170
Characteristic curves
SDK02
(T
a
=25
C)
Symbol
Ratings
Unit
V
DSS
60
V
V
GSS
10
V
I
D
2
A
I
D(
pulse
)
3 (PW
100
s, D
u
1%)
A
I
F
1.5
A
I
FSM
2.5 (PW
0.5ms, D
u
10%)
A
V
R
120
V
P
T
3 (Ta=25
C, 4-circuit operation)
W
Tch
150
C
Tstg
40 to +150
C
(T
a
=25
C)
Symbol
Unit
Conditions
V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
I
GSS
500
nA
V
GS
=
10V
I
DSS
250
A
V
DS
=60V, V
GS
=0V
V
TH
1.0
2.0
V
V
DS
=10V, I
D
=250
A
Re
(
yfs
)
1.2
S
V
DS
=10V, I
D
=1.0A
0.19
0.24
V
GS
=10V, I
D
=1.0A
0.25
0.30
V
GS
=4V, I
D
=1.0A
Ciss
400
pF
V
DS
=25V,
Coss
160
pF
f=1.0MHz,
Crss
35
pF
V
GS
=0V
V
SD
1.0
1.5
V
I
SD
=2A, V
GS
=0V
t
rr
150
ns
I
SD
=
100mA
Symbol
Unit
Conditions
V
R
120
V
I
R
=10
A
V
F
1.6
V
I
F
=1A
I
R
100
V
R
=120V
t
rr
100
ns
I
F
=
100mA
Specification
min
typ
max
Specification
min
typ
max
R
DS(ON)
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
N-channel
With built-in flywheel diode
External dimensions
E
SD
Absolute maximum ratings
Electrical characteristics
q
Diode for flyback voltage absorption
s
Equivalent circuit diagram
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