SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD300A40/60
TRANSISTOR MODULE
UL;E76102
M
Maximum Ratings
Tj25 unless otherwise specified
Symbol
Item
Conditions
Ratings
SQD300A40 SQD300A60
Unit
V
CBO
Collector-Base Voltage
400
600
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
400
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
=pw1ms
300
600
A
-I
C
Reverse Collector Current
300
A
I
B
Base Current
18
A
P
T
Total power dissipation
T
C
25
1380
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting
M6
Terminal
M6
Terminal
M4
Recommended Value 2.5-3.9
25-40
4.7
48
Recommended Value 2.5-3.9
25-40
Recommended Value 1.0-1.4
10-14
4.7
48
1.5
15
N
m
(
fB)
Mass
Typical Value
460
g
108max
930.5
11.013.0
2-M6
13
2-M4
7.5
21.0
29.0
E
C
B
EX
BX
20.0
48
0.5
63max
20.0
25.5max
36.0max
41.5max
4-6.5
Unit
A
Electrical Characteristics
Symbol
Item
Conditions
Ratings
Min.
Max.
3.0
1000
75
2.0
2.5
2.0
12.0
3.0
1.4
0.09
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
300
V
CEO
SUS
Collector Emitter
Sustaning Voltage
SQD300A40
SQD300A60
SQD300A40
SQD300A60
Ic
1A
V
450
400
V
CEX
SUS
Ic
60AI
B2
-10A
V
600
h
FE
DC Current Gain
Ic
300AV
CE
2V
Ic
300AV
CE
5V
100
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
300AI
B
4.0A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
300AI
B
4.0A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
0.3
Diode part
ts
tf
Vcc
300VIc300A
I
B1
6AI
B2
-6A
-Ic300A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
SQD300A is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
I
C
300A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF
, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
B
BX
EX
E
C
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD300A40/60
Tj125
V
CE
5V
V
CE
2V
Typical
Tj25
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
-
V
CE
V
CB
Typical
Tj25
Ic300A
Ic200A
Ic100A
Ic100A
Ic300A
Ic200A
Saturation Characteristics
Base Current I
B
A
Collector-Emitter Voltage V
V
Base-Emitter Voltage V
BE
V
500
s
100
s
1ms
Puls
e W
ide
10ms
IS
/B
Lim
ite
d
P
T
Limited
SOD300
A40
SOD300
A60
Tc25
Non-Repetitive
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj125
I
B2
-4A
I
B2
-10A
SQD300
A40
SQD300
A60
Reverse Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
IS/B L
imite
d
P
T
Lim
ited
Maximum
=
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Reverse Current -Ic
A
-
tf
ts
tf
ton
I
B1
6A
I
B2
-0.6A
V
CC
300V
Tj25
Typical
Collector Current Vs Switching Time
Collector Current IcA
ton
tf
Switching Time
t
on
t
f ts
s
-
-
50msec50sec
100sec50msec
Max
Junction to case
Maximum Transient Thermal Impedance
Characteristics
Time
t
sec
Transient Thermal Impedance
j-c
/
W
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