2SC6065
No.8561-1/4
Features
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
500
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
8
V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
PW
300
s, duty cycle
10%
3
A
Base Current
IB
0.7
A
Collector Dissipation
PC
0.9
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
A
hFE1
VCE=5V, IC=0.1A
20
50
DC Current Gain
hFE2
VCE=5V, IC=0.7A
10
hFE3
VCE=5V, IC=1mA
10
Continued on next page.
Ordering number : EN8561
12006CB MS IM TB-00001637
2SC6065
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
2SC6065
No.8561-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=0.1A
20
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
10
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=0.7A, IB=0.14A
0.8
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.7A, IB=0.14A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
500
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
8
V
Turn-ON Time
ton
IC=1A, IB1=0.2A, IB2=--0.4A, RL=200
, VCC=200V
0.5
s
Storage Time
tstg
IC=1A, IB1=0.2A, IB2=--0.4A, RL=200
, VCC=200V
2.5
s
Fall Time
tf
IC=1A, IB1=0.2A, IB2=--0.4A, RL=200
, VCC=200V
0.25
s
Package Dimensions
Switching Time Test Circuit
unit : mm
7519-003
1
2
3
6.9
0.5
0.6
4.0
4.5
1.0
1.0
2.5
1.45
1.0
1.0
0.9
0.45
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
VR
RB
RL
VBE= --5V
VCC=200V
+
+
INPUT
OUTPUT
100
F
470
F
PW=20
s
IB1
IB2
D.C.
1%
50
1.2
2.0
1.6
0.8
0.4
0
0
2
6
4
8
1
3
7
5
9
10
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, I
C
--
A
IT06213
IB=0mA
10mA
20mA
50mA
100mA
150mA
200mA
250mA
300mA
350mA
500mA
1.0
1.8
1.4
0.6
0.2
IT06214
1.5
2.0
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
IC -- VBE
Base-to-Emitter Voltag, VBE -- V
Collector Current, I
C
--
A
VCE=5V
T
a=120
C
25
C
--40
C
400mA
450mA
2SC6065
No.8561-3/4
0.1
7
5
3
2
1.0
2
7
5
3
10
2
0.001
2
0.01
7
5
3
2
0.1
7
5
3
2
10ms
1ms
DC operation
500
s
100
s
ICP=3A
IC=1.5A
100ms
1.0
7
5
3
2
2
7
5
3
7
5
3
100
2
7
5
3
2
0.1
0.01
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
100
10
2
3
5
7
2
3
5
7
1000
0.1
2
3
5
7
1.0
2
3
5
7
10
0.1
2
3
5
7
1.0
2
3
5
Collector Dissipation, P
C
--
W
Ambient Temperature, Ta --
C
PC -- Ta
Collector Current, I
C
--
A
Collector-to-Emitter Voltage, VCE -- V
Reverse Bias A S O
IT06220
Ta=25
C
IB2= --0.3A
L=500
H, single pulse
Collector Current, I
C
--
A
Collector-to-Emitter Voltage, VCE -- V
Forward Bias A S O
Ta=25
C
Single pulse
1.0
0.1
2
3
2
3
5
7
Collector Current, IC -- A
IT06218
SW Time -- IC
tstg
tf
IC / IB1=5
IB2 / IB1=2
R load
IT06217
0.01
7
5
3
2
0.1
7
5
3
2
1.0
3
2
VBE(sat) -- IC
Collector Current, IC -- A
IC / IB=5
Ta= --40
C
120
C
25
C
Switching
T
ime, SW
T
ime -
-
s
Base-to-Emitter
Saturation V
oltage, V
BE
(sat) -
-
V
hFE -- IC
Collector Current, IC -- A
IT06215
2
3
5 7
0.001
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
VCE=5V
1.0
10
7
5
3
2
100
7
5
3
2
3
2
2
3
5
7
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
0.1
0.01
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
Ta=120
C
25
C
--40
C
VCE(sat) -- IC
Collector Current, IC -- A
IT06216
IC / IB=5
T
a=120
C
25
C
--40
C
DC Current Gain, h
FE
Collector
-to-Emitter
Saturation V
oltage, V
CE
(sat) -
-
V
120
C
25
C
Ta= --40
C
0
40
80
120
160
20
60
100
140
0
0.8
0.4
1.0
0.6
0.2
0.7
0.3
0.9
0.5
0.1
IT10278
2SC6065
No.8561-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
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