes

: If erase operation results in an error, map out

the failing block and replace it with another block.

Erase Completed

Yes

Read Flow Chart

Start

Verify ECC

Write 00h

Write Address

Read Data

ECC Generation

Reclaim the Error

Page Read Completed

Yes

NAND Flash Technical Notes (Continued)

Block Replacement

* Step1
When an error happens in the nth page of the Block 'A' during erase or program operation.
* Step2
Copy the nth page data of the Block 'A' in the buffer memory to the nth page of another free block. (Block 'B')
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block 'B'.
* Step4
Do not further erase Block 'A' by creating an 'invalid Block' table or other appropriate scheme.

Buffer memory of the controller.

1st

Block A

Block B

(n-1)th
nth

(page)

{

1st

(n-1)th
nth

(page)

{

an error occurs.

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. '00h'
command sets the pointer to 'A' area(0~255byte), '01h' command sets the pointer to 'B' area(256~511byte), and '50h' command sets
the pointer to 'C' area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). '00h' or '50h' is sustained until another address pointer command is inputted. '01h' command, however, is effec-
tive only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with '01h' command,
the address pointer returns to 'A' area by itself. To program data starting from 'A' or 'C' area, '00h' or '50h' command must be input-
ted before '80h' command is written. A complete read operation prior to '80h' command is not necessary. To program data starting
from 'B' area, '01h' command must be inputted right before '80h' command is written.

00h

(1) Command input sequence for programming 'A' area

Address / Data input

80h

10h

00h

80h

10h

Address / Data input

The address pointer is set to 'A' area(0~255), and sustained

01h

(2) Command input sequence for programming 'B' area

Address / Data input

80h

10h

01h

80h

10h

Address / Data input

'B', 'C' area can be programmed.
It depends on how many data are inputted.

'01h' command must be rewritten before
every program operation

The address pointer is set to 'B' area(256~512), and will be reset to
'A' area after every program operation is executed.

50h

(3) Command input sequence for programming 'C' area

Address / Data input

80h

10h

50h

80h

10h

Address / Data input

Only 'C' area can be programmed.

'50h' command can be omitted.

The address pointer is set to 'C' area(512~527), and sustained

'00h' command can be omitted.

It depends on how many data are inputted.

'A','B','C' area can be programmed.

Pointer Operation of K9F5608X0B(X8)

Table 2. Destination of the pointer

Command

Pointer position

Area

00h
01h
50h

0 ~ 255 byte

256 ~ 511 byte
512 ~ 527 byte

1st half array(A)

2nd half array(B)

spare array(C)

"A" area

256 Byte

(00h plane)

"B" area

(01h plane)

"C" area

(50h plane)

256 Byte

16 Byte

"A"

"B"

"C"

Internal

Page Register

Pointer select
commnad
(00h, 01h, 50h)

Pointer

Figure 4. Block Diagram of Pointer Operation

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. '00h' command
sets the pointer to 'A' area(0~255word), and '50h' command sets the pointer to 'B' area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). '00h' or '50h' is sustained until another address pointer com-
mand is inputted. To program data starting from 'A' or 'B' area, '00h' or '50h' command must be inputted before '80h' command is
written. A complete read operation prior to '80h' command is not necessary.

00h

(1) Command input sequence for programming 'A' area

Address / Data input

80h

10h

00h

80h

10h

Address / Data input

The address pointer is set to 'A' area(0~255), and sustained

50h

(2) Command input sequence for programming 'B' area

Address / Data input

80h

10h

50h

80h

10h

Address / Data input

Only 'B' area can be programmed.

'50h' command can be omitted.

The address pointer is set to 'B' area(256~263), and sustained

'00h' command can be omitted.

It depends on how many data are inputted.

'A','B' area can be programmed.

Pointer Operation of K9F5616X0B(X16)

Table 3. Destination of the pointer

Command

Pointer position

Area

00h
50h

0 ~ 255 word

256 ~ 263 word

main array(A)

spare array(B)

"A" area

256 Word

(00h plane)

"B" area

(50h plane)

8 Word

"A"

"B"

Internal

Page Register

Pointer select
command
(00h, 50h)

Pointer

Figure 5. Block Diagram of Pointer Operation

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

System Interface Using CE don't-care.

