B1
B2
E2
E2
C2E1
B2X
B1X
E1
C1
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200AA100
TRANSISTOR MODULE
UL;E76102
M
QCA200AA100 is a dual Darlington power transistor module with has series-connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction.
I
C
=200A, V
CEX
=1000V
Low saturation voltage for higher efficiency
High DC current gain h
FE
Isolated monuting base
Applications
Motor Control
VVVF
, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
QCA200AA100
Unit
V
CBO
Collector-Base Voltage
Emitter open
1000
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
1000
V
V
CEX
SUS
Collector-Emitter Sustaning Voltage
I
C
40AI
B2
-5A
1000
V
Emitterr-Base Voltage
V
V
EBO
Collector open
10
I
C
Collector Current
200
A
-I
C
Reverse Collector Current
200
A
I
B
Base Current
10
A
P
C
Collector-Emitter power dissipation
T
C
25
1560
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage(RMS)
A.C. 1minute
2500
V
Mounting Torque
M6
Recommended Value 2.5-3.9
25-40
4.7
48
N
m
(
fB)
Mass
Typical Value
675
g
46.5
25
25
31.5
3-M6
Tab110
t =0.5
27
34.5
NAME PLATE
15
E2
B2
B1
E1
930.2
90max.
31max.
70
0.2
B2X
B1X
113max
C2E1
E2
C
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max
4.00
500
75
2.5
3.5
3.0
15.0
3.0
1.8
0.08
0.35
Unit
I
CBO
Collector Cut-off Current
V
CB
1000V Emitter open
mA
I
EBO
Emitter Cut-off Current
V
EB
10V Collector open
mA
h
FE
D.C. Current Gain
Ic
200AV
CE
2.8V
100
Ic
200AV
CE
5V
V
CE(sat)
Collector-Emitter Sturation Voltage
Ic
200AI
B
4A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
200AI
B
4A
V
s
V
/W
ton
On Time
Storage Time
Fall Tjme
tstg
tf
Vcc
600VIc200A
I
B1
4AI
B2
-4A
-Ic200A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
(Diode forward voltage drop)
Thermal Impedance
(Junction to case)
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
QCA200AA100
Tj 125
Tj 25
V
CE
5V
V
CE
2.8V
Typical
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
v
BE
(sat)
v
CE
(sat)
Typical
Tj
125
I
B
4.0A
Tj
25
Saturation Characteristics
Collector Current IcA
Collector-Emitter Voltage V
V
Base-Emitter Voltage V
BE
V
3
Tj
25
50
s
10
0
s
20
0
s
Non-Repetitive
Single pulse
Pulse Wide
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj
25
I
B2
-8A
I
B2
-4A
Reverse Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
Second Breakdown Limit
Thermal Limit
Tj
125
Tj
25
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Reverse Current -Ic
A
Typical
I
B1
4A
I
B2
-4A
Vcc
600V
Tj
25
ts
ton
t f
-
Collector Current Vs Switching Time
Collector Current IcA
Switching Time
t
on
t
f ts
s
200ec100msec
Maximum
Transistor Part
100msec100sec
-
-
-
-
-
-
-
Transient Thermal Impedance
Time
t
sec
Transient Thermal Impedance
j-c
/
W
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