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Электронный компонент: SDH03

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168
NPN
PNP
NPN
NPN
PNP
PNP
NPN
PNP
I
C
-V
CE
Characteristics (Typical)
I
C
-V
BE
Temperature Characteristics (Typical)
h
FE
-I
C
Characteristics (Typical)
h
FE
-I
C
Temperature Characteristics (Typical)
Characteristic curves
SDH03
(T
a
=25
C)
Symbol
Unit
V
CBO
100
60
V
V
CEO
100
60
V
V
EBO
6
6
V
I
C
1.5
1.5
A
I
CP
2.5 (PW
1ms, D
u
100%)
2.5 (PW
1ms, D
u
10%)
A
I
B
0.1
0.1
A
P
T
3 (T
a
=25
C)
W
T
j
150
C
T
stg
40 to +150
C
ja
41.6
C/W
Specification
NPN
PNP
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
6
V
CE
(V)
I
C
(A)
I
B
=10mA
2mA
4mA
1.2mA
0.6mA
0.4mA
0.3mA
2
6
15
16
11
12
13
3
7
4
8
14
9
10
1
5
R
3
R
1
R
2
R
4
10000
5000
1000
500
100
0.03 0.05
0.1
0.5
1
2.5
h
FE
(V
CE
=4V)
I
C
(A)
typ
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
I
C
(A)
V
BE
(V)
(V
CE
=4V)
T
a
=125
C
75
C
25
C
30
C
6
5
4
3
2
1
0
0
0.5
2.5
2.0
1.5
1.0
V
CE
(V)
I
C
(A)
I
B
=5mA
1.2mA
1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
0.3mA
2mA
10000
(V
CE
=4V)
5000
1000
500
100
50
30
0.03
0.05
0.1
0.5
1
2.5
I
C
(A)
h
FE
Typ
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
V
BE
(V)
I
C
(A)
(V
CE
=4V)
T
a
=125
C
75
C
25
C
30
C
PNP + NPN Darlington
H-bridge
R
3
: 4k
typ
R
4
: 100
typ
R
1
: 4k
typ
R
2
: 200
typ
(V
CE
=4V)
10000
5000
1000
500
100
0.03 0.05
0.1
0.5
1
2.5
h
FE
I
C
(A)
T
a
=125
C
75
C
25
C
30
C
10000
(V
CE
=4V)
5000
1000
500
100
50
0.03
0.1
0.5
1
2.5
I
C
(A)
h
FE
0.05
T
a
=125
C
75
C
25
C
30
C
External dimensions
E
SD
Absolute maximum ratings
s
Equivalent circuit diagram
169
NPN
PNP
NPN
PNP
NPN
PNP
V
CE
(sat)-I
B
Characteristics (Typical)
V
CE
(sat)-I
C
Temperature Characteristics (Typical)
Safe Operating Area (SOA)
Characteristic curves
SDH03
(T
a
=25
C)
NPN
PNP
Symbol
Specification
Unit
Conditions
Specification
Unit
Conditions
min
typ
max
min
typ
max
I
CBO
10
A
V
CB
=100V
10
A
V
CB
=60V
I
EBO
3
mA
V
EB
=6V
3
mA
V
EB
=6V
V
CEO
100
V
I
C
=10mA
60
V
I
C
=10mA
h
FE
2000
12000
V
CE
=4V, I
C
=1A
2000
12000
V
CE
=4V, I
C
=1A
V
CE
(sat)
1.3
V
I
C
=1A, I
B
=2mA
1.4
V
I
C
=1A, I
B
=2mA
V
BE
(sat)
2.2
V
2.2
V
3
2
1
0
0.1
0.5
1
5
10
50
100
I
C
=2A
I
C
=1A
I
C
=0.5A
V
CE
(sat) (V)
I
B
(mA)
50
10
5
1
5
1
10
100
500 1000
50
ja
(
C / W)
PW (mS)
5
1
0.5
0.1
0.05
0.03
3
5
10
50
100
V
CE
(V)
I
C
(A)
Single Pulse
Without Heatsink
T
a
=25
C
100
s
1ms
10ms
3
2
1
0
0
4
3
2
1
50
100
150
P
T
(W)
Ta (
C)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
3
2
1
0
0.1
0.5
1
5
10
50
V
CE
(sat) (V)
I
B
(mA)
I
C
=2A
I
C
=1A
I
C
=0.5A
5
1
0.5
0.1
0.05
3
5
10
50
100
V
CE
(V)
I
C
(A)
1ms
10
ms
100
s
Single Pulse
Without Heatsink
T
a
=25
C
50
10
5
1
1
5
10
50
100
500
1000
ja
(
C / W)
PW (mS)
3
2
1
0
0.2
0.5
1
2.5
(I
C
/ I
B
=1000)
V
CE
(sat) (V)
I
C
(A)
Ta=125
C
75
C
25
C
30
C
3
2
1
0
I
C
(A)
(I
C
/ I
B
=1000)
V
CE
(sat) (V)
0.2
0.5
1
2.5
T
a
=30
C
25
C
75
C
125
C
Electrical characteristics
P
T
-T
a
Characteristics
j-a
-PW Characteristics
NPN
PNP