Page 1

Rev.0.9 Apr. 1999

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Overview

The Rambus

RIMMTM module is a general purpose high-

performance memory subsystem suitable for use in a broad
range of applications including computer memory, personal
computers, workstations, and other applications where high
bandwidth and low latency are required.

The Rambus RIMM module consists of 128Mb/144Mb
Direct Rambus DRAM devices. These are extremely high-
speed CMOS DRAMs organized as 8M words by 16 or 18
bits. The use of Rambus Signaling Level (RSL) technology
permits 600MHz or 800MHz transfer rates while using
conventional system and board design technologies.
RDRAM devices are capable of sustained data transfers at
1.25 ns per two bytes (10ns per 16 bytes).

The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM's 32-banks architecture
supports up to four simultaneous transactions per device.

Features

High speed 800 and 600MHz RDRAM storage

184 edge connector pads with 1mm pad spacing

Maximum module PCB size : 133.5mm x 34.93mm x

1.37mm (5.21

x 1.375

x 0.05

)

Each RDRAM has 32 banks, for a total of 512, 384, 256,
192, or 128 banks on each 256/288MB, 192/216MB,
128/144MB, 96/108MB, or 64/72MB module respectively

Gold plated edge connector pad contacts

Serial Presence Detect(SPD) support

Operates from a 2.5 volt supply (±5%)

Low power and powerdown self refresh modes

Separate Row and Column buses for higher efficiency

RDRAMs use

µ-

BGA package type

Key Timing Parameters/Part Numbers

The following table lists the frequency and latency bins
available from RIMM modules. An optional ` S' designator
instead of `R' followed by ` hyphen(-)' indicates low power
modules.

TABLE 1. Part Number by Freq. & Latency

Form Factor

The Rambus RIMM modules are offered in a 184-pad 1mm
edge connector pad pitch form factor suitable for 184 contact
RIMM connectors. The RIMM module is suitable for
desktop and other system applications.

Organization

Speed

Part Number

a. -S designator is used for modules with lower self-refresh current.

Binning

I/O

Freq.
MHz

rac

(Row

Access

Time) ns

32M x 16/18

-RG6

600

KMMR16/18R84C-RG6

-RK8

800

KMMR16/18R84C-RK8

-RM8

800

KMMR16/18R84C-RM8

48M x 16/18

-RG6

600

KMMR16/18R86C-RG6

-RK8

800

KMMR16/18R86C-RK8

-RM8

800

KMMR16/18R86C-RM8

64M x 16/18

-RG6

600

KMMR16/18R88C-RG6

-RK8

800

KMMR16/18R88C-RK8

-RM8

800

KMMR16/18R88C-RM8

96M x 16/18

-RG6

600

KMMR16/18R8CC-RG6

-RK8

800

KMMR16/18R8CC-RK8

-RM8

800

KMMR16/18R8CC-RM8

128M x 16/18

-RG6

600

KMMR16/18R8GC-RG6

-RK8

800

KMMR16/18R8GC-RK8

-RM8

800

KMMR16/18R8GC-RM8

Figure 1: Rambus RIMM Module without heat spreader

Note: On two sided modules, RDRAMs are also installed on bottem side of PCB.

