Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency
Low-Noise Amplifier Applications
Ordering number:ENN5911
2SC5415
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-1022 No.59111/6
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2038A
[2SC5415]
Features
High gain :
S21e
2
=9dB typ (f=1GHz).
High cutoff frequency : f
T
=6.7GHz typ.
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
* The 2SC5415 is classified by 30mA h
FE
as follows :
Marking : EA
h
FE
rank : E, F
0
8
1
E
0
9
0
7
2
F
5
3
1
r
e
t
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m
a
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P
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ll
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C
V
O
B
C
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2
V
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A
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C
PC
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m
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2
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0
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t
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g
t
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T
0
5
1
+
o
t
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5
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m
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f
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B
C
V B
C
I
,
V
0
1
=
E 0
=
0
.
1
A
t
n
e
r
r
u
C
f
f
o
t
u
C
r
e
t
t
i
m
E
I
O
B
E
V B
E
I
,
V
1
=
C 0
=
0
1
A
n
i
a
G
t
n
e
r
r
u
C
C
D
h E
F 1
V E
C
I
,
V
5
=
C
A
m
0
3
=
*
0
9
*
0
7
2
h E
F 2
V E
C
I
,
V
5
=
C
A
m
0
7
=
0
7
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
G
fT
V E
C
I
,
V
5
=
C
A
m
0
3
=
5
7
.
6
z
H
G
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
O
b
o
C
V B
C
z
H
M
1
=
f
,
V
5
=
2
.
1
8
.
1
F
p
e
c
n
a
t
i
c
a
p
a
C
r
e
f
s
n
a
r
T
e
s
r
e
v
e
R
e
r
C
V B
C
z
H
M
1
=
f
,
V
5
=
5
6
.
0
F
p
n
i
a
G
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F
|
e
1
2
S
|
2
V E
C
I
,
V
5
=
C
z
H
G
1
=
f
,
A
m
0
3
=
5
.
7
9
B
d
e
r
u
g
i
F
e
s
i
o
N
F
N
V E
C
I
,
V
5
=
C
z
H
G
1
=
f
,
A
m
7
=
1
.
1
0
.
2
B
d
2SC5415
No.59112/6
h
FE
- I
C
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
2
0
7
5
3
2
7
5
7
5
3
3
3
2
2
0
10
40
20
50
30
0
4
2
6
10
8
12
0
20
40
60
100
80
1.0
10
100
2
7
5
7
5
3
3
2
1.0
10
100
100
10
3
5
7
7
2
2
3
5
7
2
7
5
3
0.1
1.0
2
7
5
3
2
3
10
2
1.0
7
7
5
3
2
7
5
3
10
100
1.0
10
0.1
2
3
2
3
5
5
7
7
7
2
7
5
3
0.1
1.0
2
7
5
3
2
3
10
1.0
10
0.1
7
2
3
2
3
5
5
7
1.0
10
2
3
5
7
f
T
- I
C
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
= 0
I
C
- V
CE
I
C
- V
BE
Cob - V
CB
Cre - V
CB
V
CE
=5V
2V
2V
V
CE
=5V
V
CE
=5V
2V
f = 1MHz
f = 1MHz
0
4
2
8
6
10
2
7
1.0
7
5
3
2
7
5
3
10
100
N F - I
C
f = 1GHz
f = 1GHz
V
CE
=2V
V
CE
=5V
5V
2V
S21e
2
-- I
C
Collector Current,
I C
m
A
Collector Current,
I C
m
A
Collector-to-Emitter Voltage, VCE V
Base-to-Emitter Voltage, VBE V
DC Current Gain,
h
FE
Output Capacitance, Cob
p
F
Noise Figure, NF
d
B
Collector Current, IC mA
Collector Current, IC mA
Collector Current, IC mA
Collector Current, IC mA
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product,
f T
GHz
Re
v
erse
T
ransfer Capacitance, Cre
pF
F
o
rw
ard
T
ransfer Gain,
S21e
2
d
B
PDF 
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