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Электронный компонент: 2SC5980

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2SC5980
No.8091-1/4
Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE width.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCES
100
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
Collector Current
IC
8
A
Collector Current (Pulse)
ICP
11
A
Base Current
IB
2
A
Collector Dissipation
PC
1.0
W
Tc=25
C
15
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
A
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Continued on next page.
Ordering number : ENN8091
21405EA TS IM TB-00000320
2SC5980
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC5980
No.8091-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
28
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3.5A, IB=175mA
125
190
mV
IC=2A, IB=40mA
100
150
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=40mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10
A, IE=0
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100
A, RBE=
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10
A, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
420
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2045B
2044B
Switching Time Test Circuit
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
2
3
4
2.3
2.3
VR
RB
VCC=25V
IC=20IB1= --20IB2=2.5A
VBE= --5V
+
+
50
INPUT
OUTPUT
RL
470
F
100
F
PW=20
s
IB1
D.C.
1%
IB2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
4
3
2SC5980
No.8091-3/4
IC -- VCE
Collector Current, I
C
--

A
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Collector Current, I
C
--

A
Base-to-Emitter Voltage, VBE -- V
8
6
7
4
5
2
3
1
0
8
6
7
4
5
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT08219
10mA
15mA
20mA
40mA
60mA
80mA
100mA
IB=0
5mA
T
a=75
C
25
C
--25
C
VCE=2V
0
0.2
0.4
0.6
0.8
1.2
1.1
1.0
0.1
0.3
0.5
0.7
0.9
IT08220
30mA
IT08225
5
3
2
2
100
10
7
IT08223
Ta=75
C
--25
C
IT08224
IC / IB=20
25
C
3
1.0
2
3
Ta= --25
C
25
C
75
C
2
7
5
IC / IB=50
IT08226
Ta=75
C
25
C
--25
C
7
100
1000
7
5
3
2
5
0.01
3
2
5
0.1
7
3
2
5
7
2
3
1.0
5
7 10
0.01
3
2
5
0.1
7
3
2
5
7
2
3
1.0
5
7
100
10
1000
5
3
2
7
5
3
2
0.01
3
2
5
0.1
7
3
2
5
7
2
3
1.0
5
7 10
0.1
3
2
5
1.0
7
3
2
5
7
2
3
10
5
7 100
7
0.1
0.01
5
3
2
7
5
3
2
0.01
3
2
5
0.1
7
3
2
5
7
2
3
1.0
5
7 10
0.01
3
2
5
0.1
7
3
2
5
7
2
3
1.0
5
7 10
0.1
0.01
7
5
3
2
1.0
7
5
3
2
3
2
VCE=2V
IT08221
IT08222
IC / IB=50
Ta=75
C
--25
C
25
C
VCE=10V
f=1MHz
VCE(sat) -- IC
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Cob -- VCB
VCE(sat) -- IC
VBE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob
-
-
pF
Collector Current, IC -- A
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
Collector Current, IC -- A
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
hFE -- IC
f T -- IC
Collector Current, IC -- A
DC Current Gain, h
FE
Gain-Bandwidth Product, f
T
-
-
MHz
Collector Current, IC -- A
2SC5980
No.8091-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
0
1.2
1.0
0.8
0.6
0.4
0.2
20
0
60
40
80
100
140
120
160
PC -- Ta
IT02972
A S O
10
1.0
0.01
2
7
5
3
2
7
5
3
2
0.1
7
5
3
2
1.0
0.1
10
100
2
5
3
7
2
5
3
7
2
5
3
7
IT08227
100ms
10ms
1ms
500
s
100
s
18
0
16
14
15
8
10
6
4
2
12
20
0
60
40
80
100
140
120
160
PC -- Tc
IT02973
DC Operation (T
a=25
C)
DC Operation (T
c=25
C)
Ambient Temperature, Ta --
C
Collector Dissipation, P
C
-
-
W
Case Temperature, Tc --
C
Collector Dissipation, P
C
-
-
W
Collector Current, I
C
-
-

A
Collector-to-Emitter Voltage, VCE -- V
No heat sink
ICP=11A
IC=8A
10
s
Tc=25
C
Single Pulse