Page 2

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Rev.0.9 Apr. 1999

TABLE 2. Module Pad Number and Signal Names

Pin

Pin Name

Pin

Pin Name

Pin

Pin Name

Pin

Pin Name

Gnd

A47

B47

LDQA8

LDQA7

A48

B48

Gnd

A49

B49

LDQA6

LDQA5

A50

B50

Gnd

A51

Vref

B51

Vref

LDQA4

LDQA3

A52

Gnd

B52

Gnd

A53

SCL

B53

SA0

LDQA2

LDQA1

A54

Vdd

B54

Vdd

Gnd

A55

SDA

B55

SA1

A10

LDQA0

B10

LCFM

A56

SVdd

B56

SVdd

A11

Gnd

B11

Gnd

A57

SWP

B57

SA2

A12

LCTMN

B12

LCFMN

A58

Vdd

B58

Vdd

A13

Gnd

B13

Gnd

A59

RSCK

B59

RCMD

A14

LCTM

B14

A60

Gnd

B60

Gnd

A15

Gnd

B15

Gnd

A61

RDQB7

B61

RDQB8

A16

B16

LROW2

A62

Gnd

B62

Gnd

A17

Gnd

B17

Gnd

A63

RDQB5

B63

RDQB6

A18

LROW1

B18

LROW0

A64

Gnd

B64

Gnd

A19

Gnd

B19

Gnd

A65

RDQB3

B65

RDQB4

A20

LCOL4

B20

LCOL3

A66

Gnd

B66

Gnd

A21

Gnd

B21

Gnd

A67

RDQB1

B67

RDQB2

A22

LCOL2

B22

LCOL1

A68

Gnd

B68

Gnd

A23

Gnd

B23

Gnd

A69

RCOL0

B69

RDQB0

A24

LCOL0

B24

LDQB0

A70

Gnd

B70

Gnd

A25

Gnd

B25

Gnd

A71

RCOL2

B71

RCOL1

A26

LDQB1

B26

LDQB2

A72

Gnd

B72

Gnd

A27

Gnd

B27

Gnd

A73

RCOL4

B73

RCOL3

A28

LDQB3

B28

LDQB4

A74

Gnd

B74

Gnd

A29

Gnd

B29

Gnd

A75

RROW1

B75

RROW0

A30

LDQB5

B30

LDQB6

A76

Gnd

B76

Gnd

A31

Gnd

B31

Gnd

A77

B77

RROW2

A32

LDQB7

B32

LDQB8

A78

Gnd

B78

Gnd

A33

Gnd

B33

Gnd

A79

RCTM

B79

A34

LSCK

B34

LCMD

A80

Gnd

B80

Gnd

A35

Vcmos

B35

Vcmos

A81

RCTMN

B81

RCFMN

A36

SOUT

B36

SIN

A82

Gnd

B82

Gnd

A37

Vcmos

B37

Vcmos

A83

RDQA0

B83

RCFM

A38

B38

A84

Gnd

B84

Gnd

A39

Gnd

B39

Gnd

A85

RDQA2

B85

RDQA1

A40

B40

A86

Gnd

B86

Gnd

A41

Vdd

B41

Vdd

A87

RDQA4

B87

RDQA3

A42

Vdd

B42

Vdd

A88

Gnd

B88

Gnd

A43

B43

A89

RDQA6

B89

RDQA5

A44

B44

A90

Gnd

B90

Gnd

A45

B45

A91

RDQA8

B91

RDQA7

A46

B46

A92

Gnd

B92

Gnd

Page 3

Rev.0.9 Apr. 1999

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

TABLE 3. Module Connector Pad Description

Signal

Pins

I/O

Type

Description

Gnd

A1, A3, A5, A7, A9, A11, A13, A15,
A17, A19, A21, A23, A25, A27, A29,
A31, A33, A39, A52, A60, A62, A64,
A66, A68, A70, A72, A74, A76, A78,
A80, A82, A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11, B13, B15,
B17, B19, B21, B23, B25, B27, B29,
B31, B33, B39, B52, B60, B62, B64,
B66, B68, B70, B72, B74, B76, B78,
B80, B82, B84, B86, B88, B90, B92

Ground reference for RDRAM core and interface. 72
PCB connector pads.

LCFM

B10

RSL

Clock from master. Interface clock used for receiving
RSL signals from the Channel. Positive polarity.

LCFMN

B12

RSL

Clock from master. Interface clock used for receiving
RSL signals from the Channel. Negative polarity.

LCMD

B34

CMOS

Serial Command used to read from and write to the con-
trol registers. Also used for power management.

LCOL4..
LCOL0

A20, B20, A22, B22, A24

RSL

Column bus. 5-bit bus containing control and address
information for column accesses.

LCTM

A14

RSL

Clock to master. Interface clock used for transmitting
RSL signals to the Channel. Positive polarity.

LCTMN

A12

RSL

Clock to master. Interface clock used for transmitting
RSL signals to the Channel. Negative polarity.

