Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6367
2SA2022/2SC5610
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2470 No.63671/5
Package Dimensions
unit:mm
2041A
[2SA2022/2SC5610]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220ML
Applications
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ) : 2SA2022
Absolute Maximum Ratings
at Ta = 25C
Continued on next page.
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p
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
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2.55
2.55
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4.5
2.8
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2.55
2.55
2.4
1
2
3
2SA2022/2SC5610
No.63672/5
Continued on preceding page.
Switching Time Test Circuit
+
+
50
INPUT
OUTPUT
VR
RB
RL
VCC=20V
100
F
470
F
VBE=--5V
PW=20
s
IB1
IB2
D.C.
1%
10IB1= --10IB2= IC=2A
(For PNP, the polarity is reversed.)
--7
--6
--5
--4
--3
--2
--1
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
IC -- VCE
--10mA
--5mA
--20mA
--
40mA
--60mA
--80mA
--180mA
--160mA
--200mA
IB=0
2SA2022
IT01345
--7
--6
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.2
--1.0
IC -- VBE
IT01346
T
a=75
C
25
C
--25
C
2SA2022
VCE=--2V
--140mA
--120mA
--100mA
7
6
5
4
3
2
1
0
0
0.4
0.8
1.2
1.6
2.0
IC -- VCE
5mA
10mA
20mA
60mA
40mA
80mA
100mA
IB=0
2SC5610
IT01353
200mA
120mA
180mA
140mA
160mA
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.2
1.0
IC -- VBE
IT01354
T
a=75
C
2SC5610
VCE=2V
25
C
--25
C
Collector Current,
I C
A
Collector Current,
I C
A
Collector-to-Emitter Voltage, VCE V
Collector Current,
I C
A
Collector-to-Emitter Voltage, VCE V
Base-to-Emitter Voltage, VBE V
Collector Current,
I C
A
Base-to-Emitter Voltage, VBE V
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1
s
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2SA2022/2SC5610
No.63673/5
10
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0.01
0.01
0.1
2
3
5
7
2
3
5 7
2
3
5
7
1.0
10
VCE(sat) -- IC
IT01357
Ta=75
C
25
C
--25
C
2SC5610
IC / IB=50
VBE(sat) -- IC
10
1.0
0.1
0.01
0.1
1.0
10
Ta=--25
C
25
C
75
C
7
5
3
2
7
5
3
2
2
3
5
7
2
3
5
7
2
3
5 7
2SC5610
IC / IB=20
IT01358
1000
100
2
3
5
7
2
3
5
7
10
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
VCE(sat) -- IC
IT01356
Ta
=75
C
25
C
--2
5
C
2SC5610
IC / IB=20
--1000
--100
2
3
5
7
2
3
5
7
--10
--0.01
--0.1
2
3
5
7
2
3
5 7
2
3
5
7
--1.0
--10
VCE(sat) -- IC
IT01348
Ta=75
C
25
C
--25
C
2SA2022
IC / IB=20
--10
--1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--0.01
--0.01
--0.1
2
3
5 7
2
3
5
7
2
3
5
7
--1.0
--10
VCE(sat) -- IC
IT01349
Ta=75
C
25
C
--25
C
2SA2022
IC / IB=50
VBE(sat) -- IC
--10
--1.0
--0.1
--0.01
--0.1
--1.0
--10
Ta=--25
C
25
C
75
C
7
5
3
2
7
5
3
2
2
3
5
7
2
3
5
7
2
3
5
7
2SA2022
IC / IB=20
IT01350
1000
100
7
5
3
2
7
5
3
2
10
--0.01
3
2
5
--10
--0.1
7
3
2
5 7
3
2
5
7
--1.0
hFE -- IC
IT01347
Ta=75
C
25
C
--25
C
2SA2022
VCE=--2V
1000
100
7
5
3
2
7
5
3
2
10
0.01
3
2
5
10
0.1
7
3
2
5
7
3
2
5 7
1.0
hFE -- IC
IT01355
Ta=75
C
25
C
--25
C
2SC5610
VCE=2V
DC Current Gain,
h
FE
Collector Current, IC A
DC Current Gain,
h
FE
Collector Current, IC A
Collector Current, IC A
Collector-to-Emitter
Saturation Voltage,
V
CE
(sat)
m
V
Collector Current, IC A
Collector-to-Emitter
Saturation Voltage,
V
CE
(sat)
m
V
Collector Current, IC A
Collector-to-Emitter
Saturation Voltage,
V
CE
(sat)
V
Collector Current, IC A
Base-to-Emitter
Saturation Voltage,
V
BE
(sat)
V
Collector Current, IC A
Base-to-Emitter
Saturation Voltage,
V
BE
(sat)
V
Collector Current, IC A
Collector-to-Emitter
Saturation Voltage,
V
CE
(sat)
V
2SA2022/2SC5610
No.63674/5
A S O
ICP
IC
100ms
10
s
DC operation
10ms
1ms
500
s
100
s
1.8
2.0
0
1.6
1.4
2.2
1.0
0.8
0.6
0.4
0.2
1.2
20
0
60
40
80
100
140
120
160
PC -- Ta
2SA2022 / 2SC5610
IT01362
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
2
0.1
1.0
10
100
2
5
3
7
2
5
3
7
2
5
3
7
IT01361
f T -- IC
7
3
100
2
5
7
3
2
5
1000
IT01360
2SC5610
VCE=2V
f T -- IC
100
1000
7
7
2
5
3
3
2
5
--0.01
2
5
7
5 7
3
2
5
7
3
2
5
3
--0.1
--1.0
0.01
2
5
7
5
7
3
2
5
7
3
2
5
3
0.1
1.0
IT01352
2SA2022
VCE=--2V
Cob -- VCB
7
5
3
2
7
5
3
2
5
3
2
10
100
--1.0
2
3
5
7
2
3
5
2
3
5
7
--1.0
--10
IT01351
2SA2022
f=1MHz
7
5
3
2
7
5
3
2
10
100
5
3
2
1.0
2
3
5
7
10
2
IT01359
2SC5610
f=1MHz
Cob -- VCB
18
20
0
16
14
22
10
8
6
4
2
12
20
0
60
40
80
100
140
120
160
PC -- Tc
2SA2022 / 2SC5610
IT01870
Gain-Bandwidth Product,
f T
MHz
Collector Current, IC A
Output Capacitance, Cob
p
F
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
p
F
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product,
f T
MHz
Collector Current, IC A
Collector Current,
I C
A
Collector-to-Emitter Voltage, VCE V
Collector Dissipation,
P
C
W
Ambient Temperature, Ta C
No heat sink
Collector Dissipation,
P
C
W
Case Temperature, Tc C
2SA2022 / 2SC5610
Tc=25
C
Single pulse
For PNP, the minus sign () is omitted
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.
2SA2022/2SC5610
PS No.63675/5
PDF 
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