42
4.4
1.5
1.5
B
E
C
5.45
0.1
3.3
0.2
1.6
3.3
1.75
0.8
0.2
2.15
1.05
+0.2
-0.1
5.45
0.1
23.0
0.3
16.2
9.5
0.2
5.5
15.6
0.2
5.5
0.2
3.45
3.35
0.65
+0.2
-0.1
0.2
3.0
0.8
a
b
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
0
0
5
1 0
2 0
1 5
2
1
6
5
4
3
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
I
B
=10mA
6 m
A
3 m A
4 m A
2 m A
1 m A
Safe Operating Area (Single Pulse)
f
T
I
E
Characteristics (Typical)
0
3
2
1
0 . 1
1
100
10
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
1 A
5 A
I
C
= 1 0 A
0 . 3
1
2 0
1 0
5
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
800
10000
5000
1000
20000
T y p
1 0
5 0
5
2
1 0 0
0 . 0 5
1
0 . 5
0 . 1
1 0
3 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
DC
10ms
1ms
Without Heatsink
Natural Cooling
6 0
4 0
2 0
3 . 5
0
0
5 0
1 0 0
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
0
2 0
1 0
1 5
5
0
2 . 4
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp) 25C (Case Temp)
30C (Case Temp)
( V
C E
= 4 V )
0 . 3
0 . 5
1
5
2 0
1 0
500
5000
1000
20000
10000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
25C
3 0
C
125C
0 . 0 5 0 . 1
5
1 0
0 . 5
1
2 0
1 2 0
8 0
0
4 0
2 0 0
2 4 0
1 6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
0 . 3
0 . 5
5
1
1
1 0
1 0 0
1 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1352
60
60
6
12(
Pulse
20)
1
60(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1352
10
max
10
max
60
min
2000
min
1.5
max
2.0
max
130typ
170typ
Unit
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=60V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=20mA
I
C
=10A, I
B
=20mA
V
CE
=12V, I
E
=1A
V
CB
=10V, f=1MHz
Darlington
2SB1352
(Ta=25C)
(Ta=25C)
External Dimensions FM100(TO3PF)
Silicon PNP Epitaxial Planar Transistor
Application :
Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Weight : Approx 6.5g
a. Type No.
b. Lot No.
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
4
I
C
(A)
10
V
BB2
(V)
5
I
B2
(mA)
20
t
on
(
s)
0.7typ
t
stg
(
s)
1.5typ
t
f
(
s)
0.6typ
I
B1
(mA)
20
V
BB1
(V)
10
B
C
E
(2 k
)(1 0 0
)
Equivalent circuit
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