Start Add.(3Cycle)

80h

Data Input

CLE

ALE

Data Input

CE don't-care

10h

For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.

Start Add.(3Cycle)

00h

CLE

ALE

Data Output(sequential)

CE don't-care

R/B

CEA

out

REA

I/O

Figure 6. Program Operation with CE don't-care.

Figure 7. Read Operation with CE don't-care.

On K9F5608U0B_Y,P or K9F5608U0B_V,F

I/Ox

CE must be held
low during tR

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

CLE

ALE

I/Ox

AO~A7

CLS

ALS

ALH

ALS

ALH

ALS

ALH

* Command Latch Cycle

CLE

ALE

I/Ox

Command

* Address Latch Cycle

CLS

CLH

ALS

ALH

A17~A24

A9~A16

NOTE: 1. I/O8~15 must be set to "0" during command or address input.
2. I/O8~15 are used only for data bus.

Device

I/O

DATA

I/Ox

Data In/Out

K9F5608X0B(X8 device)

I/O 0 ~ I/O 7

~528byte

K9F5616X0B(X16 device)

I/O 0 ~ I/O 15

~264word

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

CHZ

* Status Read Cycle

CLE

I/Ox

70h

Status Output

CLR

CLH

REA

WHR

CEA

CLS

READ1 OPERATION

(READ ONE PAGE)

CLE

R/B

ALE

Busy

Read

A0~A7

A9~A16

A17~A24

Dout N

Dout N+1 Dout N+2

Dout N+3

Column
Address

Page(Row)
Address

Dout m

X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h

RHZ

CEH

CRY

N Address

CMD

NOTES : 1) is only valid

on K9F5608U0B_Y,P or K9F5608U0B_V,F

I/Ox

On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR

RHZ

CHZ

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

READ1 OPERATION

(INTERCEPTED BY CE)

CLE

R/B

ALE

Busy

Dout N

Dout N+1 Dout N+2

Dout N+3

Page(Row)
Address

Address

Column

CHZ

READ2 OPERATION

(READ ONE PAGE)

CLE

R/B

ALE

50h

Dout

Dout n+m

M Address

n+M

Dout

n+M+1

Selected
Row

Start
address M

X8 device : A

are Valid Address & A

are Don

care

X8 device : n = 512, m = 16
X16 device : n = 256, m = 8

N Address

CMD

Read

I/Ox

Col. Add

Row Add1

Row Add2

Col. Add

Row Add1

Row Add2

On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR

X16 device : A

are Valid Address & A

are "L"

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PAGE PROGRAM OPERATION

CLE

R/B

ALE

80h

70h

I/O

Din

10h

N+1

Sequential Data

Input Command

Column

Address

Page(Row)

Address

1 up to m Data

Serial Input

Program

Command

Read Status

Command

I/O

=0 Successful Program

I/O

=1 Error in Program

PROG

X8 device : m = 528 byte
X16 device : m = 264 word

N Address

SEQUENTIAL ROW READ OPERATION

(only for K9F5608U0B-Y,P and K9F5608U0B-V,F, Valid with in a block)

CLE

R/B

I/Ox

ALE

00h

Output

Dout

N+1

Dout

N+2

Dout

527

Dout

527

M+1

Output

Busy

Ready

I/Ox

Col. Add

Row Add1

Row Add2

Col. Add

Row Add1

Row Add2

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

BLOCK ERASE OPERATION

(ERASE ONE BLOCK)

CLE

R/B

ALE

60h

Auto Block Erase

Erase Command

Read Status

Command

I/O

=1 Error in Erase

DOh

70h

I/O 0

Busy

BERS

I/O

=0 Successful Erase

Page(Row)

Address

Setup Command

COPY-BACK PROGRAM OPERATION

CLE

R/B

ALE

00h

70h

I/O

8Ah

Column

Address

Page(Row)

Address

Program

Command

Read Status

Command

I/O

=0 Successful Program

I/O

=1 Error in Program

PROG

Column

Address

Page(Row)

