67
GH-038
HYBRID GATE DRIVER IC FOR IGBT
SanRex Hybrid Gate Driver IC for IGBT
High Voltage isolation by Photo Coupler
Enable to drive IGBT up to dual 300A module
Operate with single power source
Support to high-density system design
Built-in opto coupler input resistor
330
Maximum Ratings
Unless otherwise Tj
25
Equivalent Circuit
Symbol
Item
V
CC
Supply Voltage
Conditions
Ratings
Min.
Typ.
Max.
Unit
V
23.0
26.0
28.0
V
OH
Forward Bias Output Voltage
V
CC
26.0V
V
16.0
18.0
19.0
V
RB
Reverse Bias Supply Voltage
V
CC
26.0V
V
0
7.0
0
8.0
0
9.0
V
FIN
Photo Coupler Input Voltage
V
0
5.0
0
7.0
I
F
Photo Coupler Input Current
V
FIN
5.0V
mA
0
9.0
10.6
12.2
I
g
1
Output Forward Current
PW
2
s
Dutycycle
0.05
A
0
4.0
0
6.0
I
g
2
Output Reverse Current
PW
2
s
Dutycycle
0.05
A
0
4.0
0
6.0
t
PLH
Switching Time-High side
V
CC
26.0V
I
F
10mA
s
0
1.5
t
PHL
Switching Time-Low side
V
CC
26.0V
I
F
10mA
s
0
1.5
t
r
Rise Time
V
CC
26.0V
I
F
10mA
s
0
1.0
t
f
Fall Time
V
CC
26.0V
I
F
10mA
s
0
1.0
5k
10k
dv/dt
Common Mode Transient immunity
V/ s
Visc
Input
Output Isolation Voltage
AC50/60H
Z
1minute
V
Topr
Operational Ambient Temperature
Tstg
Storage Temperature
AC2500
25
80
40
125
The model name is indicated on the back of the product.
68
GH-038
Examble of Application
1
To assure required voltage the capacitor
>10
F
hase to be connected as close to the Driver IC as possible.
2
For the value of gate resistor, the resistance value described in IGBT Module specification is recommended. The gate resistance
should be determined at less than 6A of peak output current judging from signal delay time and surge voltage.
Switching wave form
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