50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
AK90HB120/160
THYRISTOR MODULE
UL;E76102
M
93.5max
26max
13
80
16.5
23
23
3-M5
110TAB
2-6.5
3
2
1
30max
21
K1
G1
K2
G2
Unit
A
Symbol
Item
Conditions
Ratings
90
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Current
Single phase, half wave, 180
conduction, Tc88
Tc
88
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage
Forward
1
2
cycle, 50Hz/60Hz, peak value, non-reqetitive
Value for one cycle of surge current
A
200
A
1650/1800
A
15000
10
A
2
S
W
3
V
RGM
Peak Gate Voltage
Reverse
di/dt
Critical Rate of Rise of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
V
ISO
Isolation Breakdown Voltage
R.M.S.
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M6
Terminal
M5
A.C. 1 minute
Recommended Value 2.5-3.9
25-40
Recommended Value 1.5-2.5
15-25
Typical Value
3
W
A
10
V
5
V
200
A/
s
2500
V
-40 to 125
-40 to 125
4.7
48
2.7
28
170
N
fB
g
Symbol
Item
Conditions
Ratings
30
Unit
I
DRM
Repetitive Peak Off-State Current, max.
at V
DRM
, Single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
/V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 270A, Tj
125 Inst. measurement
Tj
25I
T
1AV
D
6V
mA
1.40
V
100/2
Tj
125V
D
1
2
V
DRM
I
T
90AI
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
0.25
mA/V
V
10
Tj
125V
D
2
3
V
DRM
Exponential wave.
Tj
25
I
L
Lutching Current, typ.
Rth
j-c Thermal Impedance, max.
Tj
25
Junction to case, per
1
2
Module
500
s
V/
s
50
mA
100
mA
0.30
Junction to case, per 1 Module
0.15
/W
Electrical Characteristics
Symbol
Item
AK90GB120
Ratings
AK90GB160
Unit
1200
1600
V
V
DRM
Repetitive Peak Off-State Voltage
K1
A2K1
A1K2
G1
K2
G2
1
2
3
Power ThyristorModule AK90HB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available.
Isolated mounting base
I
T
AV
90A, I
T
RMS
200A, I
TSM
1100A
di/dt 200 A/
s
dv/dt 500V/
s
Applications
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
Maximum Ratings
Tj25 unless otherwise specified
SanRex
AK90HB120/160
Gate Characteristics
Gate CurrentmA
Gate Voltage
V
Peak Forward Gate Voltag10V
Pe
ak G
ate
Po
we
r1
0W
Ave
ra
ge G
ate
P
ow
er3
W
Peak Gate Current
3
A
Maximum Gate Voltage that will not trigger any unit0.25V
-30
125
25
On-State Voltage max
On-State VoltageV
On-State Current
A
Tj125
: Conduction Angle
360
2
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Power Dissipation
W
Per one element
D.C.
30
60
120
180
90
: Conduction Angle
360
2
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-State CurrentA
Allowable Case Temperature
Per one element
D.C.
30
60
90
120
180
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
60Hz
50Hz
Tj25 start
Per one element
Time
t
sec
Transient Thermal Impedance
Transient Thermal Impedance
j-c
/
W
Junction to Case
Per one element
Output Current
WBidirectional connection
Ambient Temperature
Output CurrentA
Total Power Dissipation
W
Allowable Case Temperature
ld(Ar.m.s)
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
Conduction Angle 180
W3
W1
IdRMS
RMS On-State CurrentA
Ambient Temperature
Three phase
bidiretional connection
RMS On-State Current Vs
Allowable Case Temperature
Allowable Case Temperature
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
30
60
90
120
180
IdAr.m.s.
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