Symbol
Ratings
Unit
(Ta=25C)
(Ta=25C)
V
DSS
60
Symbol
Test Conditions
Ratings
Unit
V
(BR) DSS
I
D
= 100
A, V
GS
= 0V
60
min
typ
max
I
GSS
A
A
V
GS
= +20V
+10
I
DSS
S
V
V
DS
= 60V, V
GS
= 0V
100
V
TH
V
DS
= 10V, I
D
= 250
A
2.0
1.0
Re
(yfs)
V
DS
= 10V, I
D
= 25A
20.0
R
DS
(ON)
m
V
ns
ns
ns
ns
V
V
GS
= 10V, I
D
= 25A
Coss
Ciss
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
Crss
t
d
(on)
I
D
= 25A
V
DD
12V
R
L
= 0.48
V
GS
= 10V
t
r
t
d
(off)
t
f
V
SD
I
SD
= 50A, V
GS
= 0V
11
14
pF
pF
pF
2000
900
100
1.0
1.5
To be
defined
V
GSS
V
V
20
50
150
I
D
A
I
D (pulse)
*
A
40 (Tc=25C)
P
D
Tch
W
150
Tstg
C
C
55 to +150
V
GS
= 20V
5
Absolute Maximum Ratings
Electrical Characteristics
MOS FET FKV660 (under development)
77
a) Type No.
b) Lot No.
(Unit: mm)
External Dimensions
FM20 (full-mold)
C 0.5
G D S
13.0
min
a
b
3.3
0.2
10.0
0.2
4.0
0.2
8.4
0.2
0.8
0.2
3.9
0.2
1.35
0.15
1.35
0.15
0.85
2.54
2.54
0.45
2.4
0.2
4.2
0.2
2.8
16.9
0.3
2.2
0.2
* P
W
100
s, duty 1%
+0.2
0.1
+0.2
0.1
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