ChipFind - документация

Электронный компонент: QCA200A40

Скачать:  PDF   ZIP
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200A40/60
TRANSISTOR MODULE
UL;E76102
M
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
QCA200A40 QCA200A60
Unit
V
CBO
Collector-Base Voltage
400
600
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
400
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
pw1ms
200
400
A
-I
C
Reverse Collector Current
200
A
I
B
Base Current
12
A
P
T
Total power dissipation
T
C
25
1250
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting
M6
Terminal
M6
Recommended Value 2.5-3.9
25-40
4.7
48
Recommended Value 2.5-3.9
25-40
4.7
48
N
m
(
fB)
Mass
Typical Value
470
g
15
15
33.0max
37.0max
30.0max
14.0
24.0max
25.0
3-M6
L=10max
AMP110
t=0.5
25.0
108max
4-6.5
63.0max
930.5
48
0.5
6.0
7.5
7.5
6.0
B
2
X
C
2
E
1
E
2
C
1
B
2
E
2
E
1
B
1
B
1
X
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
2.0
800
75
2.0
2.5
2.0
12.0
3.0
1.4
0.1
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
300
V
CEO
SUS
Collector Emitter
Sustaning Voltage
QCA200A40
QCA200A60
QCA200A40
QCA200A60
Ic
1A
V
450
400
V
CEX
SUS
Ic
40AI
B2
-8A
V
600
h
FE
DC Current Gain
Ic
200AV
CE
2V
Ic
200AV
CE
5V
100
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
200AI
B
2.7A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
200AI
B
2.7A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
0.3
Diode part
ts
tf
Vcc
300VIc200A
I
B1
4AI
B2
-4A
-Ic200A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
C1
B1
C2E1
B2
E2
B2X
QCA200 is a dual Darlington power transistor module which has series- connected high
speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
200AV
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200A40/60
Tj
125
Tj
25
Typical
V
CE
5V
V
CE
2V
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
V
CE
V
BE
Typical
Ic
120A
Ic
160A
Ic
200A
-
Ic
160A
Ic
200A
Ic
120A
Saturation Characteristics
Collector Current IcA
Collector-Emitter Voltage V
V
Base-Emitter Voltage V
BE
V
Pulse W
ide
100
s
50
0
s
IS
/B
Lim
ite
d
1m
s
10
m
s
P
T
Limited
Non-Repetitive
Tc
25
OCA200
A60
OCA200
A40
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Reverse Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj
125
IB2
-3A
IB2
-8A
OCA200
A60
OCA200
A40
Collector Current Derating Factor
Case Temperature
Derating Factor
%
IS/B L
imite
d
P
T
Lim
ite
d
=
Maximum
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Reverse Current -Ic
A
ton
ts
tf
Typical
Vcc
300V
IB1
4A
IB2
-4A
Tj
25
-
Collector Current Vs Switching Time
Collector Current IcA
Switching Time

t
on
t
f ts
s
Junction to Case
Max
50msec50sec
100sec50msec
-
-









Maximum Transient Thermal Impedance
Characteristics
Time
t
sec
Transient Thermal Impedance
j-c
/
W