2SC5776
No.6990-1/4
Features
High speed.
High breakdown voltage (VCBO=1600V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1600
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
8
A
Collector Current (Pulse)
ICP
16
A
Collector Dissipation
PC
3.0
W
Tc=25
C
65
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
ICES
VCE=1600V, RBE=0
1.0
mA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
40
200
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6990
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
2SC5776
Package Dimensions
unit : mm
2174A
[2SC5776]
62001 TS IM TA-3322
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3.5
8.0
5.6
3.1
1
2
3
2SC5776
No.6990-2/4
0
0
1
IC -- VCE
IT03553
IT03555
IT03554
IT03556
3
2
9
8
7
6
5
4
1
2
5
6
3
4
7
8
9
10
0
0
IC -- VBE
0.2
0.4
0.6
0.8
1.0
1.2
6
5
9
7
8
3
4
2
1
1.0
hFE -- IC
2
3
5
7
2
3
5
7
0.1
1.0
10
10
2
3
5
2
3
5
7
0.1
VCE(sat) -- IC
2
3
5
7
2
3
5
7
1.0
10
10
0.1
1.0
2
3
5
7
2
3
5
7
5
7
IB=0
0.1A
0.2A
0.4A
0.6A
1.0A
2.0A
1.8A
1.6A
1.4A
1.2A
0.8A
T
a=120
C
25
C
--
4
0
C
VCE=5V
Ta=120
C
25
C
--40
C
VCE=5V
Ta= -
-40
C
25
C
T
a= -
-40
C
120
C
25
C
IC / IB=5
120
C
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
A
Base-to-Emitter Voltage, VBE -- V
Collector Current, I
C
--
A
Collector Current, IC -- A
DC Current Gain, h
FE
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
DC Current Gain
hFE1
VCE=5V, IC=1A
8
hFE2
VCE=5V, IC=4.5A
4
7
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=4A, IB=1A
3.0
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=4A, IB=1A
1.5
V
Storage Time
tstg
IC=3A, IB1=0.5A, IB2=--1.5A
3.0
s
Fall Time
tf
IC=3A, IB1=0.5A, IB2=--1.5A
0.2
s
Diode Forward Voltage
VF
IEC=6.5A
2.2
V
Switching Time Test Circuit
VR
RB
VCC=200V
VBE= --2V
+
+
50
INPUT
OUTPUT
RL=66.7
100
F
470
F
PW=20
s
IB1
D.C.
1%
IB2
2SC5776
No.6990-3/4
0
0
PC -- Tc
IT03562
40
30
20
10
60
50
80
70
65
40
20
100
120
60
80
140
160
0
0
1.0
0.5
1.5
PC -- Ta
IT03561
2.0
2.5
3.0
3.5
4.0
60
40
20
80
160
120
140
100
No heat sink
IT03557
0.1
SW Time -- IC
1.0
2
3
5
7
2
3
5
7
10
2
3
5
7
10
2
3
5
7
1.0
IT03559
IT03560
Reverse Bias A S O
1.0
Forward Bias A S O
2
3
5
7 10
2
3
5
7
2
3
5
7
100
1000
0.01
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
100
1000
2
3
5
7
2
0.1
2
3
2
3
5
10
7
2
3
5
1.0
7
0.1
IT03558
SW Time -- IB2
1.0
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
7
1.0
VCC=200V
IC=3A
IB1=0.5A
R load
tstg
t
f
VCC=200V
IC / IB1=6
IB2 / IB1=3
R load
tstg
tf
ICP=16A
IC=8A
Tc=25
C
Single pulse
300
s
100
s
1ms
10ms
P
C =65W
DC operation
L=500
H
IB2= --2A
Tc=25
C
Single pulse
Collector Current, IC -- A
Switching
T
ime, SW
T
ime -
-
s
Switching
T
ime, SW
T
ime -
-
s
Base Current, IB2 -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
-
-
A
Ambient Temperature, Ta --
C
Collector Dissipation, P
C
-
-
W
Collector Dissipation, P
C
-
-
W
Case Temperature, Tc --
C
2SC5776
No.6990-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
PS
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