Address

Busy

I/Ox

Col. Add Row Add1

Row Add2

A9~A16

A17~A24

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

DEVICE OPERATION

PAGE READ

Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-
tion. Two types of operations are available : random read, serial page read.
The random read mode is enabled when the page address is changed. The 528 bytes(X8 device) or 264 words(X16 device) of data
within the selected page are transferred to the data registers in less than 10

s(t

). The system controller can detect the completion of

this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in
50ns cycle time by sequentially pulsing RE. High to low transitions of the RE clock output the data starting from the selected column
address up to the last column address[column 511/ 527(X8 device) 255 /263(X16 device) depending on the state of GND input pin].
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
~527 bytes(X8 device) or 256~263 words(X16 device) may be selectively accessed by writing the Read2 command with GND input
pin low. Addresses A

(X8 device) or A

(X16 device) set the starting address of the spare area while addresses A

are

ignored in X8 device case

must be "L" in X16 device case. The Read1 command is needed to move the pointer back to the

main area. Figures 8, 9 show typical sequence and timings for each read operation.

Sequential Row Read is available only for K9F5608U0B_Y,P and K9F5608U0B_V,F :
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10

again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 8-1, 9-1 show typical sequence and timings for sequential row read
operation.

Figure 8. Read1 Operation

Start Add.(3Cycle)

00h

X8 device : A

~ A

& A

~ A

Data Output(Sequential)

(00h Command)

Data Field

Spare Field

CLE

ALE

R/B

Main array

(01h Command)

Data Field

Spare Field

1st half array

2st half array

NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle. 01h command is only available on X8 device(K9F5608X0B).

I/Ox

X16 device : A

~ A

& A

~ A

On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Figure 9. Read2 Operation

50h

Data Output(Sequential)

Spare Field

CLE

ALE

R/B

Start Add.(3Cycle)

X8 device : A

~ A

& A

~ A

Main array

Data Field

Spare Field

Figure 8-1. Sequential Row Read1 Operation (only for K9F5608U0B-Y,P and K9F5608U0B-V,F Valid with in a block )

00h

01h

~ A

& A

~ A

I/Ox

R/B

Start Add.(3Cycle)

Data Output

1st

2nd

Nth

(528 Byte)

(GND input=L, 00h Command)

Data Field

Spare Field

(GND input=L, 01h Command)

Data Field

Spare Field

(GND input=H, 00h Command)

Data Field

Spare Field

1st half array 2nd half array

1st
2nd
Nth

1st half array 2nd half array

1st
2nd
Nth

Block

1st half array 2nd half array

1st
2nd
Nth

X16 device : A

~ A

& A

~ A

X8 device : A

~ A

Don't care

X16 device : A

~ A

are "L"

I/Ox

On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

PAGE PROGRAM

The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive
bytes/words up to 528

(X8 device) or

264

(X16 device)

, in a single page program cycle. The number of consecutive partial page program-

ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare
array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in
which up to 528 bytes

(X8 device)

or 264 words

(X16 device)

of data may be loaded into the page register, followed by a non-volatile pro-

gramming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three address cycles input
and then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm
command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the
programming process. The internal write controller automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command
are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure
10). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains
in Read Status command mode until another valid command is written to the command register.

Figure 10. Program Operation

80h

R/B

Address & Data Input

I/O

Pass

10h

70h

Fail

PROG

COPY-BACK PROGRAM

The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within
the same array without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back is a sequential execu-
tion of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation
with "00h" command with the address of the source page moves the whole 528bytes/264words(X8 device:528bytes, X16
device:264words) data into the internal buffer. As soon as the Flash returns to Ready state, copy-back programming command "8Ah"
may be given with three address cycles of target page followed. The data stored in the internal buffer is then programmed directly
into the memory cells of the destination page. Once the Copy-Back Program is finished, any additional partial page programming into
the copied pages is prohibited before erase. Since the memory array is internally partitioned into two different planes, copy-back pro-
gram is allowed only within the same memory plane. Thus, A14, the plane address, of source and destination page address must be
the same.

