FMC-G28S
Parameter
Type No.
Absolute Maximum Ratings
V
RM
(V)
I
FSM
(A)
V
F
(V)
I
F
(A)
I
F
/
I
RP
(mA)
I
F
/
I
RP
(mA)
Rth( j- )
I
R
(
A)
I
R
(H)
(mA)
t
rr
(ns)
t
rr
(ns)
Tj
(
C)
Tstg
(
C)
Electrical Characteristics ( Ta = 25
C)
(
C/ W)
(g)
Mass
Others
FMC-G28S
3.0
5.0
500/500
500/1000
40 to +150
4.0
2.1
FMC-G28SL
A
800
3.0
100
200
5.0
3.0
60
50
1.0
2.0
70
35
FMC-G28SL
3
I
F(AV)
(A)
V
R
=V
RM
Tj=150
C max
V
R
=V
RM
max
10
50
40
20
30
60
0
1
5
50
10
20ms
I
FSM
(A)
10
40
30
20
50
0
Overcurrent Cycles
1
5
Peak For
ward Surge Current I
FSM
(A)
50
10
20ms
I
FSM
(A)
I
FSM
Rating
Overcurrent Cycles
Peak For
ward Surge Current I
FSM
(A)
I
FSM
Rating
T
C
I
F(AV)
Characteristics
Case Temperature Tc (
C)
0
150
2
3
Average Forward Current I
F(AV)
(A)
T
C
I
F(AV)
Characteristics
Case Temperature Tc (
C)
Average Forward Current I
F(AV)
(A)
100
0
1
2
3
4
5
50
70
90
110
130
150
110
120
130
140
t / T=1/6
t / T=1/2
D.C.
1
t / T=1/3, Sinewave
I
F(AV)
P
F
Characteristics
Average Forward Current I
F(AV)
(A)
0
3
8
12
Forward Power Dissipation P
F
(W)
I
F(AV)
P
F
Characteristics
Average Forward Current I
F(AV)
(A)
Forward Power Dissipation P
F
(W)
0
0
5
10
15
20
0
1
2
3
4
5
1
2
t / T=1/6
t / T=1/2
D.C.
D.C.
4
Tj
=150
C
T
t
t / T=1/3, Sinewave
16.9
(13.5)
8.4
0.8
3.9
4.0
10.0
2.2
2.6
4.2
2.8
1.35
0.85
5.08
0.45
3.3
Tj
=150
C
T
t
t / T=1/6
t / T=1/3, Sinewave
t / T=1/2
t / T=1/6
t / T=1/3
D.C.
t / T=1/2
Sinewave
Ultra-Fast-Recovery Rectifier Diodes
50Hz
Half-cycle Sinewave
Single Shot
With
Heatsink
Fig.
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
A
Fig.
max per
chip
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