5
QCA50AA100
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
QCA50AA100
Unit
V
CBO
Collector-Base Voltage
1000
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
1000
V
Emitter-Base Voltage
V
V
EBO
7
I
C
Collector Current
50
A
I
C
Reverse Collector Current
50
A
I
B
Base Current
3
A
P
T
Total power dissipation
T
C
25
400
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting M6
Terminal M5
Recommended Value 2.5
3.9
25
40
4.7
48
Recommended Value 1.5
2.5
15
25
2.7
28
N m
f B
Mass
Typical Value
210
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
1.0
200
75
2.5
3.5
2.5
15.0
3.0
1.8
0.31
1.2
Unit
I
CBO
Collector Cut-off Current
V
CB
1000V
mA
I
EBO
Emitter Cut-off Current
V
EB
7V
mA
1000
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic
10A
I
B
3A
V
h
FE
DC Current Gain
Ic
50A
V
CE
2.8V
100
Ic
50A
V
CE
5V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
50A
I
B
1A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
50A
I
B
1A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
ts
tf
Vcc
600V
Ic
50A
I
B1
1A
I
B2
1A
Ic
50A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QCA50AA100 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
50A, V
CEX
1000V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
7
QCA50AA120
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
QCA50AA120
Unit
V
CBO
Collector-Base Voltage
1200
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
1200
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
50
A
I
C
Reverse Collector Current
50
A
I
B
Base Current
3
A
P
T
Total power dissipation
T
C
25
400
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting M6
Terminal
M5
Recommended Value 2.5
3.9
25
40
4.7
48
Recommended Value 1.5
2.5
15
25
2.7
28
N m
f B
Mass
Typical Value
210
g
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
1.0
300
75
3.0
3.5
2.5
15.0
3.0
1.8
0.31
1.2
Unit
I
CBO
Collector Cut-off Current
V
CB
1200V
mA
I
EBO
Emitter Cut-off Current
V
EB
10V
mA
1200
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic
10A
I
B
2A
V
h
FE
DC Current Gain
Ic
50A
V
CE
5V
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
50A
I
B
1A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
50A
I
B
1A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
ts
tf
Vcc
600V
Ic
50A
I
B1
1A
I
B2
1A
Ic
50A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
QCA50AA120 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
50A, V
CEX
1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
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