38
s External Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
50.0
1.0
2.9
0.1
2.4
0.1
0.57
0.02
Cathode Mark
62.3
0.7
5.0
0.2
2.7
0.2
0.6
0.05
Cathode Mark
62.3
0.7
5.0
0.2
2.7
0.2
0.78
0.05
Cathode Mark
62.5
0.7
7.2
0.2
4.0
0.2
0.78
0.05
Cathode Mark
50.0
0.1
1.4
0.1
6.5
0.2
Cathode Mark
8.0
0.2
62.5
0.7
7.2
0.2
4.0
0.2
0.98
0.05
Cathode Mark
C 0.5
16.9
(13.5)
8.4
0.8
3.9
4.0
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54
2.54
0.45
3.3
9.0
15.0
5.0
2.8
3.5
16.5
0.5
20.0
0.5
20.0
0.8
3.3
3.4
2.3
1.0
5.45
5.45
5.0
0.65
2.6
+0.2
0.1
16.9
(13.5)
8.4
0.8
3.9
4.0
10.0
2.2
2.6
4.2
2.8
1.35
0.85
5.08
0.45
3.3
Schottky Barrier Diodes
60V
4.5
0.2
0.05
2.0min
1.35
0.4
1.35
0.4
5.1
2.6
0.2
2.05
0.2
1.1
0.2
1.5
0.2
+0.4
0.1
Package
Part Number
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
V
F
(V)
I
F
(A)
I
R
(mA)
I
R
(H)
(mA)
V
R
= V
RM
max
V
R
= V
RM
max
Tj
(
C)
Tstg
(
C)
Ta
(
C)
max
Mass
(g)
Surface Mount
Axial
Frame-2Pin
Center-tap
Bridge
60
0.7
1.5
2.0
2.0
5.0
6.0
0.7
0.7
1.5
1.5
2.0
3.5
6.0
4.0
10
10
15
20
30
30
4.0
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SPB-G56S
SPB-66S
AK 06
EK 06
EK 16
RK 16
RK 36
RK 46
FMB-G16L
FMB-26
FMB-26L
FME-2106
FMB-36
FMB-2206
FMB-2306
FMB-36M
RBV-406B
0.7
1.5
2.0
2.0
5.0
3.0
0.7
0.7
1.5
1.5
2.0
3.5
5.0
2.0
5.0
5.0
7.5
10.0
15
15.0
2.0
1
1
1
2
3
1
1
1
1
1
2
3
5
1
2.5
1
5
8
8
10
2
20
20
20
20
5
5
22
20
17
15
12
8
4
4
4
4
2
4
4
2
5
82
95
83
84
85
86
87
88
89
91
95
94
91
92
94
95
0.072
0.072
0.072
0.072
0.29
0.29
0.13
0.3
0.3
0.45
0.6
1.2
2.1
2.1
2.1
2.1
5.5
2.1
2.1
5.5
4.25
10
25
25
40
60
40
10
10
25
25
40
70
50
40
50
60
100
150
150
150
40
7.5
70
15
20
125
70
7.5
7.5
15
15
20
35
50
20
50
35
75
275
400
150
20
100
150 (Tj)
100
100
150
150
100
100
100
100
100
100
100
100
100
150 (Tj)
100
150
150 (Tj)
100
100
0.62
0.7
0.69
0.62
0.7
0.7
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.72
0.62
0.7
0.7
0.62
0.62
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
40 to +150
Rth
(j- )
Rth
(j- c)
(
C/W)
Fig.
No.
Page where characteristic curve is shown
6.5
0.4
2.3
0.4
5.4
4.9
4.1
5.4
0.4
1.7
0.5
5.5
0.4
2.5
0.4
0.8
0.1
0.8
1.5 max
0.1
0.55
0.1
0.55
0.1
1.15
0.1
1.2max
2.29
0.5
2.29
0.5
0 to 0.25
0.5
0.2
2.9
0.16
1
.37
5.0
0.7
a: Part Number
b: Polarity
c: Lot No.
