KM641003C
PRELIMINARY
Revision 1.0
- 1 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Remark
Preliminary
Final
History
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
Draft Data
Aug. 5. 1998
Mar. 3. 1999
KM641003C
PRELIMINARY
Revision 1.0
- 2 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
256K x 4 Bit (with OE) High-Speed CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
Fast Access Time 12,15,20ns(Max.)
Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
Operating KM641003C - 12 : 70mA(Max.)
KM641003C - 15 : 68mA(Max.)
KM641003C - 20 : 65mA(Max.)
Single 5.0V
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration :
KM641003CJ : 32-SOJ-400
The KM641003C is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits. The
KM641003C uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM641003C is packaged
in a 400 mil 32-pin plastic SOJ.
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
4
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
(Top View)
Clk Gen.
I/O
1
~ I/O
4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
o
w
S
e
l
e
c
t
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
17
A
16
A
15
A
14
A
13
OE
I/O
4
Vss
Vcc
I/O
3
A
12
A
11
A
10
A
9
A
8
N.C
N.C
A
0
A
1
A
2
A
3
CS
I/O
1
Vcc
Vss
I/O
2
WE
A
4
A
5
A
6
A
7
N.C
A
10
A
11
A
12
A
13
A
14
A
15
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
9
A
16
A
17
A
8
KM641003C
PRELIMINARY
Revision 1.0
- 3 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to Vcc+0.5V
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
d
1
W
Storage Temperature
T
STG
-65 to 150
C
Operating Temperature
T
A
0 to 70
C
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70
C)
* V
IL
(Min) = -2.0V a.c (Pulse Width
8ns) for I
20mA.
** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
8ns) for I
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5**
V
Input Low Voltage
V
IL
-0.5*
-
0.8
V
CAPACITANCE*
(T
A
=25
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70
C, Vcc=5.0V
10%, unless otherwise specified)
* V
CC
=5.0V
5%, Temp.=25
C
.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
A
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
12ns
-
70
mA
15ns
-
68
20ns
-
65
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
30
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
-
5
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1
*
I
OH1
=-0.1mA
-
3.95
V
KM641003C
PRELIMINARY
Revision 1.0
- 4 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
C, V
CC
=5.0V
10%, unless otherwise noted.)
READ CYCLE
Parameter
Symbol
KM641003C-12
KM641003C-15
KM641003C-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
6
-
7
-
9
ns
Output Disable to High-Z Output
t
OHZ
0
6
0
7
0
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
12
-
15
-
20
ns
Output Loads(B)
D
OUT
5pF*
480
255
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
KM641003C
PRELIMINARY
Revision 1.0
- 5 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
WRITE CYCLE
Parameter
Symbol
KM641003C-12
KM641003C-15
KM641003C-20
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
8
-
9
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
t
WP
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
12
-
15
-
20
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
6
0
7
0
9
ns
Data to Write Time Overlap
t
DW
6
-
7
-
8
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data out
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
RC
t
OE
t
CO
t
PU
t
PD
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
Valid Data
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