2SB1683 / 2SD2639
No.6960-1/4
Features
Wide ASO because of on-chip ballast resistance.
Good dependence of fT on current and good HF
characteristic.
Specifications
( ) : 2SB1683
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)160
V
Collector-to-Emitter Voltage
VCEO
(--)140
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)12
A
Collector Current (Pulse)
ICP
(--)15
A
Collector Dissipation
PC
Tc=25
C
80
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--40 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)0.1
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6960
Package Dimensions
unit : mm
2010C
[2SB1683 / 2SD2639]
62501 TS IM TA-3139, 3140
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.55
2.7
1 2
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
2SB1683 / 2SD2639
140V / 12A, AF 60W Output Applications
2SB1683 : PNP Epitaxial Planar Silicon Transistor
2SD2639 : NPN Triple Diffused Planar Silicon Transistor
2SB1683 / 2SD2639
No.6960-2/4
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
IC -- VCE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
-
-
A
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
IC -- VCE
0
0
--10
--20
--30
--40
0
--2
--6
--4
--8
--10
0
IT03152
--2
--1
--3
--4
--5
--6
--7
0
2
1
3
4
5
6
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT03154
IT03155
IT03153
--240mA
--200mA
--160mA
--120mA
--40mA
--20mA
--80mA
2SB1683
IB=0
10
10
20
30
40
8
6
4
2
0
240mA 160mA
200mA
120mA
80mA
40mA
20mA
2SB1683
VCE= --5V
2SD2639
VCE=5V
2SD2639
RB
1
VCC=20V
VBE=--2V
(For PNP, the polarity is reversed)
51
Input
Output
+
+
PW=20
s
D.C.
1%
RL
20
1
F
1
F
IB1
IB2
VR
200
10IB1= --10IB2=IC=1A
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1
VCE=(--)5V, IC=(--)1A
60*
200*
hFE2
VCE=(--)5V, IC=(--)6A
20
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
15
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(300)210
pF
Base-to-Emitter Saturation Voltage
VBE
VCE=(--)5V, IC=(--)1A
1.5
V
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)0.5A
(1.1)0.6
2.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0
(--)160
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)5mA, RBE=
(--)140
V
IC=(--)50mA, RBE=
(--)140
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)5mA, IC=0
(--)6
V
Turn-ON Time
ton
See specified test circuit.
(0.25)0.26
s
Fall Time
tf
See specified test circuit.
(0.53)0.68
s
Storage Time
tstg
See specified test circuit.
(1.61)6.88
s
* : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows :
Rank
D
E
hFE
60 to 120
100 to 200
Switching Time Test Circuit
2SB1683 / 2SD2639
No.6960-3/4
IT03160
IT03162
2
100
1000
5
7
2
3
2
5
7
3
--10
--1.0
--100
2
3
5
7
2
3
5
7
--1.0
--0.1
2
3
5
7
--10
2
3
5
7
2SB1683
f=1MHz
IT03161
100
1000
2
5
7
2
3
2
5
7
3
10
1.0
100
2
3
5
7
2
3
5
7
2SD2639
f=1MHz
IT03163
5
0.1
1.0
5
7
2
3
7
10
5
7
2
3
2
3
5
0.1
1.0
5
7
2
3
7
10
5
7
2
3
2
3
1.0
0.1
2
3
5
7
10
2
3
5
7
--0.1
--1.0
--10
2
3
5
7
2
3
5
7
2
10
100
1000
5
7
2
3
5
7
2
3
IT03158
0.1
1.0
10
2
3
5
7
2
3
5
7
2
10
100
1000
5
7
2
3
5
7
2
3
IT03159
2SD2639
VCE=5V
2SB1683
VCE= --5V
IT03156
1.0
10
5
7
2
3
5
2
3
--1.0
--0.1
2
3
5
7
--10
2
3
5
7
2SB1683
VCE= --5V
IT03157
1.0
10
5
7
2
3
5
2
3
1.0
0.1
2
3
5
7
10
2
3
5
7
2SD2639
VCE=5V
2SB1683
IC / IB=10
2SD2639
IC / IB=10
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -
-
pF
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -
-
pF
Collector Current, IC -- A
VCE(sat) -- IC
f T -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, f
T
-
-
MHz
f T -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- A
hFE -- IC
DC Current Gain, h
FE
Collector Current, IC -- A
hFE -- IC
DC Current Gain, h
FE
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
2SB1683 / 2SD2639
No.6960-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
PS
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Forward Bias A S O
Collector Current, IC -- A
VBE(sat) -- IC
Collector Current, IC -- A
VBE(sat) -- IC
5
--1.0
--10
5
2
3
5
7
2
3
7
--1.0
--0.1
2
3
5
7
--10
2
3
5
7
IT03164
5
1.0
10
5
2
3
5
7
2
3
7
1.0
0.1
2
3
5
7
10
2
3
5
7
IT03165
2SD1683
IC / IB=10
2SD2639
IC / IB=10
IT03166
2
3
0.1
3
5
7
1.0
2
3
5
7
10
2
10
1.0
2
3
5
7
100
2
3
2
3
5
7
10ms
1ms
100ms
DC operation
2SB1683 / 2SD2639
Tc=25
C
Single pulse
For PNP, minus sign is omitted
ICP=15A
IC=12A
IT03168
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
2SB1683 / 2SD2639
Case Temperature, Tc --
C
PC -- Tc
Collector Dissipation, P
C
-
-
W
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
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