50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD400BA60
TRANSISTOR MODULE
Hi-
UL;E76102
M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj25 unless otherwise specified
Electrical Characteristics
Symbol
Item
Conditions
Ratings
SQD400BA60
Unit
V
CBO
Collector-Base Voltage
600
V
V
CEX
Collector-Emitter Voltage
V
BE
-2V
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
=pw1ms
400
800
A
-I
C
Reverse Collector Current
400
A
I
B
Base Current
24
A
P
T
Total power dissipation
T
C
25
1500
W
T
j
Junction Temperature
-40 to 150
Tstg
Storage Temperature
-40 to 125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting
M6
Terminal
M6
Recommended Value 43kgf
B
4.7 (48)
Recommended Value 43kgf
B
4.7 (48)
Terminal
M4 Recommended Value 12.5kgfB
1.5 (15)
N
m
(
fB)
Mass
Typical Value
460
g
108max
930.5
11.013.0
2-M6
13
2-M4
7.5
21.0
29.0
E
C
B
EX
BX
20.0
48
0.5
63max
20.0
25.5max
36.0max
41.5max
4-6.5
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
4.0
1600
750
2.5
3.0
2.0
8.0
2.0
1.8
0.083
0.25
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
450
V
CEO
SUS
V
CEX
SUS
Collector Emitter Sustaning
Voltage
Ic
1A
600
Ic
80AI
B2
-8A
V
h
FE
DC Current Gain
Ic
400AV
CE
2.5V
V
CE
sat
Collector-Emitter Saturation Voltage
Ic
400AI
B
530mA
V
V
BE
sat
Base-Emitter Saturation Voltage
Ic
400AI
B
530mA
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc
300VIc400A
I
B1
0.8AI
B2
-8A
-Ic400A
V
ECO
Rth
j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200
ns
Vcc
300V, Ic-400A, -di/dt300A/s, V
BE
-5V
trr
Reverse Recovery time
B
BX
EX
E
C
SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH h
FE
, high
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr
200ns). The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
I
C
400A, V
CEX
600V
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain h
FE
. h
FE
750
Isolated mounting base
IV
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF
, AC/DC Servo,
UPS, Switching
Power Supply, Ultrasonic Application
SanRex
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD400BA60
1
3
Tj125
Tj25
V
CE
5V
V
CE
2.5V
Typical
D.C. Current Gain
Collector Current IcA
DC Current Gain h
FE
-
ts
tf
ton
Typical
Tj25
I
B1
0.8A
I
B2
-8A
V
CC
300V
Collector Current Vs Switching Time
Collector Current IcA
Switching Time
t
on
t
f ts
s
500
s
100
s
1m
s
Pulse Wide
Non-Repetitive
Tc25
50
s
Forward Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Current Ic
A
-8A
-5A
I
B2
-3A
Tj125
Reverse Bias Safe Operating Area
Collector-Emitter Voltage V
CE
V
Collector Reverse Current -Ic
A
Collector Current Derating Factor
Case Temperature
Derating Factor
%
Second Breakdown Limit
Therm
al Lim
it
Typical
Tj25
Forward Voltage of Free Wheeling Diode
Emitter-Collector Voltage V
ECO
V
Collector Current Ic
A
Qrr
4
Typical
Tj25
di/dt-300A/s
V
BE
-5V
lrr
trr
Reverse Recovery Characteristics
Reverse Collector Current -IcA
Reverse Recovery Charge Qrr
C
Reverse Recovery Current Irr
A
Reverse Recovery Time
t
rr
S
-
-
-
-
-
50msec50sec
500sec50msec
Max
Junction to case
Transient Thermal Impedance
Time
t
sec
Transient Thermal Impedance
j-c
/
W
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