LDQA8..
LDQA0

A2, B2, A4, B4, A6, B6, A8, B8, A10

I/O

RSL

Data bus A. A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. LDQA8 is
non-functional on modules with x16 RDRAM devices

LDQB8..
LDQB0

B32, A32, B30, A30, B28, A28, B26,
A26, B24

I/O

RSL

Data bus B. A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. LDQB8 is
non-functional on modules with x16 RDRAM devices.

LROW2..
LROW0

B16, A18, B18

RSL

Row bus. 3-bit bus containing control and address infor-
mation for row accesses.

LSCK

A34

CMOS

Serial Clock input. Clock source used to read from and
write to the RDRAM control registers.

A16, B14, A38, B38, A40, B40, A43,
B43, A44, B44, A45, B45, A46, B46,
A47, B47, A48, B48, A49, B49, A50,
B50, A77, B79

These pads are not connected. These 24 connector pads
are reserved for future use.

RCFM

B83

RSL

Clock from master. Interface clock used for receiving
RSL signals from the Channel. Positive polarity.

RCFMN

B81

RSL

Clock from master. Interface clock used for receiving
RSL signals from the Channel. Negative polarity.

RCMD

B59

CMOS

Serial Command Input. Pin used to read from and write
to the control registers. Also used for power manage-
ment.

RCOL4..
RCOL0

A73, B73, A71, B71, A69

RSL

Column bus. 5-bit bus containing control and address
information for column accesses.

Page 4

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Rev.0.9 Apr. 1999

RCTM

A79

RSL

Clock to master. Interface clock used for transmitting
RSL signals to the Channel. Positive polarity.

RCTMN

A81

RSL

Clock to master. Interface clock used for transmitting
RSL signals to the Channel. Negative polarity.

RDQA8..
RDQA0

A91, B91, A89, B89, A87, B87, A85,
B85, A83

I/O

RSL

Data bus A. A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. RDQA8 is
non-functional on modules x16 RDRAM devices.

RDQB8..
RDQB0

B61, A61, B63, A63, B65, A65, B67,
A67, B69

I/O

RSL

Data bus B. A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. RDQB8 is
non-functional on modules x16 RDRAM devices.

RROW2..
RROW0

B77, A75, B75

RSL

Row bus. 3-bit bus containing control and address infor-
mation for row accesses.

RSCK

A59

CMOS

Serial Clock input. Clock source used to read from and
write to the RDRAM control registers.

SA0

B53

Serial Presence Detect Address 0.

SA1

B55

Serial Presence Detect Address 1.

SA2

B57

Serial Presence Detect Address 2.

SCL

A53

Serial Presence Detect Clock.

SDA

A55

I/O

Serial Presence Detect Data (Open Collector I/O).

SIN

B36

I/O

CMOS

Serial I/O for reading from and writing to the control
registers. Attaches to SIO0 of the first RDRAM on the
module.

SOUT

A36

I/O

CMOS

Serial I/O for reading from and writing to the control
registers. Attaches to SIO1 of the last RDRAM on the
module.

A56, B56

SPD Voltage. Used for signals SCL, SDA, SWE, SA0,
SA1 and SA2.

SWP

A57

Serial Presence Detect Write Protect (active high). When
low, the SPD can be written as well as read.

CMOS

A35, B35, A37, B37

CMOS I/O Voltage. Used for signals CMD, SCK, SIN,
SOUT.

Vdd

A41, A42, A54, A58, B41, B42, B54,
B58

Supply voltage for the RDRAM core and interface logic.

Vref

A51, B51

Logic threshold reference voltage for RSL signals.

Signal

Pins

I/O

Type

Description

Page 5

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Rev.0.9 Apr. 1999

W
2

W
1

W
0

SIO0
SIO1
SCK
CMD
Vref

Direct RDRAM (128/144Mb)

W
2

W
1

W
0

W
2

W
1

W
0

I
N

Vdd

Gnd

2 per
RDRAM

SCL

SDA

A0 A1

SCL

SA0
SA1

SDA

Serial Presence Detect

Note 1. Rambus Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.

