s Features
q
Repetitive peak off-state voltage: V
DRM
=200, 400, 600V
q
Average on-state current: I
T(AV)
=5A
q
Gate trigger current: I
GT
=15mA max
sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Tj= 40 to +125
C, R
GK
=1k
50Hz Half-cycle sinewave, Continuous current, Tc =96
C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
C
200
TF521M
TF541M
TF561M
600
200
600
300
700
300
700
400
V
V
V
A
A
A
A
V
V
W
W
C
C
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G (AV)
Tj
Tstg
400
500
500
5.0
7.8
80
2.0
10
5.0
5.0
0.5
40 to +125
40 to +125
V
V
mA
V
mA
V/
S
S
C/ W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
mA
I
DRM
V
TM
I
GT
tq
I
RRM
V
GT
V
GD
I
H
dv/dt
Rth
3.0
4.0
50
30
3.0
0.1
1.4
1.5
15
2.0
2.0
Tj=125
C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k
T
C
=25
C,
I
TM
=10A
V
D
=6V, R
L
=10
, T
C
=25
C
R
GK
=1k
, Tj=25
C
Junction to case
Tc= 25
C
V
D
=1/2
V
DRM
, Tj=125
C,
R
GK
=1k
, C
GK
=0.033
F
V
D
=1/2
V
DRM
, Tj=125
C,
R
GK
=1k
10
1.7
0.2
3.0
0.2
8.8
0.2
3.75
0.1
1.35
0.15
2.5
0.1
2.5
0.1
+
0.2
0.1
0.65
10.4max
16.7max
5.0max
2.1max
12.0
min
4.0
max
TF521M, TF541M, TF561M
TO-220 5A Thyristor
Weight: Approx. 2.6g
External Dimensions
(Unit: mm)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
(1) (2) (3)
a. Part Number
b. Lot Number
a
b
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
0.3
0.5
1
100
50
10
5
1.0
2.0
4.0
3.0
On-state voltage
v
T
( V )
On-state current
i
T
(A)
v
T
i
T
Characteristics (max)
0
20
40
60
80
100
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
1
5
10
50
100
Gate current
i
GF
(A)
0
1
2
3
0
2
4
6
8
10
12
Gate voltage
v
GF
(V)
Gate Characteristics
0
0
1
2
10
20
30
1 cycle
10 ms
I
TSM
0
0
1
2
4
5
6
7
8
3
2
6
4
8
Average on-state current I
T(AV)
(A)
I
T(AV )
P
T(AV)
Characteristics
60
90
120
150
180
DC
0
0
25
100
75
50
150
125
6
8
4
2
Average on-state current I
T(AV)
(A)
I
T(AV)
Tc Ratings
60
90
150
120
180
DC
25
C
75
C
125
C
i
gt
t
w
50%
20
C
25
C
75
C
125
C
1
10
10
2
10
3
10
4
Pulse width
t
w (
s)
0.05
0.1
1
30
10
0.5
0.5
1
10
10
2
10
3
10
4
Pulse width
t
w (
s)
0.05
0.1
10
1
30
40
0
50
75
100
25
125
0
10
20
30
Junction temperature Tj (
C)
Holding current I
H
(mA)
I
H
temperature Characteristics
(Typical)
1
10
10
2
10
3
10
4
t, Time (ms)
0.1
1
10
40
0
50
75
100
25
125
0.8
0.6
0.4
0.2
0
1.0
Junction temperature Tj (
C)
0
2
4
8
10
6
12
40
0
75
100
25
50
125
Junction temperature Tj (
C)
Average on-state power P
T
( AV
)
(W
)
Case temperature T
C
(
C)
11
(R
GK
=1k
)
(V
D
=6V, R
L
=10
)
(V
D
=6V, R
L
=10
)
TF521M, TF541M, TF561M
Tj =125
C
Tj = 25
C
Tj=125
C
Initial junction temperature
See graph at the upper right
P
G
M
=5
W
Gate trigger current I
GT
(mA)
Gate trigger voltage V
GT
(V)
T
j
=
40
C
T
j
=25
C
T
j
=
20
C
50Hz Half-cycle sinewave
: Conduction angle
180
0
=30
50Hz Half-cycle sinewave
: Conduction angle
180
0
=30
Pulse trigger temperature
Characteristics
v
gt
(Typical)
v
gt
V
GT
DC gate trigger
voltage at 25
C
( )
( )
Gate trigger voltage
at Ta and
t
w
T
C
= 40
C
v
gt
50%
t
w
20
C
Pulse trigger temperature
Characteristics
i
gt
(Typical)
i
gt
I
GT
DC gate trigger
current at 25
C
( )
( )
Gate trigger current
at Ta and
t
w
T
C
= 40
C
Gate trigger voltage V
GT
(V)
V
GT
temperature Characteristics
(Typical)
Gate trigger current I
GT
(mA)
I
GT
temperature Characteristics
(Typical)
Transient thermal resistance
r
th
(
C/
W
)
Transient thermal resistance
Characteristics
(Junction to case)
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