(Common to backside of case)
N.C
1 Chip
Anode
Cathode
Anode
Center-tap
Anode
Cathode (Common)
a
b
c
7.5
0.1
7.5
0.1
7.5
0.1
12.5
0.2
4.6
0.2
3.6
0.2
C3
1
+0.2
0.1
+0.2
0.1
0.7
11
0.2
9.5
0.2
15
0.2
(4)
3.8
0.2
3.2
0.2
2.7
0.1
Surface Mount
Center-tap
25
0.2
84
10
20
50
40
30
0
1
5
50
10
20ms
SPB-G34S
100
95
105
110
115
120
125
0
1.0
0.5
2.0
1.5
2.5
3.0
V
R
=40V
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Sinewave
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
T
a
125
C
=
60
C
100
C
28
C
100
10
1
0.1
0.01
0.005
0
10
30
50
60
20
40
100
C
T
a
125
C
=
60
C
28
C
SPB-64S
10
20
50
40
30
0
1
5
50
10
20ms
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
0
10
30
50
60
20
40
80
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
6.0
V
R
=40V
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Sinewave
T
a
125
C
=
60
C
100
C
27
C
100
C
T
a
125
C
=
60
C
27
C
10
20
50
40
30
60
0
1
5
50
10
20ms
SPB-G54S
80
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
V
R
=40V
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Sinewave
T
a
125
C
=
60
C
100
C
28
C
500
100
10
1
0.1
0.01
0.005
0
10
30
50
60
20
40
100
C
T
a
125
C
=
60
C
28
C
SPB-G56S
10
20
30
50
40
60
0
1
5
50
10
20ms
0
0.2
0.4
0.6
1.0
0.8
20
10
1
0.1
0.01
0.001
80
70
90
100
110
120
130
0
2.0
1.0
3.0
4.0
6.0
5.0
V
R
=60V
D.C.
t / T 1/6
=
t / T 1/ 3
=
t / T 1/2
=
Sinewave
T
a
125
C
=
60
C
100
C
23
C
0
20
30
50
60
70
10
40
100
C
T
a
125
C
=
60
C
23
C
50
10
1
0.1
0.01
0.001
SPB-66S
0
1
2
3
4
6
5
100
110
120
130
140
150
0
1
2
3
4
6
5
0
1
2
3
4
6
5
0
10
20
30
40
50
60
0
1
2
3
4
8
5
6
7
0
50
100
150
0
1
2
3
4
6
5
D.C.
Sinewave
t / T=1/2
t / T=1/3, Sinewave
t / T=1/6
D.C.
1 t / T=1/2
1 t / T=2/3
1 t / T=5/6
Tj=
150
C
T
t
t / T=1/2
t / T
=1/2
t / T=1/3, Sinewave
t / T
=1/3
t / T=1/6
t / T
=1/6
D.C.
Tj=150
C
T
t
V
R
=0V
V
R
=60V
Tj=
150
C
T
t
Sinewave
Tj
=150
C
T
t
I
FSM
(A)
I
FSM
(A)
I
FSM
(A)
I
FSM
(A)
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(AV)
(A)
Reverse Voltage V
R
(V)
Reverse Current I
R
(mA)
V
R
--I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
Forward Current I
F
(A)
V
F
-- I
F
Characteristics
(Typical)
Overcurrent Cycles
Peak For
ward Surge Current I
FSM
(A)
I
FMS
Rating
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(
AV)
(A)
Reverse Voltage V
R
(V)
Reverse Current I
R
(mA)
V
R
--I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
Forward Current I
F
(A)
V
F
-- I
F
Characteristics
(Typical)
Overcurrent Cycles
Peak For
ward Surge Current I
FSM
(A)
I
FMS
Rating
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(
AV)
(A)
Reverse Voltage V
R
(V)
Reverse Current I
R
(mA)
V
R
--I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
Forward Current I
F
(A)
V
F
-- I
F
Characteristics
(Typical)
Overcurrent Cycles
Peak For
ward Surge Current I
FSM
(A)
I
FMS
Rating
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(
AV)
(A)
Reverse Voltage V
R
(V)
Reverse Current I
R
(mA)
V
R
--I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
Forward Current I
F
(A)
V
F
-- I
F
Characteristics
(Typical)
Overcurrent Cycles
Peak For
ward Surge Current I
FSM
(A)
I
FMS
Rating
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(
AV)
(A)
Tc-- I
F (AV)
Derating
Case Temperature Tc
(
C)
Average Forward Current I
F
(
AV)
(A)
Average Forward Current I
F(AV)
(A)
Forward Power Loss P
F
(W)
I
F(AV)
--P
F
Characteristics
Reverse Voltage V
R
(V)
Reverse Power Loss P
R
(W)
V
R
--P
R
Characteristics
Characteristic Curves
Schottky Barrier Diodes
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