162
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode
Application : Chopper Regulator
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
SAH02
30
30
10
3
0.5
800(Ta=25C)
125
40 to +125
Unit
V
V
V
A
A
mW
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
f
T
C
OB
SAH02
10
max
10
max
30
min
100
min
150
min
0.3
max
100
typ
45
typ
Unit
A
A
V
V
MHz
pF
Conditions
V
CB
=30V
V
EB
=10V
I
C
=10mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=0.5A
I
C
=0.5A, I
B
=20mA
V
CE
=12V, I
E
=0.3A
V
CB
=10V, f=1MHz
SAH02
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
FE
I
C
Temperature Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
P c T a Derating
0
0
1
2
3
1
2
3
6
4
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
I
B
= 3 m A
1 0 0 m A
2 0 m A
1 0 m A
1 5 m
A
5 m A
5 m A
Safe Operating Area (Single Pulse)
3
1 0
5
5 0
0 . 0 3
0 . 1
0 . 0 5
1
5
0 . 5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
1ms
10ms
Without Heatsink
Natural Cooling
0 . 3
1 0 0
3 0 0
1 0
1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
1 . 0
0 . 5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
G l a s s e p o x y s u b s t r a t e
( 9 5 x 6 9 x 1 . 2 m m )
N a t u r a l C o o l i n g
0
3
1
2
0
1 . 5
0 . 5
1 . 0
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 2 V )
125C (Case Temp)25C (Case Temp)
30C (Case Temp)
D i o d e I
F
V
F
Characteristics
0
3
1
2
0
1 . 0
0 . 5
F o r w a r d V o l t a g e V
F
( V )
Forward Current I
F
(A)
( V
C E
= 2 V )
0 . 0 1
0 . 0 5
0 . 1
0 . 5
1
3
100
500
1000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
1 2 5 C
3 0 C
2 5 C
125C
30C
25C
0 . 1
1
0 . 5
3
1.0
0.8
0.6
0.4
0.2
0
Switching Time
t
on
t
stg
t
f
(
s)
C o l l e c t o r C u r r e n t I
C
( A )
t
s t g
t
o n
t
f
V
C C
1 2 V
I
B 1
= I
B 2
= 3 0 m A
t
o n
t
s t g
t
f
I
C
Characteristics (Typical)
V
CE
(sat)I
B
Temperature Characteristics (Typical)
0
1.0
1.5
0.5
300
10
100
50
5
1
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
1 2 5 C
2 5 C
3 0 C
( I
C
= 0 . 5 A )
1 0 0
s
External Dimensions PS Pack
2.54
0.25
1.4
0.2
3.6
0.2
6.3
0.2
8.0
0.5
1.0
0.3
3.0
0.2
9.8
0.3
0~0.1
0.25
4.32
0.2
0.89
0.15
4.8
max
6.8
max
4.0
max
a
b
1
2
3
4
0.75
+0.15 -0.05
0.3
+0.15 -0.05
2
1
3
4
Equivalent circuit
V
R
I
R
=100
A 30 min V
V
F
I
F
=0.5A 0.55 max V
t r r
I
F
=100mA 15 typ
ns
Weight : Approx 0.23g
a. Type No.
b. Lot No.
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