W
2

W
1

W
0

SIO0
SIO1
SCK
CMD
Vref

Direct RDRAM (128/144Mb)

W
2

W
1

W
0

SIO0
SIO1
SCK
CMD
Vref

Direct RDRAM (128/144Mb)

W
2

W
1

W
0

SIO0
SIO1
SCK
CMD
Vref

Direct RDRAM (128/144Mb)

REF

Gnd

1 per
2 RDRAMs

CMOS

Gnd

1 per
2 RDRAMs

SA2

SWP

Vcc

0.1

Gnd

0.1

Plus one

Near Connector

47K

·
·

Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.

Module

Capacity

256MB

192MB

128MB

96MB

64MB

Figure 2: RIMM Module Functional Diagram

Page 6

Rev.0.9 Apr. 1999

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Absolute Maximum Ratings

DC Recommended Electrical Conditions

a. The table below shows the number of 128Mb or 144Mb RDRAM devices contained in a RIMM module of listed memory storage capacity.

Table a. Number of RDRAM devices

Symbol

Parameter

Min

Max

Unit

I,ABS

Voltage applied to any RSL or CMOS singnal pad with respect to Gnd

- 0.3

+ 0.3

DD,ABS

Voltage on VDD with respect to Gnd

- 0.5

+ 1.0

STORE

Storage temperature

- 50

100

Symbol

Parameter and Conditions

Min

Max

Unit

Supply voltage

2.50 - 0.13

2.50 + 0.13

CMOS

CMOS I/O power supply at pad for 2.5V controllers:

CMOS I/O power supply at pad for 1.8V controllers:

2.5 - 0.13

1.8 - 0.1

2.5 + 0.25

1.8 + 0.2

REF

Reference voltage

1.4 - 0.2

1.4 + 0.2

RSL input low voltage

REF

- 0.5

REF

- 0.2

RSL input high voltage

REF

+ 0.2

REF

+ 0.5

IL,CMOS

CMOS input low voltage

- 0.3

0.5V

CMOS

- 0.25

IH,CMOS

CMOS input high voltage

0.5V

CMOS

+ 0.25

CMOS

+ 0.7

OL,CMOS

CMOS output low voltage @ I

OL,CMOS

= 1mA

0.3

OH,CMOS

CMOS output high voltage @ I

OH,CMOS

= -0.25mA

CMOS

- 0.3

REF

current @ V

REF,MAX

-10 x no. RDRAMs

10 x no. RDRAMs

SCK,CMD

CMOS input leakage current @ (0

CMOS

)

-10 x no. RDRAMs

10 x no. RDRAMs

SIN,SOUT

CMOS input leakage current @ (0

CMOS

)

-10.0

10.0

RIMM Module Capacity

256/288MB

192/216MB

128/144MB

96/108MB

64/72MB

Number of 128Mb or 144Mb RDRAM devices

Page 7

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Rev.0.9 Apr. 1999

AC Electrical Specifications

a. Table below lists parameters and specifications for different storage capacity RIMM Modules that use 128Mb or 144Mb RDRAM devices.

b. Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM and CFMN).

AC Electrical Specifications for RIMM Modules

Symbol

Parameter and Conditions

Min

Typ

Max

Unit

Module Impedance

25.2

30.8

Propagation Delay, all RSL signals

See

Table

Propagation delay variation of RSL signals with respect to an average clock
delay

-10

PD-CMOS

Propagation delay variation of SCK and CMD signals with respect to an average
clock delay

-100

100

Attenuation Limit

See

Table

Forward crosstalk coefficient (300ps input rise time @ 20%-80%)

See

Table

Backward crosstalk coefficient (300ps input rise time @ 20%-80%)

