50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD400AA100
TRANSISTOR MODULE
UL;E76102
M
Thermal Impedance
(junction to case)
SQD400AA100 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The
mounting base of the module is electrically isolated from Semiconductor elements for
simple heatsink construction.
I
C
=400A, V
CEX
=1000V
Low saturation voltage High DC current gain
Isolated monuting base
Applications
Motor Control
VVVF
, AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
SQD400AA100
Unit
V
CBO
Collector-Base Voltage
1000
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
1200
V
V
CEX
SUS
Collector-Emitter Sustaning Voltage
I
C
-80AI
B
-18A
1000
V
Emitterr-Base Voltage
V
V
EBO
10
I
C
Collector Current
400
A
-I
C
Reverse Collector Current
400
A
I
B
Base Current
20
A
P
T
Total power dissipation
T
C
25
3120
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C. 1minute
2500
V
Mounting Torque
Mouting
M6
Terminal
M8
Recommended Value
2.5-3.9
25-40
4.7
48
Recommended Value
8.8-10
90-105
11
115
Terminal
M4
Recommended Value
1.0-1.4
10-14
1.5
15
N
m
(
fB)
Mass
Typical Value
670
g
113max.
4-6.5
3-M4
90.0max.
70
0.2
10
10
12
EX
B
930.2
21.5
37.0max.
30.0max.
23.0
29.0
29.5
2-M8
BX
C
E
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
3.0
1000
75
100
2.5
3.5
3.0
16.0
3.0
1.8
0.04
0.16
Unit
I
CBO
Collector Cut-off Current
V
CB
1000V
mA
I
EBO
Emitter Cut-off Current
V
EB
10V
mA
h
FE
Ic
300AV
CE
2.8V
DC Current Gain
Ic
400AV
CE
5V
V
CE
sat
Collector-Emitter Sturation Voltage
Ic
400AI
B
8A
V
V
BE
sat
Base-Emitter Saturation Voltage
Ic
400AI
B
8A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
ts
tf
Vcc
600VIc400A
I
B1
8AI
B2
-8A
Ic
-400A
Transistor part
Diode part
V
ECO
Rth
j-c
Switching Time
Collector-Emitter Reverse Voltage
B
BX
EX
E
C
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD400AA100
3
V
CE
5V
V
CE
2.8V
Typical
Tj125
Tj25
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
V
BE
sat
V
CE
sat
Typical
Tj25
Tj125
I
B
8.0A
Saturation Characteristics
Collector Current IcA
Collector-Emitter Voltage V
V
Base-Emitter Voltage V
BE
V
3
100
s
200
s
50
s
Tc25
Non-Repetitive
Pulse Wide
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
Tj125
I
B2
-16A
I
B2
-8A
Collector-Emitter Voltage V
CE
V
Reverse Bias Safe Operating Area
Collector Current Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
IS/B Limited
Non-Repetitive
Typical
Tj25
Tj125
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Reverse Current -Ic
A
ts
tf
ton
I
B1
8.0A
I
B2
-8.0A
V
CC
600V
Tj25
Typical
Collector Current Vs Switching Time
Collector Current IcA
Switching Time
t
on
t
f ts
s
-
-
-
-
-
-
100msec10sec
1msec100msec
Junction to case
Transistor Part
Max.
Maximum Transient Thermal Impedance
Characteristics
Time
t
sec
Transient Thermal Impedance
j-c
/
W
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