19
SF150BA50
MOSFET MODULE
UL;E76102 M
SF150BA50 is a isolated power MOSFET module designed for fast swiching
applications of high voltage and current. The mounting base of the module is electrically
isolated from semiconductor elements for simple heatsink construction.
I
D
150A, V
DSS
500V
Suitable for high speed switching application.
Low ON resistance.
Wide Safe Operating Areas.
t
rr
700ns
Applications
UPS CVCF , Motor Control, Switching Power Supply, etc.
Unit
A
Maximum Ratings
Tj
25
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
SF150BA50
Unit
V
DSS
Drain-Source Voltage
500
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain
Current
DC
Pulse
Duty
35%
150
A
I
DP
300
I
D
Reverse Drain Current
150
A
P
T
Total Power Dissipation
Tc
25
780
W
Tj
Channel Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
R.M.S.
A.C. 1minute
2500
V
Mounting
Torque
Mounting M6
Terminal M5
Recommended Value 2.5
3.9
25
40
4.7
48
N m
kgf B
Recommended Value 1.5
2.5
15
25
2.7
28
Mass
Typical Value
160
g
Symbol
Item
Conditions
Ratings
Min.
Typ.
Max.
2.0
Unit
I
GSS
Gate Leakage Current
V
GS
20V
V
DS
0V
A
2.0
I
DSS
Zero Gate Voltage Drain Current
V
GS
0V
V
DS
500V
mA
500
V
BR DSS
Darin-Source Breakdown Voltage
V
GS
0V
I
D
1mA
V
1.0
5.0
V
GS th
Gate-Source Threshold Voltage
V
DS
V
GS
I
D
10mA
V
50
R
DS on
Drain-Source On-State Resistance
I
D
75A
V
GS
15V
m
2.5
V
DS on
Drain-Source On-State Voltage
I
D
75A
V
GS
15V
V
80
gfs
Forward Transconductance
V
DS
10V
I
D
75A
S
27000
Ciss
Input Capacitance
V
GS
0V
V
DS
25V
f
1.0MHz
pF
5000
Coss
Output Capacitance
V
GS
0V
V
DS
25V
f
1.0MHz
pF
2000
Crss
Reverse Transfer Capacitance
V
GS
0V
V
DS
25V
f
1.0MHz
pF
90
tr
Switching
Time
Rise Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
R
L
4
R
GS
50
V
GS
15V
I
D
75A
R
G
5
ns
180
td on
1400
tf
360
td off
1.5
V
SDS
Diode Forward Voltage
I
D
75A
V
GS
0V
V
700
trr
Reverse Recovery Time
I
D
75A
V
GS
0V
di/dt
100A/ s
ns
0.16
Rth j-c
Thermal Resistance
/W
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