2SJ657
No.7685-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings
at Ta=25
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
20
V
Drain Current (DC)
ID
--25
A
Drain Current (Pulse)
IDP
PW
10
s, duty cycle
1%
--100
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
C
35
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
--55 to +150
C
Electrical Characteristics
at Ta=25
C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=
16V, VDS=0
10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--13A
21
30
S
Marking : J657
Continued on next page.
P-Channl Silicon MOSFET
Ordering number : ENN7685
2SJ657
41504QA TS IM TA-100800
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
General-Purpose Switching Device
Package Dimensions
unit : mm
2063A
[2SJ657]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
2
3
2SJ657
No.7685-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--13A, VGS=--10V
39
52
m
RDS(on)2
ID=--13A, VGS=--4V
49
69
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
6350
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
430
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
250
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
47
ns
Rise Time
tr
See specified Test Circuit.
240
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
520
ns
Fall Time
tf
See specified Test Circuit.
200
ns
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--25A
110
nC
Gate-to-Source Charge
Qgs
VDS=--50V, VGS=--10V, ID=--25A
20
nC
Gate-to-Drain"Miller"Charge
Qgd
VDS=--50V, VGS=--10V, ID=--25A
20
nC
Diode Forward Voltage
VSD
IS=--25A, VGS=0
--0.94
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
1%
P.G
50
G
S
D
ID= --13A
RL=3.85
VDD= --50V
VOUT
2SJ657
VIN
0V
--10V
VIN
ID -- VDS
IT06587
ID -- VGS
IT06588
0
0
--40
--50
--20
--30
--10
--5.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
0
0
--40
--50
--20
--30
--10
--5.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
ID -- VDS
Tc=25
C
--10V
--6V
--4V
VGS= --3V
VDS= --10V
25
C
25
C
T
c= -
-25
C
T
c= -
-25
C
75
C
75
C
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain Current, I
D
--
A
2SJ657
No.7685-3/4
0
100
1000
10000
7
5
3
2
--30
--5
--15
--20
--25
--10
Ciss, Coss, Crss -- VDS
IT06594
A S O
2
3
5
7
2
3
5
7
2
2
3
5
--10
7
3
--100
--1.0
--0.1
2
3
5 7
2
3
5 7
2
2
3
5 7
--0.1
--1.0
--10
--100
IT06596
SW Time -- ID
IT06593
IT06592
0
--0.3
--0.6
--0.9
--1.2
--1.5
--0.001
--100
--0.01
7
5
3
2
--0.1
7
5
3
2
--1.0
7
5
3
2
--10
7
5
3
2
7
5
3
2
IF -- VSD
0
0
--2
--1
--4
--3
--5
--6
--7
--8
--9
110
10
--10
VGS -- Qg
IT06595
IT06591
--0.1
10
2
3
5
7
2
2
3
5
3
5
7
--1.0
7
--10
100
7
5
1.0
3
2
7
5
3
2
y
fs
-- ID
20
30
40
50
60
70
80
90
100
VDS= --50V
ID= --25A
tf
VGS=0
25
C
--25
C
7
5
3
2
f=1MHz
Ciss
Coss
Crss
Tc= -
-25
C
25
C
75
C
VDS= --10V
--0.1
100
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
1000
7
5
10
3
2
7
5
3
2
T
c=75
C
td(off)
VDD= --50V
VGS= --10V
<10
s
10
s
100
s
1ms
10ms
100ms
DC operation
Operation in this area
is limited by RDS(on).
ID= --25A
IDP= --100A
td(on)
Drain Current, ID -- A
Forward T
ransfer
Admittance,
y
fs
-
-
S
Diode Forward Voltage, VSD -- V
Forward Drain Current, I
F
--
A
Drain Current, ID -- A
Switching
T
ime, SW
T
ime -
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source V
oltage,
V
GS
-
-
V
Drain-to-Source Voltage, VDS -- V
Drain Current, I
D
-
-
A
Tc=25
C
Single pulse
RDS(on) -- VGS
IT06589
RDS(on) -- Tc
IT06590
0
0
120
20
0
90
80
70
60
40
60
80
100
--10
--1
--2
--3
--4
--5
--6
--7
--8
--50
--25
0
25
50
75
100
125
150
--9
ID= --13A
Tc=
75
C
--25
C
25
C
50
40
30
20
10
I D=
--13A, V
GS
= --
10V
I D
= --
13A, V
GS
= --
4V
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Static Drain-to-Source
On-State Resistance, R
DS
(on) -
-
m
Case Temperature, Tc --
C
tr
2SJ657
No.7685-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.
0
0
20
40
0.5
60
1.5
1.0
80
100
120
2.0
2.5
140
160
PD -- Ta
IT06597
0
0
20
40
60
80
100
120
40
45
140
160
PD -- Tc
IT06598
35
30
25
20
15
10
5
Ambient Temperature, Ta --
C
Allowable Power Dissipation, P
D
-
-
W
Case Temperature, Tc --
C
Allowable Power Dissipation, P
D
-
-
W
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