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Электронный компонент: TF561S-A

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s Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
Average on-state current: I
T(AV)
=5A
q
High sensitive Gate trigger current: I
GT
=0.2mA max
q
Isolation voltage: V
ISO
=1500V (50Hz Sine wave, RMS )
sAbsolute Maximum Ratings
sElectrical Characteristics
Parameter
Symbol
Ratings
Unit
Conditions
V
Tj= 40 to +125
C, R
GK
=470
50Hz Half-cycle sinewave, Continuous current, Tc =88
C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
TF541S-A
TF561S-A
600
600
700
700
400
V
V
V
A
A
A
A
V
V
W
W
C
C
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G (AV)
Tj
Tstg
400
500
500
5.0
7.8
80
2.0
10
5.0
5.0
0.5
40 to +125
40 to +125
V
V
ISO
1500
V
V
mA
V
mA
V/
S
S
C/W
Parameter
Symbol
Ratings
typ
min
max
Unit
Conditions
mA
mA
I
DRM
V
TM
I
GT
tq
I
RRM
V
GT
V
GD
I
H
dv/dt
Rth
0.03
4.0
20
30
4.0
0.1
1.4
1.5
0.2
2.0
2.0
Tj=125
C,
V
D
=V
DRM
(V
RRM
), R
GK
=1k
T
C
=25
C,
I
TM
=10A
V
D
=6V, R
L
=10
, T
C
=25
C
R
GK
=1k
, Tj=25
C
Junction to case
Tc=25
C
V
D
=1/2
V
DRM
, Tj=125
C,
R
GK
=1k
, C
GK
=0.033
F
V
D
=1/2
V
DRM
, Tj=125
C,
R
GK
=1k
20
TF541S-A,TF561S-A
TO-220F 5A High sensitive Thyristor
16.9
0.3
8.4
0.2
0.8
0.2
3.9
0.2
4.0
0.2
10.0
0.2
4.2
0.2
1.35
0.15
1.35
0.15
2.4
0.2
2.2
0.2
3.3
0.2
0.85
+
0.2
0.1
+
0.2
0.1
C 0.5
2.8
13.0
m
in
2.54
2.54
0.45
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
a
b
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%