"When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if Copy-Back

operations are accumulated over time, bit error due to charge loss is not checked by external error detection/correction
scheme. For this reason, two bit error correction is recommended for the use of Copy-Back operation."

Figure 11. Copy-Back Program Operation

00h

R/B

Add.(3Cycles)

I/O

Pass

8Ah

70h

Fail

PROG

Add.(3Cycles)

Source Address

Destination Address

I/Ox

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Figure 12. Block Erase Operation

BLOCK ERASE

The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com-
mand(60h). Only address A

to A

is valid while A

to A

is ignored. The Erase Confirm command(D0h) following the block

address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.

60h

Block Add. : A

~ A

R/B

Address Input(2Cycle)

I/O

Pass

D0h

70h

Fail

BERS

READ STATUS

The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.

Table4. Read Status Register Definition

I/O #

Status

Definition

I/O 0

Program / Erase

"0" : Successful Program / Erase

"1" : Error in Program / Erase

I/O 1

Reserved for Future

Use

"0"

I/O 2

"0"

I/O 3

"0"

I/O 4

"0"

I/O 5

"0"

I/O 6

Device Operation

"0" : Busy "1" : Ready

I/O 7

Write Protect

"0" : Protected "1" : Not Protected

I/O 8~15

Not use

Don't care

I/Ox

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

Figure 13. Read ID Operation

CLE

ALE

90h

00h

Address. 1cycle

Maker code

Device code

CEA

REA

READ ID

The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code respectively. The command register
remains in Read ID mode until further commands are issued to it. Figure 13 shows the operation sequence.

WHR

Figure 14. RESET Operation

RESET

The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 14 below.

After Power-up

After Reset

Operation Mode

Waiting for next command

FFh

R/B

Table5. Device Status

RST

ECh

Device

I/Ox

Device

Device Code*

K9F5608Q0B

35h

K9F5608U0B

75h

K9F5616Q0B

45h

K9F5616U0B

55h

Code*

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

READY/BUSY

The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 15). Its value can
be determined by the following guidance.

R/B

open drain output

Device

GND

t
r
,
t
f

[
s

]

I
b

[
A

]

Rp(ohm)

Fig 15 Rp vs tr ,tf & Rp vs ibusy

Ibusy

ibusy

Busy

Ready Vcc

@ Vcc = 3.3V, Ta = 25

C , C

= 100pF

VOH

100n

200n

300n

100

200

300

400

3.6

2.4

1.2

0.8

0.6

VOL

Rp(min, 1.8V part) =

(Max.) - V

(Max.)

1.85V

3mA

where I

is the sum of the input currents of all devices tied to the R/B pin.

Rp value guidance

Rp(max) is determined by maximum permissible limit of tr

Rp(min, 3.3V part) =

(Max.) - V

(Max.)

3.2V

8mA

1.8V device - V

: 0.1V, V

: V

q-0.1V

3.3V device - V

: 0.4V, V

: 2.4V

t
r
,
t
f

[
s

]

I
b

[
A

]

Rp(ohm)

Ibusy

@ Vcc = 1.8V, Ta = 25

C , C

= 30pF

100n

200n

300n

120

1.7

0.85

0.57

0.43

FLASH MEMORY

K9F5616U0B-YCB0,YIB0,PCB0,PIB0

K9F5616U0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-YCB0,YIB0,PCB0,PIB0

K9F5608U0B-DCB0,DIB0,HCB0,HIB0

K9F5608Q0B-DCB0,DIB0,HCB0,HIB0

K9F5616Q0B-DCB0,DIB0,HCB0,HIB0

K9F5608U0B-VCB0,VIB0,FCB0,FIB0

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. WP pin provides hardware protection and is recommended to be kept at
V

during power-up and power-down and recovery time of minimum 10

s is required before internal circuit gets ready for any com-

mand sequences as shown in Figure 16. The two step command sequence for program/erase provides additional software protec-
tion.

Figure 16. AC Waveforms for Power Transition

High

1.8V device : ~ 1.5V

Data Protection & Powerup sequence

3.3V device : ~ 2.5V

1.8V device : ~ 1.5V
3.3V device : ~ 2.5V

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