0
1
4
5
2
6
3
s
I
C
-- V
CE
Characteristics (typ.)
0
2
I
C
(A)
V
CE
(V)
1
3
0.01
0.1
4
0.5
1
s
h
FE
-- I
C
Temperature Characteristics
50
100
h
FE
I
C
(A)
3000
1000
500
0
0.5
1.0
1.5
2.0
s
t
on
t
stg
t
f
-- I
C
Characteristics (typ.)
0.1
0.5
5
1
10
t
on
t
stg
t
f
(
S)
Ic (A)
50
1
5
10
50
s
Safe Operating Area (single pulse)
0.5
0.1
1
5
I
C
(A)
V
CE
(V)
(per element)
I
B
=
1mA
2mA
3mA
V
CC
=
12V
I
B
=
5mA
I
B
=
0A
(V
CE
=
4V)
0
50
150
100
s
P
T
-- Ta Derating
0
10
P
T
(W)
Ta (C)
20
10ms
1ms
0
2
1
3
0
0.5
1
5
s
V
CE
(sat) -- I
C
Temperature Characteristics
V
CE
(sat)
(V)
I
C
(A)
1
10
100
400
s
V
CE
(sat) -- I
B
Temperature Characteristics
0
0.25
0.5
V
CE
(sat)
(V)
I
B
(mA)
I
C
/I
B
=
100
(I
C
=
0.5A)
Ta
=
125C
75C
25C
40C
Ta
=
125C
75C
25C
40C
1
10
100
1000
s
j-a
-- t Characteristics
1
5
10
j-a
(C/W)
t (ms)
20
Single pulse
30m
A
12m
A
8mA
5mA
Ta
=
125C
75C
25C
40C
t
stg
t
on
Without heatsink
With infinite heatsink
Without heatsink
natural air cooling
R
B
3
2
4
5
6
7
8
9
10
1
R
BE
Power Transistor Array STA415A
64
Symbol
Ratings
Unit
(Ta=25C)
(Ta=25C)
V
CBO
35
5
Symbol
Test Conditions
Ratings
Unit
I
CBO
A
V
CB
= 30V
10max
I
EBO
mA
V
EB
= 6V
2.7max
V
CEO
V
I
C
= 25mA
31 to 41
h
FE
V
CE
= 4V, I
C
= 0.7A
400min
V
CE
(sat)
V
V
I
C
= 0.5A, I
B
= 5mA
I
C
= 1A, I
B
= 5mA
0.2max
0.5max
V
FEC
R
B
R
BE
V
k
I
FEC
= 2A
2.5max
800
120
2.0
0.4
Es/b
mJ
L = 10mH, single pulse
50min
V
CEO
V
V
36
5
V
EBO
V
6
I
C
A
2 (pulse 3*)
4 (Ta = 25C)
18 (Tc = 25C)
I
B
mA
30
P
T
W
W
Tj
C
150
Tstg
C
55 to +150
* P
W
1ms, Duty 25%
12
V
CC
(V)
12
R
L
(
)
1
I
C
(A)
10
V
BB1
(V)
5
V
BB2
(V)
5
I
B1
(mA)
0
I
B2
(mA)
1.0
t
on
(
s)
8.5
t
stg
(
s)
2.5
t
f
(
s)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
t
f
Equivalent Circuit Diagram
a) Type No.
b) Lot No.
(Unit: mm)
9 2.54=22.86
0.05
a
b
(2.54)
25.25
0.2
9.0
0.2
2.3
0.2
11.3
0.2
3.
5
0.5
0.5
0.15
0
0.3
1.0
0.25
C1.5
0.5
4.0
0.2
0.5
0.15
1.2
0.2
1
3
2
4
E
B C B
5
6
7
10
C
B C
E
8
9
B C
0
0.3
External Dimensions
STA4 (LF412)
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