Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
0
1
2
6
5
3
4
0
5
4
3
2
I
C
(A)
V
CE
(V)
1
8
7
6
0
0.25
0.75
0.5
0.01
0.1
1
5
V
CE
(sat)
(V)
I
C
(A)
0.01
0.1
10
1
30
50
h
FE
I
C
(A)
2000
1000
500
100
0
1
2
3
0.1
0.5
1
t
on
t
stg
t
f
(
S)
Ic
(A)
10
5
(Tc = 25
C)
0
0.5
1.0
1.5
0
7
6
5
4
3
2
1
I
C
(A)
V
BE
(V)
I
B
=
1mA
3mA
V
CC
=
12V
I
B1
=
I
B2
=
30mA
I
C
/I
B
=
100
(V
CE
=
1V)
(V
CE
=
4V)
0
50
150
100
0
10
5
P
T
(W)
Ta
(C)
20
15
Ta
=
55C
25C
75C
150C
0
0.25
0.75
0.5
1
10
100
1000
V
CE
(sat)
(V)
I
B
(mA)
I
C
=
1.2A
Ta
=
150C
75C
25C
55C
Ta
=
150C
75C
25C
55C
0.0001
1
0.1
0.01
0.001
10
100
1000
0.1
0.5
1
5
10
50
j-a
(C/W)
t
(s)
100
Single pulse
10mA
30mA
20mA
5mA
Ta
=
150C
75C
25C
55C
t
f
t
on
Without heatsink
With infinite heatsink
t
stg
Dual
transistor
operated
Single
transistor
operated
Symbol
Ratings
Unit
(Ta=25C)
(Ta=25C)
V
CBO
115
10
Symbol
Test Conditions
Ratings
Unit
I
CBO
A
V
CB
= 105V
10max
I
EBO
A
V
EB
= 6V
10max
V
CEO
V
I
C
= 50mA
105 to 125
h
FE
V
CE
= 1V, I
C
= 1A
400 to 1500
V
CE
(sat)
V
I
C
= 1.2A, I
B
= 12mA
0.12max
V
FEC
V
I
FEC
= 6A
1.5max
Es/b
mJ
L = 10mH, single pulse
45min
V
CEO
V
V
115
10
V
EBO
V
6
I
C
A
6 (pulse
10)
3.2 (Ta=250C)
18 (Tc=25C)
I
B
A
1
P
T
W
W
Tj
C
150
Tstg
C
55 to +150
12
V
CC
(V)
12
R
L
(
)
1
I
C
(A)
10
V
BB1
(V)
5
V
BB2
(V)
30
I
B1
(mA)
30
I
B2
(mA)
0.2
t
on
(
s)
5.7
t
stg
(
s)
0.4
t
f
(
s)
3
2
4
8
7
9
s
I
C
-- V
CE
Characteristics (typ.)
s
V
CE
(sat) -- I
C
Temperature Characteristics (typ.)
s
V
CE
(sat)
-- I
B
Temperature Characteristics (typ.)
s
h
FE
-- I
C
Temperature Characteristics (typ.)
s
t
on
t
stg
t
f
-- I
C
Characteristics
s
I
C
-- V
BE
Temperature Characteristics (typ.)
s
j-a
-- t Characteristics
s
P
T
-- Ta Derating
Power Transistor Array STA463C
66
Equivalent Circuit Diagram
a) Type No.
b) Lot No.
(Unit: mm)
9 2.54=22.86
0.05
a
b
(2.54)
25.25
0.2
9.0
0.2
2.3
0.2
11.3
0.2
4.7
0.5
0.5
0.15
1.0
0.25
C1.5
0.5
4.0
0.2
0.5
0.15
1.2
0.2
1
3
2
4
B C E
5
6
7
10
B
8
9
C E
External Dimensions
STA4 (LF400B)