2SJ580
No.6669-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
Features
Low ON-resistanse.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
--1.8
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
--7.2
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (250mm
2
!
0.8mm)
1.5
W
Tc=25
C
3.5
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0
--10
A
Gate-to-Sourse Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1A
1.6
2.3
S
RDS(on)1
ID=--1A, VGS=--10V
300
400
m
Static Drain-to-Sourse On-State Resistance
RDS(on)2
ID=--0.8A, VGS=-4V
400
560
m
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SJ580
Package Dimensions
unit : mm
2062A
[2SJ580]
90100 TS IM TA-2733
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Ordering number : ENN6669
2SJ580
No.6669-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=--20V, f=1MHz
270
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
70
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
20
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
7
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
38
ns
Fall Time
tf
See specified Test Circuit
16
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1.8A
9.8
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--1.8A
1.4
nC
Gate-to-Drain "Miller" Charge
Qgd
VDS=--10V, VGS=--10V, ID=--1.8A
1.7
nC
Diode Forward Voltage
VSD
IS=--1.8A, VGS=0
--0.81
--1.2
V
Marking : JR
Switching Time Test Circuit
PW=10
s
D.C.
1%
0V
--10V
VIN
P.G
50
G
S
ID= --1A
RL=30
VDD= --30V
VOUT
2SJ580
VIN
D
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
0
0
--0.4
--0.8
--1.2
--2.0
--0.4
--1.6
--0.2
--0.6
--1.0
--1.8
--1.4
--0.8
--1.2
--1.6
--2.0
--0.2
--0.6
--1.0
--1.4
--1.8
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, I
D
-
-
A
VGS= --2.5V
--8.0V
--6.0V
--5.0V
--10.0V
--3.0V
--3.5V
--4.0V
IT01223
0
--2
--4
--6
--8
--10
--12
200
400
600
800
1000
100
300
500
700
900
0
--14
--16
--18
--20
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Tc=25
C
IT02042
Case Temperature Tc --
C
RDS(on) -- Tc
IT02043
I D
= --0.8A,
V GS
= --4V
ID= -
-1.0A,
V GS
= --10V
--60
0
200
400
600
800
1000
100
300
500
700
900
--40
--20
0
20
40
60
80
100
120
160
140
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.5
--3.0
--4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, I
D
-
-
A
VDS= --10V
75
C
Tc= -
-25
C
IT02041
25
C
--1.0A
ID= -
-0.8A
2SJ580
No.6669-3/4
0
0
--1
--2
--3
--4
--5
--6
--7
--8
10
6
2
4
5
7
8
9
1
3
--9
--10
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source V
oltage,
V
GS
--
V
VDS= --10V
ID= --1.8A
IT01231
0
0
20
40
0.5
60
1.0
80
100
120
1.5
2.0
140
160
Ambient Temperature, Ta --
C
PD -- Ta
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02047
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
100ms
DC operation
1ms
10ms
IDP= --7.2A
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01
2
3
5 7
2
3
5 7
2
3
5
7
--0.1
--1.0
--10
--100
IT02046
10
s
Operation in
this area is
limited by RDS(on).
Tc=25
C
Single pulse
0
10
100
--10
--20
1000
7
5
3
2
7
5
3
2
--60
--30
--40
--50
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -
-
pF
f=1MHz
Ciss
Coss
Crss
IT01230
--0.1
1.0
--1.0
2
3
5
7
2
3
5
100
7
5
3
2
10
7
5
3
2
Drain Current, ID -- A
SW Time -- ID
Switching
T
ime, SW
T
ime -
-
ns
VDD= --30V
VGS= --10V
td(on)
td(off)
tr
tf
IT01229
Mounted on a ceramic board(250mm
2
!
0.8mm)
0
0
20
40
1.0
60
2.0
80
100
120
3.0
3.5
2.5
1.5
0.5
4.0
140
160
Case Temperature, Tc --
C
PD -- Tc
Allo
w
able Po
wer Dissipation, P
D
-
-
W
IT02048
Drain Current, ID -- A
IT02044
--0.001
0.01
--0.1
--0.01
--1.0
2 3
5 7
2 3
5 7
2 3
5 7
2 3
5 7
10
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
--10
F
orw
ard T
ransfer
Admittance,
yfs
-
-
S
yfs
-- ID
VDS= --10V
75
C
25
C
Tc= -
-25
C
IT02045
--0.4
--0.3
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--0.01
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
Diode Forward Voltage, VSD -- V
F
o
w
ard Current, I
F
--
A
IF -- VSD
VGS
= 0
--25
C
25
C
Tc=75
C
ID= --1.8A
2SJ580
No.6669-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2000. Specifications and information herein are subject
to change without notice.
PS
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