Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
0
1
2
3
4
0
8
6
4
2
I
C
(A)
V
CE
(V)
0.01
0.05 0.1
1
0.5
5
8
500
100
30
50
h
FE
I
C
(A)
(V
CE
= 4V)
0.01
0.05 0.1
1
0.5
5 8
500
100
50
30
h
FE
I
C
(A)
(V
CE
= 4V)
0.01
0.05 0.1
1
0.5
5 10
30
20
10
0
f
T
(
MHz
)
I
E
(A)
0.0002
0.01
0.001
0.1
1
10
100
50
10
1
5
0.1
0.5
0.05
j-a
(
C/
W
)
t (sec)
(V
CE
= 12V)
0
50
100
150
0
40
30
20
10
P
C
(W)
Ta (
C)
3
5
10
50
200
100
20
10
1
0.1
0.5
5
I
C
(A)
V
CE
(V)
0
0.5
1.0
1.5
0
8
6
2
4
I
C
(A)
V
BE
(V)
5
10
50 100
500
2000
1000
0
2
1
V
CE
(sat)
(V)
I
B
(mA)
I
B
= 10mA
25mA
50mA
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
100
100
2
200
20
0
2
Without heatsink
With infinite heatsink
Tc = 55C
25C
75C
125C
Ic = 1A
Ic = 3A
Ic = 5A
1m
sec
10
msec
100
msec
D.C
(Tc
= 2
5C
)
Tc = 125C
75C
25C
55C
Typ
75m
A
100m
A
150m
A
200mA
300m
A
Ta = 25C
Single Pulese
NO FIN (Ta
= 25C)
Symbol
Ratings
Unit
(Ta=25C)
(Ta=25C)
V
CBO
120
Symbol
Test Conditions
Ratings
Unit
I
CBO
12
V
CC
(V)
4
R
L
(
)
3
I
C
(A)
10
V
BB1
(V)
5
V
BB2
(V)
30
I
B1
(mA)
30
I
B2
(mA)
1.0
t
on
(
s)
2.0
t
stg
(
s)
0.5
t
f
(
s)
A
V
CB
= 120V
10max
I
EBO
A
V
EB
= 6V
10max
V
CEO
V
I
C
= 50mA
100min
h
FE
V
CE
= 4V, I
C
= 3A
70min
V
CE
(sat)
V
I
C
= 4A, I
B
= 0.4A
0.3max
V
CEO
V
V
100
V
EBO
V
6
I
C
A
8 (pulse 12)
I
B
A
3
P
C
W
35 (Tc=25C)
Tj
C
150
Tstg
C
55 to +150
s
I
C
-- V
CE
Characteristics (typ.)
s
P
C
-- Ta Derating
s
I
C
-- V
BE
Temperature Characteristics (typ.)
s
h
FE
-- I
C
Characteristics (typ.)
s
h
FE
-- I
C
Temperature Characteristics (typ.)
s
f
T
-- I
E
Characteristics (typ.)
s
j-a
-- t Characteristics
s
Safe Operating Area (single pulse)
s
V
CE
(sat) -- I
B
Characteristics (typ.)
Power Transistor FN812
60
Typ
a) Type No.
b) Lot No.
(Unit: mm)
External Dimensions
FM20 (full-mold)
B C E
C 0.5
16.9
(13.5)
8.4
0.8
3.9
4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54
2.54
0.45
3.3
a
b
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