See

Table

Symbol

RIMM Module Capacity

256/288MB

192/216MB

128/144MB

96/108MB

64/72MB

Unit

No. of 128/144Mb RDRAMs

Parameter and Condition for -800 & -
600 RIMM Modules

Max

Propagation Delay, all RSL signals -800

2.06

TBD

1.50

TBD

1.25

Propagation Delay, all RSL signals -600

2.10

TBD

1.60

TBD

1.25

Attenuation Limit -800

TBD

Attenuation Limit -600

TBD

Forward crosstalk coefficient (300ps input
rise time @ 20%-80%) -800

TBD

Forward crosstalk coefficient (300ps input
rise time @ 20%-80%) -600

TBD

Backward crosstalk coefficient (300ps
input rise time @ 20%-80%) -800

2.5

TBD

2.0

TBD

1.5

Backward crosstalk coefficient (300ps
input rise time @ 20%-80%) -600

2.5

TBD

2.0

TBD

1.5

DC Resistance Limit -800

1.2

TBD

0.8

TBD

0.6

DC Resistance Limit -600

1.2

TBD

0.8

TBD

0.6

Page 8

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Rev.0.9 Apr. 1999

RIMM Module Supply Current Profile

a. Specifications in this table are maximum guidelines. Actual power will depend on individual RDRAM component specifications, memory controller and
usage patterns.

RIMM Module Capacity

256/288MB

192/216MB

128/144MB

96/108MB

64/72MB

Unit

No. of 128/144Mb RDRAMs

RIMM module power condition

@tCYCLE=2.5ns

Max

DD1

One RDRAM in Read, balance in NAP mode

641

624

606

597

588

DD2

One RDRAM in Read, balance in Standby mode,
no commands

2375

1895

1415

1175

935

DD3

One RDRAM in Read, balance in Active mode,
no commands

3575

2775

1975

1575

1175

Page 9

Rev.0.9 Apr. 1999

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Physical Dimensions

The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The
maximum height of the module is 34.93mm[1.375inches].

Figure 3: RIMM Module PCB Physical Dimensions

COMPONENT AREA

(A SIDE)

133.35

0.15[5.250

0.006]

3.00[0.118]

1.00[0.039]

17.78[0.700]

4.00

0.15

45.00[1.772]

1.00[0.039]

4.00[0.157]

5.68[0.2236]

REF.

11.50[0.453]

45.00[1.772]

78.175[3.078]

REF.

55.175

0.08[2.172

0.003]

DIA 3.18

R 2.00

6.35[0.25]

.
9

[
1

.
3

]

.
3

[
1

.
2

]

.
7

[
0

.
7

]

.
4

[
0

.
3

]

4.50[0.177]

A-1

A-92

DETAIL A

DETAIL B

120.65[4.75]

(B SIDE)

COMPONENT AREA

B-1

B-92

0.85[0.033]

CAPACITOR

CSP

0.75-1.35

[0.030-0.053]

1.27

0.10

[0.050

0.004]

0.80

0.10

0.15

0.10

2.99

0.05

[0.031

0.004]

[0.006

0.004]

[0.12

0.002]

DETAIL A

3.00

0.10

2.00

0.10

DETAIL B

[0.12

0.004]

[0.079

0.004]

3.99

0.10

[0.16

0.004]

R 1.00

[0.157

0.006]

Page 10

Rev.0.9 Apr. 1999

4/6/8/12/16d RIMM

Module with 128Mb RDRAMs

KMMR18R84(6/8/C/G)C

KMMR16R84(6/8/C/G)C

4/6/8/12/16d RIMM

Module with 144Mb RDRAMs

Preliminary

Table Of Contents

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Key Timing Parameters/Part Numbers . . . . . . . . . . . 1

Module Pad Numbers and Signal Names . . . . . . . . . 2

Module Connector Pad Description . . . . . . . . . . . . .3-4

RIMM Module Functional Diagram . . . . . . . . . . . . . . 5

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . 6

DC Recommended Electrical Conditions . . . . . . . . . 6

AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . 7

RIMM Module Supply Current Profile . . . . . . . . . . . . 8

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . 9

Direct Rambus and Direct RDRAM, SO-RIMM and RIMM
are trademarks of Rambus Inc. Rambus, RDRAM, and the
Rambus Logo are registered trademarks of Rambus Inc.

This document contains advanced information that is subject
to change by Samsung without notice

Document Version 0.9

Samsung Electronics Co., Ltd.
#24 Nongseo-Ri, Kiheung-Eup Yongin-City

Kyunggi-Do, KOREA

Telephone: 82-331-209-4584
Fax: 82-2-760-7990
http://www.samsungsemi.com

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