SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SBA500AA
THYRISTOR MODULE
138max
78max
600.2
281
281
601
48
1
60
0.2
13.5
13.5
K1
K2
K2
4
2
5
7
8
6
1
3
K1
G1
A2
A1
6-6.5
4-M4 depth8
4-M8 depth15
600.2
66max
47
1
31
8
Unit
A
Symbol
Item
Conditions
Ratings
500
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Current
Single phase, half wave, 180
conduction, Tc66
Single phase, half wave, 180
conduction, Tc66
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage
Forward
1
2
cycle, 50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
A
785
A
9.1/10.0
kA
416
15
kA
2
S
W
5
V
RGM
Peak Gate Voltage
Reverse
di/dt
Critical Rate of Rise of On-State Current
I
G
200mA
V
D
1
2
V
DRM
dI
G
/dt0.2A/s
V
ISO
Isolation Breakdown Voltage
R.M.S.
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M6
Terminal
M8
Terminal
M4
A.C. 1 minute
Recommended Value 2.5-3.9
(Recommended Value 25-40)
Recommended Value 8.8-10
(Recommended Value 90-105)
Recommended Value 1.0-1.4
Recommended Value 10-14)
Typical Value
5
W
A
10
V
5
V
200
A/
s
2500
V
-40 to 125
-40 to 125
4.7
(48)
11.0
(115)
1.5
(15)
1100
N
(fB)
N
(fB)
N
(fB)
g
Symbol
Item
Conditions
Ratings
150
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, Single phase, half wave, Tj
125
at V
DRM
, Single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
Gate Trigger Current, max.
V
GD
Non-Trigger Gate, Voltage. min.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
I
T
=1500A
V
D
6VI
T
1A
mA
150
mA
1.45
V
200
Tj
125V
D
1
2
V
DRM
0.25
mA
V
GT
Gate Trigger Voltage, max.
V
D
6VI
T
1A
3
V
V
Tj
125V
D
2
3
V
DRM
exp, waveform
Rth
j-c Thermal Impedance, max.
Junction to case
500
V/
s
0.085
/W
Electrical Characteristics
Maximum Ratings
Symbol
Item
SBA500AA40
SBA500AA80
SBA500AA120
SBA500AA160
Ratings
Unit
V
DRM
Repetitive Peak Off-State Voltage
400
1200
V
480
1350
V
400
800
960
800
1200
1600
1700
1600
V
V
RSM
V
RRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Power Thyristor Module SBA500AA series are designed for high power rectifier control
applications. Two independent thyristor elements in a electrically isolated package enable
you to achieve flexible design, especially for AC switch application, idial terminal
location for bus bar connection helps both your mechanical design and mounting
procedure be more efficient. SBA series for two thyristors with blocking voltage up to
1600V are available.
Isolated mounting base
I
T
AV
500A, I
T
RMS
785A
di/dt 200 A/
s
dv/dt 500V/
s
Applications
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
K1
K1
G1
A2
A1 K2
G2
K2
UL;E76102
M
SBA500AA
Peak Forward Gate Voltag10V
Peak
G
ate P
ow
er1
5W
Average Gate Power
5
W
Peak Gate Current
5
A
Maximum Gate Non-Trigger Voltage
25 -40
125
Gate Characteristics
Gate CurrentmA
Peak Forward Gate Voltag10V
Pea
k G
ate P
ow
er1
5W
Average Gate Power
5
W
Peak Gate Current
5
A
Maximum Gate Non-Trigger Voltage
Gate Voltage
V
=
Maximum
On-State Characteristics
On-State VoltageV
On-State Current
A
DC
360
0
Conduction Angle
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Power Dissipation
W
Per one element
360
0
Conduction Angle
DC
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-State CurrentA
Allowable Case Temperature
Per one element
Per one element
60Hz
50Hz
Tj25start
Surge On-State Current Rating
Non-Repetitive
Timecycles
Surge On-State Current
A
-
-
-
Per one element
Junction to Case
Time
t
sec
Per one element
Junction to Case
Transient Thermal Impedance
Transient Thermal Impedance
j-c
/
W
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