Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN5613
2SA1973/2SC5310
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.56131/4
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Package Dimensions
unit:mm
2018B
[2SA1973/2SC5310]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end
products.
Specifications
( ) : 2SA1973
Absolute Maximum Ratings
at Ta = 25C
Mounted on a glass-epoxy board (20
30
1.6mm)
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
s
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
C
V
O
B
C
0
3
)
(
V
e
g
a
t
l
o
V
r
e
t
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
C
V
O
E
C
5
2
)
(
V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
t
i
m
E
V
O
B
E
6
)
(
V
t
n
e
r
r
u
C
r
o
t
c
e
ll
o
C
IC
1
)
(
A
)
e
s
l
u
P
(
t
n
e
r
r
u
C
r
o
t
c
e
ll
o
C
I P
C
3
)
(
A
t
n
e
r
r
u
C
e
s
a
B
IB
0
0
2
)
(
A
m
n
o
i
t
a
p
i
s
s
i
D
r
o
t
c
e
ll
o
C
PC
0
5
2
W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
J
j
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
g
t
s
T
0
5
1
+
o
t
5
5
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
s
n
o
i
t
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d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
m
p
y
t
x
a
m
t
n
e
r
r
u
C
f
f
o
t
u
C
r
o
t
c
e
ll
o
C
I
O
B
C
V B
C
I
,
V
0
2
)
(
=
E 0
=
1
.
0
)
(
A
t
n
e
r
r
u
C
f
f
o
t
u
C
r
e
t
t
i
m
E
I
O
B
E
V B
E
I
,
V
3
)
(
=
C 0
=
1
.
0
)
(
A
n
i
a
G
t
n
e
r
r
u
C
C
D
h E
F
V E
C
I
,
V
2
)
(
=
C
A
m
0
0
1
)
(
=
*
5
3
1
*
0
0
4
k
n
a
R
5
6
h E
F
0
7
2
o
t
5
3
1
0
0
4
o
t
0
0
2
* : The 2SA1973/2SC5310 are classified by 100mA h
FE
as follows :
Continued on next page.
Marking : 2SA1973 : NS
2SC5310 : NN
2SA1973/2SC5310
No.56132/4
Continued on preceding page.
Switching Time Test Circuit
VR
RL
VCC=12V
VBE=--5V
20IB1= --20IB2= IC=500mA
+
+
50
INPUT
OUTPUT
1k
100
F
470
F
PW=20
s
IB1
D.C.
1%
IB2
(For PNP, the polarity is reversed.)
T
a=75
C
--25
C
25
C
2SA1973
VCE=--2V
Pulse
--1000
--800
--600
--200
--400
0
0
--0.2
--0.4
--0.6
--0.8
--1.2
--1.0
IC -- VBE
ITR08236
2SC5310
VCE=2V
Pulse
IC -- VBE
ITR08237
0
0.2
0.4
0.6
0.8
1.2
1.0
T
a=75
C
--25
C
1000
800
600
200
400
0
25
C
IB=0
--2mA
IB=0
2mA
4mA
6mA
--6mA
ITR08235
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.8
--2.0
--1.6
--0.4
--1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.8
1.6
2.0
0.4
1.2
IC -- VCE
2SA1973
Pulse
ITR08234
IC -- VCE
2SC5310
Pulse
--4mA
Collector Current,
I C
A
Collector Current,
I C
m
A
Collector-to-Emitter Voltage, VCE V
Collector Current,
I C
A
Collector-to-Emitter Voltage, VCE V
Base-to-Emitter Voltage, VBE V
Collector Current,
I C
m
A
Base-to-Emitter Voltage, VBE V
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
s
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C
s
g
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r
P
h
t
d
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w
d
n
a
B
-
n
i
a
G
fT
V E
C
I
,
V
0
1
)
(
=
C
A
m
0
5
)
(
=
0
5
1
z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
O
b
o
C
V B
C
z
H
M
1
=
f
,
V
0
1
)
(
=
9
1
)
2
3
(
F
p
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
C
V E
C
)
t
a
s
(
IC
I
,
A
m
0
0
5
)
(
=
B
A
m
5
2
)
(
=
)
0
5
1
(
)
0
0
3
(
V
m
0
0
1
0
0
2
V
m
e
g
a
t
l
o
V
n
o
i
t
a
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t
a
S
r
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t
t
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-
o
t
-
e
s
a
B
V E
B
)
t
a
s
(
IC
I
,
A
m
0
0
5
)
(
=
B
A
m
5
2
)
(
=
5
8
.
0
)
(
2
.
1
)
(
V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
C
V
O
B
C
)
R
B
(
IC
I
,
A
0
1
)
(
=
E 0
=
0
3
)
(
V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
r
e
t
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
C
V
O
E
C
)
R
B
(
IC
R
,
A
m
1
)
(
=
E
B =
5
2
)
(
V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
-
o
t
-
r
e
t
t
i
m
E
V
O
B
E
)
R
B
(
IE
I
,
A
0
1
)
(
=
C 0
=
6
)
(
V
e
m
i
T
N
O
-
n
r
u
T
t n
o
t
i
u
c
r
i
C
t
s
e
T
d
e
i
f
i
c
e
p
s
e
e
S
0
6
)
0
6
(
s
n
e
m
i
T
e
g
a
r
o
t
S
t g
t
s
t
i
u
c
r
i
C
t
s
e
T
d
e
i
f
i
c
e
p
s
e
e
S
)
0
5
3
(
s
n
0
0
5
s
n
e
m
i
T
ll
a
F
tf
t
i
u
c
r
i
C
t
s
e
T
d
e
i
f
i
c
e
p
s
e
e
S
5
2
)
5
2
(
s
n
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
2SA1973/2SC5310
PS No.56134/4
2SA1785 / 2SC4645
0
280
240
250
200
160
120
80
40
20
0
60
40
80
100
140
120
160
PC -- Ta
ITR08249
PT=100
s
0.1
5
2
5
3
1.0
7
7
5
2
3
7
5
2
3
7
0.01
10
7
1.0
2
5
3
7
2
5
3
2
5
3
DC operation
10ms
ICP
1ms
IC
ITR08248
Ta=25
C
Single pulse
Mounted on a glass-epoxy board
(20
30
1.6mm)
For PNP, the minus sign () is omitted.
2SA1973 / 2SC5310
2SA1973 / 2SC5310
A S O
VBE(sat) -- IC
--1.0
3
3
2
7
5
2SA1973
IC / IB=20
Pulse
ITR08246
25
C
VBE(sat) -- IC
ITR08247
25
C
--0.01
2
3
5
7
7
--0.1
2
3
2
3
5
7 --1.0
--25
C
Ta=75
C
1.0
3
3
2
7
5
2SC5310
IC / IB=20
Pulse
0.01
2
3
5
7
7
0.1
2
3
2
3
5
7 1.0
--25
C
Ta=75
C
Collector Current, IC A
Base-to-Emitter
Saturation Voltage,
V
BE
(sat)
V
Collector Current, IC A
Base-to-Emitter
Saturation Voltage,
V
BE
(sat)
V
Collector Current,
I C
A
Collector-to-Emitter Voltage, VCE V
Collector Dissipation,
P
C
m
W
Ambient Temperature, Ta C
Mounted on a glass-epoxy board (20
30
1.6mm)
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