122
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5002
1500
800
6
7(
Pulse
14)
3.5
80(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5002
100
max
1
max
100
max
800
min
8
min
4 to 9
5
max
1.5
max
4
typ
100
typ
Unit
A
mA
A
V
V
V
MHz
pF
Conditions
V
CB
=1200V
V
CB
=1500V
V
EB
=6V
I
C
=10mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=5A
I
C
=5A, I
B
=1.2A
I
C
=5A, I
B
=1.2A
V
CE
=12V, I
E
=0.5A
V
CB
=10V, f=1MHz
2SC5002
(Ta=25C)
(Ta=25C)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(
)
50
I
C
(A)
4
V
BB2
(V)
5
I
B2
(A)
1.6
t
stg
(
s)
4.0
max
t
f
(
s)
0.2
max
I
B1
(A)
0.8
V
BB1
(V)
10
External Dimensions FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
0.1
3.3
0.2
1.6
3.3
1.75
0.8
0.2
2.15
1.05
+0.2
-0.1
5.45
0.1
23.0
0.3
16.2
9.5
0.2
5.5
15.6
0.2
5.5
0.2
3.45
3.35
0.65
+0.2
-0.1
0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
h
F E
I
C
Characteristics (Typical)
I
C
V
B E
Temperature
Characteristics (Typical)
V
CE
(sat)I
C
Characteristics (Typical)
P c T a Derating
0
7
6
4
2
0
1 . 5
0 . 5
1 . 0
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 5 V )
125C (Case Temp) 25C (Case Temp)
30C (Case Temp)
8 0
6 0
4 0
2 0
3 . 5
0
0
5 0
1 0 0
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
Safe Operating Area (Single Pulse)
5 0 0
1 0 0
1 0 0 0
1
1 0
2 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
0 . 0 2
0 . 1
0 . 0 5
0 . 5
1
5
7
2
5
1 0
1 0 0
5 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 5 V )
1 2 5 C
2 5 C
3 0 C
t
s t g
t
f
I
C
Characteristics (Typical)
0 . 2
1
5
0 . 5
7
0 . 1
0 . 5
5
2 0
1 0
1
Switching Time
t
stg
t
f
(
s)
C o l l e c t o r C u r r e n t I
C
( A )
t
s t g
t
f
V
C C
= 2 0 0 V
I
C
: I
B 1
: I
B 2
= 5 : 1 : 2
1 0 0
s
0
3
2
1
0 . 0 2
0 . 1
0 . 5
1
1 0
5
C o l l e c t o r C u r r e n t I
C
( A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
( I
C
: I
B
= 5 : 1 )
Reverse Bias Safe Operating Area
1 0 0
5 0 0
5 0
2 0 0 0
1 0 0 0
1
0 . 5
0 . 1
1 0
2 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
I
B2
=1A
Duty:less than 1%
T i m e t ( m s )
0 . 1
1
3
0 . 5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
Transient Thermal Resistance
j-a
(C/W)
j - a
t
Characteristics
I
C
V
C E
Characteristics (Typical)
0
0
2
1
7
3
4
5
6
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
1 . 5
A
1 . 2 A
4 0 0 m A
7 0 0 m A
2 0 0 m A
I
B
= 1 0 0 m A
.
.
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