Parameter
Type No.
Absolute Maximum Ratings
V
RM
(V)
I
FSM
(A)
V
F
(V)
I
F
(A)
I
F
/
I
RP
(mA)
I
F
/
I
RP
(mA)
Rth( j- )
I
R
(
A)
I
R
(H)
(mA)
t
rr
(ns)
t
rr
(ns)
Tj
(
C)
Tstg
(
C)
Electrical Characteristics (Ta=25
C)
(
C/ W)
(g)
Mass
Others
FMC-26U
3.0
500/500
500/1000
40 to +150
4.0
2.1
FMC-28U
FMC-26UA
B
A
600
2.0
500
100
500
800
3.0
50
1200
3.0
0.5
70
35
3.0
500/500
500/1000
40 to +150
4.0
2.1
3.0
50
70
35
3.0
100
0.5
FMC-28UA
1600
FMC-26U, 26UA
FMC-28U, 28UA
2
I
F(AV)
(A)
V
R
=V
RM
Tj=150
C max
max
V
R
=V
RM
max
10
40
30
20
50
0
1
5
50
10
20ms
I
FSM
(A)
10
40
30
20
50
0
Overcurrent Cycles
Overcurrent Cycles
1
5
Peak For
ward Surge Current I
FSM
(A)
50
10
20ms
I
FSM
(A)
I
FSM
Rating
Peak For
ward Surge Current I
FSM
(A)
I
FSM
Rating
T
C
I
F(AV)
Characteristics
Case Temperature Tc (
C)
0
150
2
3
Average Forward Current I
F(AV)
(A)
T
C
I
F(AV)
Characteristics
Case Temperature Tc (
C)
Average Forward Current I
F(AV)
(A)
50
70
90
110
130
1
Tj
=150
C
T
t
I
F(AV)
P
F
Characteristics
Average Forward Current I
F(AV)
(A)
0
3
10
15
Forward Power Dissipation P
F
(W)
I
F(AV)
P
F
Characteristics
Average Forward Current I
F(AV)
(A)
Forward Power Dissipation P
F
(W)
0
1
2
t / T=1/6
t / T=1/2
D.C.
5
Tj
=150
C
T
t
t / T=1/3, Sinewave
0
150
2
3
50
70
90
110
130
t / T=1/6
t / T=1/2
D.C.
1
Tj
=150
C
T
t
t / T=1/3, Sinewave
0
3
10
15
20
25
0
1
2
t / T=1/6
t / T=1/2
D.C.
5
Tj
=150
C
T
t
t / T=1/3, Sinewave
C 0.5
16.9
16.9
13.5
0.5
(13.5)
8.4
0.8
3.9
4.0
4.0
4.4
0.8
3.9
1.5max
10.0
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54
2.54
5.08
0.85
1.35
0.45
2.4
C0.5
4.2
2.8
0.45
3.3
3.3
(1 Chip)
3.0
(1 Chip)
4.0
(2 Chips)
6.0
(2 Chips)
+0.2
0.1
Ultra-Fast-Recovery Rectifier Diodes
50Hz
Half-cycle Sinewave
Single Shot
With
Heatsink
Fig.
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
t / T=1/3, Sinewave
t / T=1/6
t / T=1/2
D.C.
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