132
Silicon NPN Triple Diffused Planar Transistor
Application : Resonant Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5271
300
200
7
5(
Pulse
10)
2
30(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5271
100
max
100
max
200
min
10 to 30
15
min
1.0
max
1.5
max
10
typ
45
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=300V
V
EB
=7V
I
C
=10mA
V
CE
=2V, I
C
=2.5A
V
CE
=2V, I
C
=1mA
I
C
=2.5A, I
B
=0.5A
I
C
=2.5A, I
B
=0.5A
V
CE
=12V, I
E
=0.5A
V
CB
=10V, f=1MHz
2SC5271
(Ta=25C)
(Ta=25C)
External Dimensions FM20(TO220F)
3.3
0.2
10.1
0.2
4.0
0.2
16.9
0.3
13.0min
8.4
0.2
0.8
0.2
3.9
0.2
2.54
2.54
1.35
0.15
0.85
+0.2
-0.1
1.35
0.15
2.2
0.2
4.2
0.2
2.8
c0.5
2.4
0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
150
R
L
(
)
60
I
C
(A)
2.5
V
BB2
(V)
5
I
B2
(A)
1.0
t
on
(
s)
0.3
max
t
stg
(
s)
1.0
max
t
f
(
s)
0.1
max
I
B1
(A)
0.5
V
BB1
(V)
10
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