SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK
(PD,PE,KK)
55GB
THYRISTOR MODULE
UL;E76102
M
93.5MAX
26MAX
30MAX
13
21
K1
G1
80
110TAB
16.5
23
3
~
+
2
1
23
3-M5
2-
6.5
K2
G2
Unit
A
markThyristor and Diode part. No markThyristor part
Symbol
Item
Conditions
Ratings
55
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Current
Single phase, half wave, 180
conduction, Tc89
Single phase, half wave, 180
conduction, Tc89
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage (Forward)
1
2
cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
A
86
A
1000/1100
A
5000
10
A
2
S
W
3
V
RGM
Peak Gate Voltage (Reverse)
di
dt
Critical Rate of Rise of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt
0.1A/s
V
ISO
Isolation Breakdown Voltage (R.M.S.)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M6
Terminal
M5
A.C.1minute
Recommended Value 2.5-3.9
25-40
Recommended Value 1.5-2.5
15-25
3
W
A
10
V
5
V
150
A/
s
2500
V
-40 to 125
-40 to 125
4.7
48
2.7
28
170
N
fB
g
Symbol
Item
Conditions
Ratings
10
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, single phase, half wave, Tj
125
at V
DRM
, single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv
dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 165A, Tj
125 Inst. measurement
Tj
25I
T
1AV
D
6V
mA
10
mA
1.35
V
100/3
Tj
125V
D
1
2
V
DRM
I
T
55AI
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
0.25
mA/V
V
10
Tj
125, V
D
2
3
V
DRM
, Exponential wave.
Tj
25
I
L
Lutching Current, typ.
Rth
j-cThermal Impedance, max.
Tj
25
Junction to case
500
s
V/
s
50
mA
100
mA
0.50
/W
Electrical Characteristics
Maximum Ratings
Symbol
Item
PK55GB40
PD55GB40
KK55GB40
PE55GB40
Ratings
PK55GB80
PD55GB80
KK55GB80
PE55GB80
Unit
V
RRM
Repetitive Peak Reverse Voltage
400
800
V
480
960
V
400
800
V
V
RSM
V
DRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Power Thyristor/Diode Module PK55GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
I
T(AV)
55A, I
T(RMS)
86A, I
TSM
1100A
di/dt 150 A/
s
dv/dt 500V/
s
Applications
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
K1
A2
K2
A1K2
G1
K2
G2
1
2
3
PK
K1
A2
K2
A1K2
K2
G2
1
2
3
PE
K1
A2
K2
A1K2
G1
K2
1
2
3
PD
K1
A2
A1
G1
K2
G2
1
2
1
KK
PK(PD,PE,KK)55GB
;;
125
25
-30
Peak Forward Gate Voltage10V
Pe
ak G
ate
Po
we
r1
0W
Ave
ra
ge G
ate
P
ow
er3
W
Peak Gate Current
3
A
Maximum Gate Voltage that will not trigger any unit0.25V
Gate Characteristics
Gate CurrentmA
Gate Voltage
V
Tj125
On-State VoltageV
On-State Voltage max
On-State Current
A
: Conduction Angle
360
2
D.C.
180
120
90
60
30
Per one element
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Power Dissipation
W
: Conduction Angle
360
2
D.C.
180
120
90
60
30
Per one element
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-State CurrentA
Allowable Case Temperature
= start
Per one element
60Hz
50Hz
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
-
-
-
Per one element
Junction to case
Transient Thermal Impedance
Time
t
sec
Transient Thermal Impedance
j-c
/
W
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
4
B2
W3
B6
W1
Conduction Angle 180
Output Current
WBidirectional connection
Output CurrentA
Ambient Temperature
Total Power Dissipation
W
Allowable Case Temperature
IdAr.m.s.
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
Rth:0.8/W
Rth:0.6/W
Rth:0.4/W
Rth:0.2/W
Rth:0.1/W
BTwo Pluse bridge connection
Ambient Temperature Ambient Temperature
BSix pulse bridge connection
Three phase
bidiretional connection
Total Power Dissipation
W
Allowable Case Temperature
IdAav.
IdAav.
IdAr.m.s.
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