63
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1294)
Application : Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3263
230
230
5
15
4
130(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3263
100
max
100
max
230
min
50
min
2.0
max
60
typ
250
typ
Unit
A
A
V
V
MHz
pF
Conditions
V
CB
=230V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=2A
V
CB
=10V, f=1MHz
LAPT
2SC3263
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
Safe Operating Area (Single Pulse)
f
T
I
E
Characteristics (Typical)
0
3
2
1
0
0 . 5
1 . 0
2 . 0
1 . 5
B a s e C u r r e n t I
B
( A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= 1 0 A
5 A
0
1 5
1 0
5
0
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)
30C (Case Temp)
25C (Case Temp)
0 . 1
1
3
0 . 5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
1 3 0
1 0 0
5 0
3 . 5
0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
3
1 0
1 0 0
3 0 0
0 . 1
1
0 . 5
1 0
4 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
10ms
DC
Without Heatsink
Natural Cooling
0 . 0 2
0 . 1
1
0 . 5
1 0
5
1 5
1 0
5 0
1 0 0
2 0 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
T y p
0
0
5
1 5
1 0
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
1 . 0
A
1.5A
2.0A
3.0A
6 0 0
m A
4 0 0
m A
2 0 0 m
A
1 0 0 m A
5 0 m A
I
B
= 2 0 m A
( V
C E
= 4 V )
C o l l e c t o r C u r r e n t I
C
( A )
0 . 0 2
0 . 5
1
5
1 0
0 . 1
1 5
DC Current Gain h
FE
1 0
5 0
1 0 0
2 0 0
1 2 5 C
2 5 C
3 0 C
0 . 0 2
0 . 1
1
1 0
0
2 0
4 0
6 0
1 0 0
8 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(
)
12
I
C
(A)
5
V
BB2
(V)
5
I
B2
(mA)
500
t
on
(
s)
0.30typ
t
stg
(
s)
2.40typ
t
f
(
s)
0.50typ
I
B1
(mA)
500
V
BB1
(V)
10
External Dimensions MT-100(TO3P)
15.6
0.4
9.6
19.9
0.3
4.0
2.0
5.0
0.2
1.8
3.2
0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
0.1
5.45
0.1
C
4.8
0.2
0.65
+0.2
-0.1
1.4
2.0
0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
h
FE
Rank
O(50 to 100), Y(70 to 140)
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